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HK49893A - Photosensitive positive composition and photosensitive registration material prepared therefrom - Google Patents

Photosensitive positive composition and photosensitive registration material prepared therefrom

Info

Publication number
HK49893A
HK49893A HK498/93A HK49893A HK49893A HK 49893 A HK49893 A HK 49893A HK 498/93 A HK498/93 A HK 498/93A HK 49893 A HK49893 A HK 49893A HK 49893 A HK49893 A HK 49893A
Authority
HK
Hong Kong
Prior art keywords
light
sensitive
photosensitive
mixture
compound
Prior art date
Application number
HK498/93A
Other languages
German (de)
English (en)
French (fr)
Inventor
Robert E. Potvin
Jonas O. Alban
Chester J. Sobodacha
Original Assignee
Hoechst Celanese Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hoechst Celanese Corporation filed Critical Hoechst Celanese Corporation
Publication of HK49893A publication Critical patent/HK49893A/xx

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
HK498/93A 1986-05-02 1993-05-20 Photosensitive positive composition and photosensitive registration material prepared therefrom HK49893A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US06/858,631 US4732837A (en) 1986-05-02 1986-05-02 Novel mixed ester O-quinone photosensitizers

Publications (1)

Publication Number Publication Date
HK49893A true HK49893A (en) 1993-05-27

Family

ID=25328770

Family Applications (1)

Application Number Title Priority Date Filing Date
HK498/93A HK49893A (en) 1986-05-02 1993-05-20 Photosensitive positive composition and photosensitive registration material prepared therefrom

Country Status (7)

Country Link
US (2) US4732837A (xx)
EP (1) EP0243964B1 (xx)
JP (1) JPH0679161B2 (xx)
KR (1) KR950008294B1 (xx)
DE (1) DE3775607D1 (xx)
HK (1) HK49893A (xx)
SG (1) SG18693G (xx)

Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5217840A (en) * 1985-08-12 1993-06-08 Hoechst Celanese Corporation Image reversal negative working o-quinone diazide and cross-linking compound containing photoresist process with thermal curing treatment and element produced therefrom
US5256522A (en) * 1985-08-12 1993-10-26 Hoechst Celanese Corporation Image reversal negative working O-naphthoquinone diazide and cross-linking compound containing photoresist process with thermal curing
JPS62227143A (ja) * 1986-03-28 1987-10-06 Toshiba Corp 感光性組成物
US4732837A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers
US4902785A (en) * 1986-05-02 1990-02-20 Hoechst Celanese Corporation Phenolic photosensitizers containing quinone diazide and acidic halide substituents
US5162510A (en) * 1986-05-02 1992-11-10 Hoechst Celanese Corporation Process for the preparation of photosensitive compositions containing a mixed ester o-quinone photosensitizer
US4863827A (en) * 1986-10-20 1989-09-05 American Hoechst Corporation Postive working multi-level photoresist
JP2552891B2 (ja) * 1988-01-26 1996-11-13 富士写真フイルム株式会社 ポジ型フオトレジスト組成物
EP0358871B1 (en) * 1988-07-07 1998-09-30 Sumitomo Chemical Company, Limited Radiation-sensitive positive resist composition
JP2661671B2 (ja) * 1989-03-20 1997-10-08 株式会社日立製作所 パタン形成材料とそれを用いたパタン形成方法
JP2629990B2 (ja) * 1989-12-20 1997-07-16 住友化学工業株式会社 ポジ型レジスト用組成物
US5151340A (en) * 1990-07-02 1992-09-29 Ocg Microelectronic Materials, Inc. Selected photoactive methylolated cyclohexanol compounds and their use in radiation-sensitive mixtures
US5225318A (en) * 1990-07-02 1993-07-06 Ocg Microelectronic Materials, Inc. Selected photoactive methylolated cyclohexanol compounds and their use in forming positive resist image patterns
US5362599A (en) * 1991-11-14 1994-11-08 International Business Machines Corporations Fast diazoquinone positive resists comprising mixed esters of 4-sulfonate and 5-sulfonate compounds
JPH0943841A (ja) * 1995-05-25 1997-02-14 Tokyo Ohka Kogyo Co Ltd ポジ型ホトレジスト組成物およびこれを用いた多層レジスト材料
US5719003A (en) * 1995-09-27 1998-02-17 Shipley Company, L.L.C. Method for increasing the differential solubility of an imaged photoresist through hydroxy group blocking via reaction with vinyl ethers
JP3667893B2 (ja) * 1996-09-24 2005-07-06 川崎マイクロエレクトロニクス株式会社 半導体装置の製造方法
US6558787B1 (en) * 1999-12-27 2003-05-06 Kodak Polychrome Graphics Llc Relation to manufacture of masks and electronic parts
KR101632965B1 (ko) * 2008-12-29 2016-06-24 삼성디스플레이 주식회사 포토레지스트 조성물 및 박막 트랜지스터 기판의 제조 방법

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE510152A (xx) * 1949-07-23
NL166823B (nl) * 1951-02-02 Petroles Cie Francaise Electrisch koppelingsorgaan voor koppeling onder water.
DE938233C (de) * 1953-03-11 1956-01-26 Kalle & Co Ag Lichtempfindliches Material fuer die photomechanische Herstellung von Druckformen
BE594235A (xx) * 1959-08-29
US3635709A (en) * 1966-12-15 1972-01-18 Polychrome Corp Light-sensitive lithographic plate
US3647443A (en) * 1969-09-12 1972-03-07 Eastman Kodak Co Light-sensitive quinone diazide polymers and polymer compositions
US3984250A (en) * 1970-02-12 1976-10-05 Eastman Kodak Company Light-sensitive diazoketone and azide compositions and photographic elements
US3666473A (en) * 1970-10-06 1972-05-30 Ibm Positive photoresists for projection exposure
BE789196A (fr) * 1971-09-25 1973-03-22 Kalle Ag Matiere a copier photosensible
JPS5024641B2 (xx) * 1972-10-17 1975-08-18
CA1005673A (en) * 1972-12-22 1977-02-22 Constantine C. Petropoulos Positive printing plate incorporating diazoquinone
US4173470A (en) * 1977-11-09 1979-11-06 Bell Telephone Laboratories, Incorporated Novolak photoresist composition and preparation thereof
DE3009873A1 (de) * 1979-03-16 1980-09-25 Daicel Chem Photoempfindliche masse
DE3043967A1 (de) * 1980-11-21 1982-06-24 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch auf basis von o-naphthochinondiaziden und daraus hergestelltes lichtempfindliches kopiermaterial
DE3100077A1 (de) * 1981-01-03 1982-08-05 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch, das einen naphthochinondiazidsulfonsaeureester enthaelt, und verfahren zur herstellung des naphthochinondiazidsulfonsaeureesters
JPS57150944A (en) * 1981-03-13 1982-09-17 Nippon Koden Kogyo Kk Monitor and alarm apparatus for cardiac pulses
DE3127754A1 (de) * 1981-07-14 1983-02-03 Hoechst Ag, 6000 Frankfurt Lichtempfindliches gemisch auf basis von o-naphthochinondiaziden und daraus hergestelltes lichtempfindliches kopiermaterial
JPS5875149A (ja) * 1981-10-29 1983-05-06 Japan Synthetic Rubber Co Ltd ポジ型感光性樹脂組成物
DE3144480A1 (de) * 1981-11-09 1983-05-19 Hoechst Ag, 6230 Frankfurt Lichtempfindliches gemisch und daraus hergestelltes lichtempfindliches kopiermaterial
US4397937A (en) * 1982-02-10 1983-08-09 International Business Machines Corporation Positive resist compositions
US4499171A (en) * 1982-04-20 1985-02-12 Japan Synthetic Rubber Co., Ltd. Positive type photosensitive resin composition with at least two o-quinone diazides
US4526856A (en) * 1983-05-23 1985-07-02 Allied Corporation Low striation positive diazoketone resist composition with cyclic ketone(s) and aliphatic alcohol as solvents
US4564575A (en) * 1984-01-30 1986-01-14 International Business Machines Corporation Tailoring of novolak and diazoquinone positive resists by acylation of novolak
EP0155231B2 (de) * 1984-03-07 1997-01-15 Ciba-Geigy Ag Verfahren zur Herstellung von Abbildungen
US4550069A (en) * 1984-06-11 1985-10-29 American Hoechst Corporation Positive photoresist compositions with o-quinone diazide, novolak, and propylene glycol alkyl ether acetate
US4732837A (en) * 1986-05-02 1988-03-22 Hoechst Celanese Corporation Novel mixed ester O-quinone photosensitizers

Also Published As

Publication number Publication date
EP0243964A2 (de) 1987-11-04
US4892801A (en) 1990-01-09
SG18693G (en) 1993-04-16
EP0243964B1 (de) 1992-01-02
KR950008294B1 (ko) 1995-07-27
DE3775607D1 (de) 1992-02-13
JPS62284353A (ja) 1987-12-10
EP0243964A3 (en) 1988-09-14
KR870011503A (ko) 1987-12-23
JPH0679161B2 (ja) 1994-10-05
US4732837A (en) 1988-03-22

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Legal Events

Date Code Title Description
PC Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee)