GB2304993A - Semiconductor laser device - Google Patents
Semiconductor laser device Download PDFInfo
- Publication number
- GB2304993A GB2304993A GB9517297A GB9517297A GB2304993A GB 2304993 A GB2304993 A GB 2304993A GB 9517297 A GB9517297 A GB 9517297A GB 9517297 A GB9517297 A GB 9517297A GB 2304993 A GB2304993 A GB 2304993A
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- Prior art keywords
- injection region
- region
- forming
- layer
- mirror
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 33
- 238000002347 injection Methods 0.000 claims abstract description 121
- 239000007924 injection Substances 0.000 claims abstract description 121
- 238000000034 method Methods 0.000 claims description 23
- 238000005530 etching Methods 0.000 claims description 12
- 238000010884 ion-beam technique Methods 0.000 claims description 11
- 238000004519 manufacturing process Methods 0.000 claims description 5
- 230000001419 dependent effect Effects 0.000 claims 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 16
- 230000015572 biosynthetic process Effects 0.000 description 4
- 238000005253 cladding Methods 0.000 description 3
- 238000000926 separation method Methods 0.000 description 3
- 230000008901 benefit Effects 0.000 description 2
- 238000010276 construction Methods 0.000 description 2
- 229910000980 Aluminium gallium arsenide Inorganic materials 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 239000002019 doping agent Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000011066 ex-situ storage Methods 0.000 description 1
- 238000002513 implantation Methods 0.000 description 1
- 238000011065 in-situ storage Methods 0.000 description 1
- 230000000873 masking effect Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 239000013307 optical fiber Substances 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 125000006850 spacer group Chemical group 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/832—Electrodes characterised by their material
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D8/00—Diodes
- H10D8/01—Manufacture or treatment
- H10D8/053—Manufacture or treatment of heterojunction diodes or of tunnel diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
- H01S5/042—Electrical excitation ; Circuits therefor
- H01S5/0421—Electrical excitation ; Circuits therefor characterised by the semiconducting contacting layers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
- H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
- H10D62/85—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group III-V materials, e.g. GaAs
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/822—Materials of the light-emitting regions
- H10H20/824—Materials of the light-emitting regions comprising only Group III-V materials, e.g. GaP
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/83—Electrodes
- H10H20/831—Electrodes characterised by their shape
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Nanotechnology (AREA)
- Physics & Mathematics (AREA)
- Mathematical Physics (AREA)
- Theoretical Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Semiconductor Lasers (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
The semiconductor laser device 31 comprises a lower injection region 35 situated above a lower mirror 33. A laser structure 39 including an active layer 41 is formed overlying the lower injection region 35. An upper injection region 47 is formed above the laser structure 39 such that the upper injection region 47 only overlies the lower injection region 35 in a predetermined conduction region of the device 31. An upper mirror 49 is formed above the laser structure. The injection regions are elongate and are transverse to each other so that the conduction region is defined by their area of overlap below the upper mirror.
Description
SEMICONDUCTOR LASER DEVICE
The present invention relates to a semiconductor laser device and more especially to a vertical cavity surface emitting laser (VCSEL). A
VCSEL is a laser wherein resonance occurs between opposing mirror surfaces respectively arranged above and below the active layer rather than along a waveguide layer parallel thereto and emission occurs perpendicular to the active layer.
In principle, VCSELs offer a number of advantages, for example a small emission cone angle enabling better coupling to an optical fibre and low threshold currents. However, this kind of structure has an inherent problem in that the electrical current used to energise the device would normally have to pass through the dielectric stacks forming the rnirrors.
The resistance of such a device would be relatively high even if the dielectric stack interfaces were graded, thus restricting the potential bandwidth of the device. Also the doped dielectric stack results in higher optical losses.
To overcome the aforementioned problem, an alternative structure utilising lateral current injection has been proposed according J.W. Scott et al, IEEE J. Quantum. Electron, 29 (5) pp 1295-1308, May 1993. With this structure, the injection (i.e. contact) layers are arranged outside the cavity region. Current is confined to the cavity region by an undercut in one of the cladding layers. However, this creates other problems.
First, with the structure of Scott et al, the path between the peripheral injection layers channelling around the undercut results in a relatively high current density. Second, the undercut is formed by selective etching which may cause lattice dislocations which result in dark lines. Third, the precision of undercut formation in whole wafer processing is likely to be difficult to control resulting in relatively poor yields.
The drawbacks associated with the undercut can be avoided by using the kind of VCSEL structure described in GB-A-2 283 612. This utilises separation layers formed above a first injection layer which is situated above a first dielectric mirror. A via is etched down to expose part of the first injection layer and to leave an oblique facet on the separation layers. A layer structure, i.e. active layer and cladding layers, covered with a second injection layer are formed by regrowth over the patterned wafer. Then, a second dielectric mirror is formed over the bottom of the via, directly above the previously exposed part of the first injection layer.
A further advance has now been made, based on a patterned waferlregrowth technique, which offers the possibility of greater miniaturisation with good control of boundary definition of the conduction region with which lasing occurs. It therefore enables ultra-low threshold currents to be realised, as well as lower resistance in the differential IV characteristic.
Thus, the present invention provides a semiconductor laser device comprising a lower injection region situated above a lower mirror, a laser structure including an active layer and formed overlying the lower injection region, an upper injection region above the laser structure such that the upper injection region only overlies the lower injection region in a predetermined conduction region of the device, and an upper mirror above the laser structure.
Normally the basic laser structure itself will comprise the active layer bounded by respective upper and lower cladding layers. However, more than one active layer may be present and in fact, any basic structure already known in semiconductor laser technology may be used. Of course though, as the laser device of the present invention is a VCSEL, no waveguide layer is required.
In preferred embodiments of the device described herein below, the lower injection region is generally elongate and is conveniently formed as part of a mesa, i.e. on or in a mesa region formed by selective etching of a structure containing at least one doped layer. However, it could equally be constituted by a doped region of a complete layer formed above a lower mirror.
For example, the lower injection region would be formed by forming a lower injection layer (doped) and selectively etching it to form the mesa.
This could be left as a mesa or the upper surface thereof could be made flat by formation of another layer on top of the mesa and etching it down uniformly to expose the top of the mesa again. However, formation of the laser structure by regrowth directly over a mesa has the advantage of resulting in a structure which minimises lateral injection.
The lower injection region could also be formed by formation of a doped region within a complete semiconductor layer formed above the lower mirror. This could be effected by forming the semiconductor layer as a non-doped or lightly doped layer and selectively doping it over a predetermined area using ion beam doping and dopant activation annealing to define the lower conduction region. The semiconductor layer formed over the lower mirror could instead be formed as a doped layer and by selectively subjecting it to damage with an incident ion beam, then only a predetermined area for functioning as the lower injection region would remain as an undamaged doped region. Both these techniques may either be carried out ex-situ using conventional ion masking and an ion beam implanter or in-situ using a focused ion beam implanter.
To define a narrow predetermined conduction region through the device, it is convenient to make both the lower and upper injection regions generally elongate so that they extend in respective direction mutually transverse to one another, for example substantially at right angles to each other when seen in plan view. The upper mirror can then be formed substantially only above the predetermined conduction region.
In a second aspect, the present invention also extends to a method of fabricating a semiconductor laser device, the method comprising the steps of:
(i) forming a lower injection region above a lower mirror;
(ii) forming a laser structure including an active layer, overlying the lower injection region;
(iii) forming an upper injection region above the laser structure so that the upper injection region only overlies the lower injection region in a predetermined conduction region of the device; and
(iv) forming an upper mirror above the upper injection region.
In this method, the manner of forming the lower injection region is as indicated above. However, exactly the same range of techniques could be used to form the upper injection region such that the overlap of upper and lower injection regions occurs over a narrowly defined area constituting the conduction region of the device.
The present invention will now be explained in more detail by reference to the following non-limiting preferred embodiments and with reference to the accompanying drawings, in which:
Figure 1 shows a cross-section of a first embodiment of a semiconductor laser device according to the present invention;
Figure 2 shows a plan view of the device of the first embodiment;
Figure 3 shows a cross-section of a second embodiment of a semiconductor laser device according to the present invention;
Figure 4 shows a plan view of the second embodiment;
FigureS shows a cross-section of a third embodiment of a semiconductor device according to the present invention; and
Figure 6 shows a plan view of the third embodiment.
First, referring to Figure 1, there is shown a VCSEL device 1 which comprises a first dielectric stack constituting a lower mirror 3. On this mirror is formed an n-GaAs lower injection region S which is elongate and extends into the plane of the paper. This is better seen in the plan view of
Figure 2. The lower injection region 5 is formed by causing ion beam damage to adjacent areas 7, 9 of an n-doped layer 11 formed above the lower mirror 3. The mirror consists of alternating layers 13, 15 etc. of alternating different dielectric constant, in this case GaAs/AlAs.
Above the lower injection region 5 is formed a laser structure 17 consisting of a triple In0.2 Gao 8 As/GaAs emission region 19 sandwiched between respective lower and upper graded AlGaAs spacing layers 21, 23.
Above the laser structure 17 is formed an upper p-GaAs injector region 25 which is elongate from left to right as shown in Figure 1 and as seen better in the plan view of Figure 2. This may be formed in the same way as the lower injection region 5, by causing ion beam damage to adjacent areas of a p-GaAs layer, or by etching the p-GaAs.
It will be appreciated from Figure 2 that the conduction region of the device, between the injection regions 5, 25 is defined only by their area of overlap and above this area, an upper mirror 27 is formed of the same structure as the lower mirror 3, but with fewer periods that the beam can exit through this mirror. For substrate emission, more mirror periods are grown/deposited on the top than below the device.
A second embodiment of a semiconductor laser device 31, according to the present invention is shown in Figures 3 and 4. This device is analogous to that of the first embodiment. Above a lower mirror 33 of identical construction to the lower mirror 3 of the first embodiment, is formed a lower injection region 35 consisting of a mesa 37 formed from selective etching of a n-GaAs layer. This is elongate in the direction extending into the plane of the paper, as better seen in the plan view of
Figure 4.
A laser structure 39 consisting of an Ino 2Gao gAs/GaAs emission region 41 sandwiched between respective graded Al GaAs lower and upper spacer layers 43, 45 is formed by regrowth over the mesa.
A p-GaAs upper injection region 47 is formed on top of the laser structure 39 and is elongate from left to right in the diagram, as better seen from Figure 4.
Again, a conduction region through the device (emission region) is defined by the layers of the device sandwiched between the overlap region of the lower injection region 35 and upper injection region 47. An upper mirror 49, of identical structure to upper mirror 27 of the first embodiment, is formed above the conduction region. Injection between the n-GaAs mesa side wall and the p-GaAs may be minimised by a number of techniques.
If the mesa side wall 51 is the (X1 1) B plane, then during the regrowth process, growth will be faster on the side wall (approx. 1.2 for (31 1)B planes as compared with the (100) plane). Then, separation between the p-GaAs upper injection region 47 and the n-GaAs lower injection region 35 will be larger on this facet 51 than on the mesa top.
Thus at any give bias, the current density on the side wall will be less than on the mesa top.
If the side wall is the (X11) A plane and the doping order is reversed, then control of the Si doping on this facet may be obtained by controlling the As pressure during growth. By modulating this pressure during growth of the upper injection region 47, the mesa side wall doping profile can be made to be pnpn, and on the (100) regions, just n. In this way, the upper injection region 47 is isolated from the lower injection region 35 in the facet region. The side wall current may also be minimised by a vertical steep mesa etch thus reducing the overlap area.
A third embodiment of a semiconductor laser device 51 according to the present invention is shown in Figures 5 and 6. This device is also analogous to that of the first embodiment. Above a lower mirror 53 of identical construction to the lower mirror 3 of the first embodiment is formed on n-GaAs lower injection region 55 which is elongate, extending into the plane of the paper (see Figure 6). The lower injection region 55 is formed as an n-doped region by selective ion beam implantation in a GaAs layer 57 above the lower mirror 53.
Above the lower injection region 55 is formed a laser structure 57 identical to the laser structure 17 of the first embodiment. Above the laser structure 57 is formed an upper injection region 59 and then upper mirror 61. These are identical respectively, to upper injection region 25 and upper mirror 27 of the first embodiment.
In the light of this description of preferred embodiments, modifications of same, as well as other embodiments, all within the scope of the present invention as defined by the appended claims, will now be apparent to persons skilled in the art.
Claims (16)
1. A semiconductor laser device comprising a lower injection region situated above a lower mirror, a laser structure including an active layer and formed overlying the lower injection region, an upper injection region above the laser structure such that the upper injection region only overlies the lower injection region in a predetermined conduction region of the device, and an upper mirror above the laser structure.
2. A device according to claim 1, wherein the lower and upper injection regions are generally elongate.
3. A device according to claim 1 or claim 2, wherein the lower injection region is formed in or on a mesa.
4. A device according to claim 1 or claim 2, wherein the lower injection region is a doped region of a semiconductor layer formed above the lower mirror.
5. A device according to claim 2 or else claim 3 or claim 5 when dependent upon claim 2, wherein the lower conduction region extends in a first direction and the upper injection region extends in a second direction transverse to the first direction.
6. A device according to claim 5, wherein the second direction is substantially at right angles relative to the first direction.
7. A device according to any preceding claim, wherein the upper mirror is formed substantially only above the predetermined conduction region.
8. A method of fabricating a semiconductor laser device, the method comprising the steps of:
(i) forming a lower injection region above a lower mirror; (ii) forming a laser structure including an active layer, overlying the lower injection region;
(iii) forming an upper injection region above the laser structure so that the upper injection region only overlies the lower injection region in a predetermined conduction region of the device; and
(iv) forming an upper mirror above the upper injection region.
9. A device according to claim 8, wherein the lower injection region is formed by forming a lower injection layer above the lower mirror and selectively etching to form a mesa which contains said lower injection region.
10. A device according to claim 8, wherein the lower injection region is formed by forming a doped region of a semiconductor layer formed above the lower mirror.
11. A method according to claim 10, wherein the lower injection region is formed by forming the semiconductor layer as a doped layer and selectively subjecting it to damage with an ion beam to leave a predetermined area as the said lower injection region.
12. A method according to claim 10, wherein the lower injection region is formed by forming the semiconductor layer as a doped layer and selectively etching it to leave the said lower injection region over a predetermined area.
13. A method according to claim 10, wherein the lower injection region is formed by forming the semiconductor layer as an undoped or lightly doped layer and selectively doping it over a predetermined area to define the said lower conduction region.
14. A method according to any of claims 8 - 13, wherein the upper injection region is formed by forming a doped upper injection layer and selectively subjecting it to damage with an ion beam to leave a predetermined area as the said upper injection region.
15. A method according to any of claims 8 - 13, wherein the upper injection region is formed by forming a doped upper injection layer and selectively etching it to leave the said upper injection region over a predetermined area.
16. A method of fabricating a semiconductor laser device, the method being substantially as hereinbefore described with reference to any of the accompanying drawings.
16. A method according to any of claims 8 - 13, wherein the upper injection region is formed by forming an undoped or lightly doped upper injection layer and selectively doping it over a predetermined area to define the said upper conduction region.
17. A semiconductor laser device substantially as hereinbefore described with reference to any of the accompanying drawings.
18. A method of fabricating a semiconductor laser device, the method being substantially as hereinbefore described with reference to any of the accompanying drawings.
Amendments to the claims have been filed as follows
Claims:
1. A semiconductor device comprising a lower injection region situated above a lower mirror, a laser structure including an active layer and formed overlying the lower injection region, an upper injection region above the laser structure such that the upper injection region only overlies the lower injection region in a predetermined conduction region of the device and an upper mirror above the laser structure wherein the said upper and lower injection regions are generally elongate, and the lower injection region extends in a first direction and the upper injection region extends in a second direction transverse to the first direction.
2. A device according to claim 1 wherein the lower injection region is formed in or on a mesa.
3. A device according to claim 1 wherein the lower injection region is a doped region of a semiconductor layer formed above the lower mirror.
4. A device according to any preceding claim, wherein the second direction is substantially a right angle to the first direction.
5. A device according to an preceding claim, wherein the upper mirror is formed substantially only above the predetermined conduction region.
6. A method of fabricating a semiconductor laser device, the method comprising the steps of :
(i) forming a generally elongate lower injection region above the lower mirror, so that the lower injection region extends in a first direction;
(ii) forming a laser structure including an active layer, overlying the lower injection region;
(iii) forming a generally elongate upper injection region above the laser structure which extends in a second direction transverse to the lower injection region so that the upper injection region only overlies the lower injection region in a predetermined area of the device; and
(iv) forming an upper mirror above the upper injection region.
7. A device according to claim 6, wherein the lower injection region is formed by forming a lower injection layer above the lower mirror and selectively etching to form a mesa which contains said lower injection region.
8. A device according to claim 6, wherein the lower injection region is formed by forming a doped region of a semiconductor layer formed above the lower mirror.
9. A method according to claim 8, wherein the lower injection region is formed by forming the semiconductor layer as a doped layer and selectively subjecting it to damage with an ion beam to leave a predetermined area as the said lower injection region.
10. A method according to claim 8, wherein the lower injection region is formed by forming the semiconductor layer as a doped layer and selectively etching it to leave the said lower injection region over a predetermined area.
11. A method according to claim 8, wherein the lower injection region is formed by forming the semiconductor layer as an undoped or lightly doped layer and selectively doping it over a predetermined area to define the said lower conduction region.
12. A method according to any of claims 6-11, wherein the upper injection region is formed by forming a doped upper injection layer and selectively subjecting it to damage with an ion beam to leave a predetermined area as the said upper injection region.
13. A method according to any of claims 6-11, wherein the upper injection region is formed by forming a doped upper injection layer and selectively etching it to leave the said upper injection region over a predetermined area.
14. A method according to any of claims 6-11, wherein the upper injection region is formed by forming an undoped or lightly doped upper injection layer and selectively doping it over a predetermined area to define the said upper conduction region.
15. A semiconductor laser device substantially as hereinbefore described with reference to any of the accompanying drawings.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9517297A GB2304993B (en) | 1995-08-23 | 1995-08-23 | Semiconductor device |
| GB9617283A GB2305003B (en) | 1995-08-23 | 1996-08-16 | Semiconductor contact layer structure |
| JP8222796A JPH09167876A (en) | 1995-08-23 | 1996-08-23 | Semiconductor laser device, manufacturing method thereof, semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB9517297A GB2304993B (en) | 1995-08-23 | 1995-08-23 | Semiconductor device |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| GB9517297D0 GB9517297D0 (en) | 1995-10-25 |
| GB2304993A true GB2304993A (en) | 1997-03-26 |
| GB2304993B GB2304993B (en) | 1997-08-06 |
Family
ID=10779667
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9517297A Expired - Lifetime GB2304993B (en) | 1995-08-23 | 1995-08-23 | Semiconductor device |
| GB9617283A Expired - Fee Related GB2305003B (en) | 1995-08-23 | 1996-08-16 | Semiconductor contact layer structure |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB9617283A Expired - Fee Related GB2305003B (en) | 1995-08-23 | 1996-08-16 | Semiconductor contact layer structure |
Country Status (2)
| Country | Link |
|---|---|
| JP (1) | JPH09167876A (en) |
| GB (2) | GB2304993B (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6243407B1 (en) | 1997-03-21 | 2001-06-05 | Novalux, Inc. | High power laser devices |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111244188B (en) * | 2020-01-19 | 2022-04-01 | 中国科学院上海微系统与信息技术研究所 | Heterojunction AlGaAs/GaAs diode and preparation method thereof |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989006451A1 (en) * | 1988-01-06 | 1989-07-13 | Australian Telecommunications Corporation | Current injection laser |
| US4901327A (en) * | 1988-10-24 | 1990-02-13 | General Dynamics Corporation, Electronics Division | Transverse injection surface emitting laser |
| US4943970A (en) * | 1988-10-24 | 1990-07-24 | General Dynamics Corporation, Electronics Division | Surface emitting laser |
| US4949350A (en) * | 1989-07-17 | 1990-08-14 | Bell Communications Research, Inc. | Surface emitting semiconductor laser |
| US5018157A (en) * | 1990-01-30 | 1991-05-21 | At&T Bell Laboratories | Vertical cavity semiconductor lasers |
| EP0458493A2 (en) * | 1990-05-21 | 1991-11-27 | AT&T Corp. | Vertical cavity surface emitting lasers with electrically conducting mirrors |
| US5212703A (en) * | 1992-02-18 | 1993-05-18 | Eastman Kodak Company | Surface emitting lasers with low resistance bragg reflectors |
| US5388120A (en) * | 1993-09-21 | 1995-02-07 | Motorola, Inc. | VCSEL with unstable resonator |
Family Cites Families (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4012756A (en) * | 1969-12-30 | 1977-03-15 | International Business Machines Corporation | Method of inhibiting hillock formation in films and film thereby and multilayer structure therewith |
| US4048646A (en) * | 1975-02-26 | 1977-09-13 | Nippon Electric Company, Limited | Dual-gate schottky barrier gate fet having an intermediate electrode and a method of making same |
| US4165515A (en) * | 1977-12-28 | 1979-08-21 | Bell Telephone Laboratories, Incorporated | Light emitting tunnel junctions which are stable at room temperature |
| GB2144266B (en) * | 1983-06-29 | 1987-03-18 | Citizen Watch Co Ltd | Method of manufacture for ultra-miniature thin-film diodes |
-
1995
- 1995-08-23 GB GB9517297A patent/GB2304993B/en not_active Expired - Lifetime
-
1996
- 1996-08-16 GB GB9617283A patent/GB2305003B/en not_active Expired - Fee Related
- 1996-08-23 JP JP8222796A patent/JPH09167876A/en active Pending
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO1989006451A1 (en) * | 1988-01-06 | 1989-07-13 | Australian Telecommunications Corporation | Current injection laser |
| US4901327A (en) * | 1988-10-24 | 1990-02-13 | General Dynamics Corporation, Electronics Division | Transverse injection surface emitting laser |
| US4943970A (en) * | 1988-10-24 | 1990-07-24 | General Dynamics Corporation, Electronics Division | Surface emitting laser |
| US4949350A (en) * | 1989-07-17 | 1990-08-14 | Bell Communications Research, Inc. | Surface emitting semiconductor laser |
| US5018157A (en) * | 1990-01-30 | 1991-05-21 | At&T Bell Laboratories | Vertical cavity semiconductor lasers |
| EP0458493A2 (en) * | 1990-05-21 | 1991-11-27 | AT&T Corp. | Vertical cavity surface emitting lasers with electrically conducting mirrors |
| US5212703A (en) * | 1992-02-18 | 1993-05-18 | Eastman Kodak Company | Surface emitting lasers with low resistance bragg reflectors |
| US5388120A (en) * | 1993-09-21 | 1995-02-07 | Motorola, Inc. | VCSEL with unstable resonator |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6243407B1 (en) | 1997-03-21 | 2001-06-05 | Novalux, Inc. | High power laser devices |
Also Published As
| Publication number | Publication date |
|---|---|
| GB9617283D0 (en) | 1996-09-25 |
| GB2304993B (en) | 1997-08-06 |
| GB9517297D0 (en) | 1995-10-25 |
| GB2305003A (en) | 1997-03-26 |
| GB2305003B (en) | 1997-10-08 |
| JPH09167876A (en) | 1997-06-24 |
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| Date | Code | Title | Description |
|---|---|---|---|
| PE20 | Patent expired after termination of 20 years |
Expiry date: 20150822 |