GB9701921D0 - Method of fabricating a semiconductor memory device having a tree-type capacitor - Google Patents
Method of fabricating a semiconductor memory device having a tree-type capacitorInfo
- Publication number
- GB9701921D0 GB9701921D0 GBGB9701921.0A GB9701921A GB9701921D0 GB 9701921 D0 GB9701921 D0 GB 9701921D0 GB 9701921 A GB9701921 A GB 9701921A GB 9701921 D0 GB9701921 D0 GB 9701921D0
- Authority
- GB
- United Kingdom
- Prior art keywords
- fabricating
- tree
- memory device
- semiconductor memory
- type capacitor
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
- H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
- H10B12/318—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor the storage electrode having multiple segments
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B12/00—Dynamic random access memory [DRAM] devices
- H10B12/01—Manufacture or treatment
- H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
- H10B12/03—Making the capacitor or connections thereto
- H10B12/033—Making the capacitor or connections thereto the capacitor extending over the transistor
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
- Semiconductor Memories (AREA)
Priority Applications (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP09005087A JP3024676B2 (en) | 1996-08-16 | 1997-01-14 | Method of manufacturing semiconductor memory device having tree-type capacitor |
| GB9701921A GB2321769A (en) | 1996-08-16 | 1997-01-30 | Method of fabricating a stacked capacitor |
| FR9705112A FR2752481B1 (en) | 1996-08-16 | 1997-04-25 | METHOD FOR MANUFACTURING A SEMICONDUCTOR MEMORY DEVICE HAVING A SHAFT TYPE CAPACITOR |
| DE19720219A DE19720219A1 (en) | 1996-08-16 | 1997-05-14 | Semiconductor memory device manufacturing method with capacitor |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| TW085110004A TW312831B (en) | 1996-08-16 | 1996-08-16 | Manufacturing method of semiconductor memory device with capacitor(3) |
| GB9701921A GB2321769A (en) | 1996-08-16 | 1997-01-30 | Method of fabricating a stacked capacitor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB9701921D0 true GB9701921D0 (en) | 1997-03-19 |
| GB2321769A GB2321769A (en) | 1998-08-05 |
Family
ID=26310893
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9701921A Withdrawn GB2321769A (en) | 1996-08-16 | 1997-01-30 | Method of fabricating a stacked capacitor |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP3024676B2 (en) |
| DE (1) | DE19720219A1 (en) |
| FR (1) | FR2752481B1 (en) |
| GB (1) | GB2321769A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US7829410B2 (en) | 2007-11-26 | 2010-11-09 | Micron Technology, Inc. | Methods of forming capacitors, and methods of forming DRAM arrays |
Family Cites Families (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0321062A (en) * | 1989-06-19 | 1991-01-29 | Toshiba Corp | Semiconductor storage device |
| JPH0379072A (en) * | 1989-08-22 | 1991-04-04 | Toshiba Corp | Semiconductor memory device and manufacturing method |
| JPH05190508A (en) * | 1992-01-14 | 1993-07-30 | Matsushita Electric Ind Co Ltd | Thin film etching method and laminated thin film etching method |
| US5150276A (en) * | 1992-01-24 | 1992-09-22 | Micron Technology, Inc. | Method of fabricating a vertical parallel cell capacitor having a storage node capacitor plate comprising a center fin effecting electrical communication between itself and parallel annular rings |
| JP2953220B2 (en) * | 1992-10-30 | 1999-09-27 | 日本電気株式会社 | Method for manufacturing semiconductor device |
| US5451537A (en) * | 1994-08-12 | 1995-09-19 | Industrial Technology Research Institute | Method of forming a DRAM stack capacitor with ladder storage node |
| JPH08204153A (en) * | 1995-01-24 | 1996-08-09 | Sony Corp | Manufacture of semiconductor storage device |
| US5536673A (en) * | 1995-07-26 | 1996-07-16 | United Microelectronics Corporation | Method for making dynamic random access memory (DRAM) cells having large capacitor electrode plates for increased capacitance |
-
1997
- 1997-01-14 JP JP09005087A patent/JP3024676B2/en not_active Expired - Lifetime
- 1997-01-30 GB GB9701921A patent/GB2321769A/en not_active Withdrawn
- 1997-04-25 FR FR9705112A patent/FR2752481B1/en not_active Expired - Fee Related
- 1997-05-14 DE DE19720219A patent/DE19720219A1/en not_active Ceased
Also Published As
| Publication number | Publication date |
|---|---|
| FR2752481A1 (en) | 1998-02-20 |
| DE19720219A1 (en) | 1998-02-19 |
| JPH1079486A (en) | 1998-03-24 |
| GB2321769A (en) | 1998-08-05 |
| FR2752481B1 (en) | 1999-12-31 |
| JP3024676B2 (en) | 2000-03-21 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |