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GB990119A - A method of and apparatus for producing a single crystal of semiconductor material with a p-n function - Google Patents

A method of and apparatus for producing a single crystal of semiconductor material with a p-n function

Info

Publication number
GB990119A
GB990119A GB4198361A GB4198361A GB990119A GB 990119 A GB990119 A GB 990119A GB 4198361 A GB4198361 A GB 4198361A GB 4198361 A GB4198361 A GB 4198361A GB 990119 A GB990119 A GB 990119A
Authority
GB
United Kingdom
Prior art keywords
rod
silicon
growth plane
substrate
single crystal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4198361A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Merck and Co Inc
Original Assignee
Merck and Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Merck and Co Inc filed Critical Merck and Co Inc
Publication of GB990119A publication Critical patent/GB990119A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02524—Group 14 semiconducting materials
    • H01L21/02532—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/0257—Doping during depositing
    • H01L21/02573—Conductivity type
    • H01L21/02576—N-type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

990,119. Semi-conductors. MERCK & CO. Inc. Nov. 23, 1961 [Nov. 29, 1960], No. 41983/61. Heading H1K. A semi-conductor body comprising a single mono-crystalline structure is made by the epitaxial deposition of semi-conductor material containing active impurities on to asubstrate of the material having a surface which conforms to within half a degree to a crystal growth plane. The substrate is cut from a zone refined single crystal to expose a large area growth plane. With silicon the (211) growth plane may be located in a (111) oriented zone refined rod by etching a characteristic vibration line on the rod with KOH and using the etched line to reflect a light beam back along its path. The rod may then be cut perpendicularly to the light beam and along the length of the rod to expose the (211) growth plane. A (111) growth plane may be similarly exposed in a (211) oriented rod. The exposed surface of the rod is lapped with 600 mesh alundum powder, is etched in a solution of nitric and hydrofluoric acids and is washed and dried. A single crystal 0À006 inch thick silicon layer forming an extension of the single crystal substrate lattice may be deposited on the (211) growth plane of an N- type silicon substrate by heating the substrate to between 1150‹ C. and 1250‹ C. and exposing the growth plane to a gas flow of 240 gms./hour silico-chloroform entrained in 330 litres/hour of hydrogen containing sufficient boron trichloride to provide 10<SP>18</SP> carriers/c.c. of silicon. Deposition is allowed to take place for 30 minutes. A reaction chamber in which deposition can be achieved is shown in Fig. 1 where the single crystal substrate 2, with exposed (211) growth planes 2<SP>1</SP>, is mounted between electrodes 3 so that the substrate may be heated by current from a source 4. The silicon, impurity, and diluent atoms are admitted turbulently through a port 7 from a manifold system 6 and unreacted gases and decomposition products are taken away through an exhaust port 8. Apart from silicon it is said that germanium, silicon carbide, gallium arsenide, and gallium phosphide may be used.
GB4198361A 1960-11-29 1961-11-23 A method of and apparatus for producing a single crystal of semiconductor material with a p-n function Expired GB990119A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US7234460A 1960-11-29 1960-11-29

Publications (1)

Publication Number Publication Date
GB990119A true GB990119A (en) 1965-04-28

Family

ID=22106995

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4198361A Expired GB990119A (en) 1960-11-29 1961-11-23 A method of and apparatus for producing a single crystal of semiconductor material with a p-n function

Country Status (7)

Country Link
AT (1) AT243317B (en)
BE (1) BE610469A (en)
CH (1) CH397875A (en)
DE (1) DE1419716B2 (en)
ES (1) ES272455A1 (en)
GB (1) GB990119A (en)
SE (1) SE305201B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7772097B2 (en) 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN112626615A (en) * 2020-12-09 2021-04-09 黄梦蕾 Silicon epitaxial growth diffusion auxiliary equipment for semiconductor discrete device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7772097B2 (en) 2007-11-05 2010-08-10 Asm America, Inc. Methods of selectively depositing silicon-containing films

Also Published As

Publication number Publication date
AT243317B (en) 1965-11-10
DE1419716A1 (en) 1968-10-10
CH397875A (en) 1965-08-31
BE610469A (en) 1962-05-17
SE305201B (en) 1968-10-21
ES272455A1 (en) 1962-03-01
DE1419716B2 (en) 1971-12-16

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