CH397875A - Process for manufacturing a single crystal semiconductor body, apparatus for carrying out said process and product resulting from said process - Google Patents
Process for manufacturing a single crystal semiconductor body, apparatus for carrying out said process and product resulting from said processInfo
- Publication number
- CH397875A CH397875A CH1389561A CH1389561A CH397875A CH 397875 A CH397875 A CH 397875A CH 1389561 A CH1389561 A CH 1389561A CH 1389561 A CH1389561 A CH 1389561A CH 397875 A CH397875 A CH 397875A
- Authority
- CH
- Switzerland
- Prior art keywords
- carrying
- manufacturing
- single crystal
- semiconductor body
- crystal semiconductor
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02373—Group 14 semiconducting materials
- H01L21/02381—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/02433—Crystal orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02524—Group 14 semiconducting materials
- H01L21/02532—Silicon, silicon germanium, germanium
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02538—Group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/0257—Doping during depositing
- H01L21/02573—Conductivity type
- H01L21/02576—N-type
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Recrystallisation Techniques (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US7234460A | 1960-11-29 | 1960-11-29 |
Publications (1)
Publication Number | Publication Date |
---|---|
CH397875A true CH397875A (en) | 1965-08-31 |
Family
ID=22106995
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CH1389561A CH397875A (en) | 1960-11-29 | 1961-11-29 | Process for manufacturing a single crystal semiconductor body, apparatus for carrying out said process and product resulting from said process |
Country Status (7)
Country | Link |
---|---|
AT (1) | AT243317B (en) |
BE (1) | BE610469A (en) |
CH (1) | CH397875A (en) |
DE (1) | DE1419716B2 (en) |
ES (1) | ES272455A1 (en) |
GB (1) | GB990119A (en) |
SE (1) | SE305201B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7772097B2 (en) | 2007-11-05 | 2010-08-10 | Asm America, Inc. | Methods of selectively depositing silicon-containing films |
CN112626615A (en) * | 2020-12-09 | 2021-04-09 | 黄梦蕾 | Silicon epitaxial growth diffusion auxiliary equipment for semiconductor discrete device |
-
1961
- 1961-11-14 DE DE19611419716 patent/DE1419716B2/en active Pending
- 1961-11-14 ES ES272455A patent/ES272455A1/en not_active Expired
- 1961-11-17 BE BE610469A patent/BE610469A/en unknown
- 1961-11-18 AT AT871161A patent/AT243317B/en active
- 1961-11-23 GB GB4198361A patent/GB990119A/en not_active Expired
- 1961-11-28 SE SE1184661A patent/SE305201B/xx unknown
- 1961-11-29 CH CH1389561A patent/CH397875A/en unknown
Also Published As
Publication number | Publication date |
---|---|
AT243317B (en) | 1965-11-10 |
DE1419716A1 (en) | 1968-10-10 |
GB990119A (en) | 1965-04-28 |
BE610469A (en) | 1962-05-17 |
SE305201B (en) | 1968-10-21 |
ES272455A1 (en) | 1962-03-01 |
DE1419716B2 (en) | 1971-12-16 |
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