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GB9517297D0 - Semiconductor device - Google Patents

Semiconductor device

Info

Publication number
GB9517297D0
GB9517297D0 GBGB9517297.9A GB9517297A GB9517297D0 GB 9517297 D0 GB9517297 D0 GB 9517297D0 GB 9517297 A GB9517297 A GB 9517297A GB 9517297 D0 GB9517297 D0 GB 9517297D0
Authority
GB
United Kingdom
Prior art keywords
semiconductor device
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GBGB9517297.9A
Other versions
GB2304993A (en
GB2304993B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Europe Ltd
Original Assignee
Toshiba Cambridge Research Centre Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Toshiba Cambridge Research Centre Ltd filed Critical Toshiba Cambridge Research Centre Ltd
Priority to GB9517297A priority Critical patent/GB2304993B/en
Publication of GB9517297D0 publication Critical patent/GB9517297D0/en
Priority to GB9617283A priority patent/GB2305003B/en
Priority to JP8222796A priority patent/JPH09167876A/en
Publication of GB2304993A publication Critical patent/GB2304993A/en
Application granted granted Critical
Publication of GB2304993B publication Critical patent/GB2304993B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/832—Electrodes characterised by their material
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D8/00—Diodes
    • H10D8/01—Manufacture or treatment
    • H10D8/053—Manufacture or treatment of heterojunction diodes or of tunnel diodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/81—Bodies
    • H10H20/822—Materials of the light-emitting regions
    • H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/83—Electrodes
    • H10H20/831—Electrodes characterised by their shape

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Electrodes Of Semiconductors (AREA)
GB9517297A 1995-08-23 1995-08-23 Semiconductor device Expired - Lifetime GB2304993B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB9517297A GB2304993B (en) 1995-08-23 1995-08-23 Semiconductor device
GB9617283A GB2305003B (en) 1995-08-23 1996-08-16 Semiconductor contact layer structure
JP8222796A JPH09167876A (en) 1995-08-23 1996-08-23 Semiconductor laser device, manufacturing method thereof, semiconductor device and manufacturing method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB9517297A GB2304993B (en) 1995-08-23 1995-08-23 Semiconductor device

Publications (3)

Publication Number Publication Date
GB9517297D0 true GB9517297D0 (en) 1995-10-25
GB2304993A GB2304993A (en) 1997-03-26
GB2304993B GB2304993B (en) 1997-08-06

Family

ID=10779667

Family Applications (2)

Application Number Title Priority Date Filing Date
GB9517297A Expired - Lifetime GB2304993B (en) 1995-08-23 1995-08-23 Semiconductor device
GB9617283A Expired - Fee Related GB2305003B (en) 1995-08-23 1996-08-16 Semiconductor contact layer structure

Family Applications After (1)

Application Number Title Priority Date Filing Date
GB9617283A Expired - Fee Related GB2305003B (en) 1995-08-23 1996-08-16 Semiconductor contact layer structure

Country Status (2)

Country Link
JP (1) JPH09167876A (en)
GB (2) GB2304993B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6243407B1 (en) 1997-03-21 2001-06-05 Novalux, Inc. High power laser devices
CN111244188B (en) * 2020-01-19 2022-04-01 中国科学院上海微系统与信息技术研究所 Heterojunction AlGaAs/GaAs diode and preparation method thereof

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4012756A (en) * 1969-12-30 1977-03-15 International Business Machines Corporation Method of inhibiting hillock formation in films and film thereby and multilayer structure therewith
US4048646A (en) * 1975-02-26 1977-09-13 Nippon Electric Company, Limited Dual-gate schottky barrier gate fet having an intermediate electrode and a method of making same
US4165515A (en) * 1977-12-28 1979-08-21 Bell Telephone Laboratories, Incorporated Light emitting tunnel junctions which are stable at room temperature
DE3424085A1 (en) * 1983-06-29 1985-01-17 Citizen Watch Co., Ltd., Tokio/Tokyo METHOD FOR THE PRODUCTION OF HIGHLY MINIMIZED THICK FILM DIODES
JPH03502747A (en) * 1988-01-06 1991-06-20 テルストラ　コーポレイション　リミテッド current injection laser
US4943970A (en) * 1988-10-24 1990-07-24 General Dynamics Corporation, Electronics Division Surface emitting laser
US4901327A (en) * 1988-10-24 1990-02-13 General Dynamics Corporation, Electronics Division Transverse injection surface emitting laser
US4949350A (en) * 1989-07-17 1990-08-14 Bell Communications Research, Inc. Surface emitting semiconductor laser
US5018157A (en) * 1990-01-30 1991-05-21 At&T Bell Laboratories Vertical cavity semiconductor lasers
US5068868A (en) * 1990-05-21 1991-11-26 At&T Bell Laboratories Vertical cavity surface emitting lasers with electrically conducting mirrors
US5212703A (en) * 1992-02-18 1993-05-18 Eastman Kodak Company Surface emitting lasers with low resistance bragg reflectors
US5388120A (en) * 1993-09-21 1995-02-07 Motorola, Inc. VCSEL with unstable resonator

Also Published As

Publication number Publication date
JPH09167876A (en) 1997-06-24
GB9617283D0 (en) 1996-09-25
GB2305003A (en) 1997-03-26
GB2304993A (en) 1997-03-26
GB2305003B (en) 1997-10-08
GB2304993B (en) 1997-08-06

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Legal Events

Date Code Title Description
PE20 Patent expired after termination of 20 years

Expiry date: 20150822