HK1027174A1 - Low power voltage reference circuit. - Google Patents
Low power voltage reference circuit.Info
- Publication number
- HK1027174A1 HK1027174A1 HK00106163A HK00106163A HK1027174A1 HK 1027174 A1 HK1027174 A1 HK 1027174A1 HK 00106163 A HK00106163 A HK 00106163A HK 00106163 A HK00106163 A HK 00106163A HK 1027174 A1 HK1027174 A1 HK 1027174A1
- Authority
- HK
- Hong Kong
- Prior art keywords
- low power
- power voltage
- voltage reference
- reference circuit
- circuit
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
- G05F3/26—Current mirrors
- G05F3/262—Current mirrors using field-effect transistors only
-
- G—PHYSICS
- G05—CONTROLLING; REGULATING
- G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
- G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
- G05F3/02—Regulating voltage or current
- G05F3/08—Regulating voltage or current wherein the variable is DC
- G05F3/10—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics
- G05F3/16—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices
- G05F3/20—Regulating voltage or current wherein the variable is DC using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Nonlinear Science (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Automation & Control Theory (AREA)
- Control Of Electrical Variables (AREA)
- Semiconductor Integrated Circuits (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019990002949A KR100322527B1 (ko) | 1999-01-29 | 1999-01-29 | 밴드갭 전압기준회로 |
Publications (1)
Publication Number | Publication Date |
---|---|
HK1027174A1 true HK1027174A1 (en) | 2001-01-05 |
Family
ID=19572753
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
HK00106163A HK1027174A1 (en) | 1999-01-29 | 2000-09-28 | Low power voltage reference circuit. |
Country Status (7)
Country | Link |
---|---|
US (1) | US6160393A (xx) |
JP (1) | JP3708391B2 (xx) |
KR (1) | KR100322527B1 (xx) |
CN (1) | CN1167986C (xx) |
DE (1) | DE19958438A1 (xx) |
HK (1) | HK1027174A1 (xx) |
TW (1) | TW460765B (xx) |
Families Citing this family (33)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB9920078D0 (en) * | 1999-08-24 | 1999-10-27 | Sgs Thomson Microelectronics | Current reference circuit |
US6507238B1 (en) | 2001-06-22 | 2003-01-14 | International Business Machines Corporation | Temperature-dependent reference generator |
US6734719B2 (en) * | 2001-09-13 | 2004-05-11 | Kabushiki Kaisha Toshiba | Constant voltage generation circuit and semiconductor memory device |
DE10146849A1 (de) * | 2001-09-24 | 2003-04-10 | Atmel Germany Gmbh | Verfahren zur Erzeugung einer Ausgangsspannung |
JP4276812B2 (ja) * | 2002-03-20 | 2009-06-10 | 株式会社リコー | 温度検出回路 |
US6831504B1 (en) * | 2003-03-27 | 2004-12-14 | National Semiconductor Corporation | Constant temperature coefficient self-regulating CMOS current source |
US6956411B1 (en) | 2003-03-27 | 2005-10-18 | National Semiconductor Corporation | Constant RON switch circuit with low distortion and reduction of pedestal errors |
US6869216B1 (en) | 2003-03-27 | 2005-03-22 | National Semiconductor Corporation | Digitizing temperature measurement system |
US6750796B1 (en) | 2003-03-27 | 2004-06-15 | National Semiconductor Corporation | Low noise correlated double sampling modulation system |
US6975163B2 (en) * | 2003-11-25 | 2005-12-13 | Intersil Americas, Inc. | Precision margining circuitry |
JP4277076B2 (ja) * | 2004-03-09 | 2009-06-10 | Nsc株式会社 | パイロット信号検出回路及びその回路を搭載した半導体集積回路 |
US7075475B1 (en) | 2004-08-13 | 2006-07-11 | National Semiconductor Corporation | Correlated double sampling modulation system with reduced latency of reference to input |
US7609045B2 (en) * | 2004-12-07 | 2009-10-27 | Nxp B.V. | Reference voltage generator providing a temperature-compensated output voltage |
FR2881236B1 (fr) * | 2005-01-26 | 2007-04-06 | St Microelectronics Sa | Circuit de generation d'une tension de reference |
KR100629619B1 (ko) * | 2005-08-23 | 2006-10-02 | 삼성전자주식회사 | 기준전류 생성회로, 바이어스 전압 생성회로 및 이들을이용한 바이어스 회로 |
CN1991655B (zh) * | 2005-12-26 | 2010-10-27 | 上海贝岭股份有限公司 | 一种能隙电压源 |
CN101071312B (zh) * | 2006-05-12 | 2010-04-21 | 苏州中科集成电路设计中心有限公司 | 共源共栅电流镜偏置方法及其偏置电路 |
US7397231B2 (en) * | 2006-07-25 | 2008-07-08 | Power Integrations, Inc. | Method and apparatus for adjusting a reference |
JP4990028B2 (ja) * | 2007-05-23 | 2012-08-01 | ラピスセミコンダクタ株式会社 | 半導体集積回路装置 |
KR20100076240A (ko) * | 2008-12-26 | 2010-07-06 | 주식회사 동부하이텍 | 밴드갭 기준 전압 생성 회로 |
US20130069724A1 (en) * | 2011-09-20 | 2013-03-21 | Taiwan Semiconductor Manufacturing Co., Ltd. | Supply independent biasing circuit |
CN102789255B (zh) * | 2012-07-18 | 2014-06-25 | 天津大学 | 翻转阈值可调欠压锁存和基准电压电路 |
CN103853228A (zh) * | 2012-12-07 | 2014-06-11 | 上海华虹集成电路有限责任公司 | 基准电压产生电路 |
CN103699928B (zh) * | 2014-01-08 | 2017-01-04 | 卓捷创芯科技(深圳)有限公司 | 一种可连续调整整流信号幅度的限幅电路与无源射频标签 |
CN103926967B (zh) * | 2014-04-17 | 2015-06-10 | 重庆西南集成电路设计有限责任公司 | 低压低功耗基准电压源及低基准电压产生电路 |
CN104467810B (zh) * | 2014-12-05 | 2018-07-13 | 无锡中感微电子股份有限公司 | 一种数字整形方法和采用该方法的时钟系统 |
US9715245B2 (en) * | 2015-01-20 | 2017-07-25 | Taiwan Semiconductor Manufacturing Company Limited | Circuit for generating an output voltage and method for setting an output voltage of a low dropout regulator |
JP2016162216A (ja) * | 2015-03-02 | 2016-09-05 | エスアイアイ・セミコンダクタ株式会社 | 基準電圧回路 |
US10466731B2 (en) | 2016-01-27 | 2019-11-05 | Taiwan Semiconductor Manufacturing Co., Ltd. | Two-transistor bandgap reference circuit and FinFET device suited for same |
US9851740B2 (en) * | 2016-04-08 | 2017-12-26 | Qualcomm Incorporated | Systems and methods to provide reference voltage or current |
US10285590B2 (en) | 2016-06-14 | 2019-05-14 | The Regents Of The University Of Michigan | Intraocular pressure sensor with improved voltage reference circuit |
US10310537B2 (en) | 2016-06-14 | 2019-06-04 | The Regents Of The University Of Michigan | Variation-tolerant voltage reference |
US11353903B1 (en) * | 2021-03-31 | 2022-06-07 | Silicon Laboratories Inc. | Voltage reference circuit |
Family Cites Families (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH082010B2 (ja) * | 1990-05-10 | 1996-01-10 | 株式会社東芝 | 電流伝達回路 |
JP2715642B2 (ja) * | 1990-08-22 | 1998-02-18 | 日本電気株式会社 | 半導体集積回路 |
BE1008031A3 (nl) * | 1994-01-20 | 1995-12-12 | Philips Electronics Nv | Storingsongevoelige inrichting voor opwekken van instelstromen. |
JP3347896B2 (ja) * | 1994-10-21 | 2002-11-20 | 日本オプネクスト株式会社 | 定電圧源回路 |
FR2732129B1 (fr) * | 1995-03-22 | 1997-06-20 | Suisse Electronique Microtech | Generateur de courant de reference en technologie cmos |
KR100219036B1 (ko) * | 1996-09-30 | 1999-09-01 | 이계철 | 저전압형 모스펫 콘트롤링 곱셈기 |
-
1999
- 1999-01-29 KR KR1019990002949A patent/KR100322527B1/ko not_active IP Right Cessation
- 1999-10-14 US US09/418,333 patent/US6160393A/en not_active Expired - Fee Related
- 1999-11-22 TW TW088120360A patent/TW460765B/zh active
- 1999-12-03 DE DE19958438A patent/DE19958438A1/de not_active Withdrawn
- 1999-12-09 CN CNB991247736A patent/CN1167986C/zh not_active Expired - Fee Related
-
2000
- 2000-01-25 JP JP2000015538A patent/JP3708391B2/ja not_active Expired - Fee Related
- 2000-09-28 HK HK00106163A patent/HK1027174A1/xx not_active IP Right Cessation
Also Published As
Publication number | Publication date |
---|---|
CN1264067A (zh) | 2000-08-23 |
TW460765B (en) | 2001-10-21 |
DE19958438A1 (de) | 2000-08-03 |
KR100322527B1 (ko) | 2002-03-18 |
KR20000052096A (ko) | 2000-08-16 |
CN1167986C (zh) | 2004-09-22 |
JP2000222054A (ja) | 2000-08-11 |
US6160393A (en) | 2000-12-12 |
JP3708391B2 (ja) | 2005-10-19 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PC | Patent ceased (i.e. patent has lapsed due to the failure to pay the renewal fee) |
Effective date: 20101209 |