GB9516279D0 - Power mosfet with overcurrent and over-temperature protection - Google Patents

Power mosfet with overcurrent and over-temperature protection

Info

Publication number: GB9516279D0
Authority: GB; United Kingdom
Prior art keywords: overcurrent; over; power mosfet; temperature protection; protection
Prior art date: 1993-09-14
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Granted

Application number

GBGB9516279.8A

Other versions

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Infineon Technologies Americas Corp

Original Assignee

International Rectifier Corp USA

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1993-09-14

Filing date

1994-09-09

Publication date

1995-10-11

1993-09-14 Priority claimed from US08/121,288 external-priority patent/US5497285A/en

1994-09-09 Application filed by International Rectifier Corp USA filed Critical International Rectifier Corp USA

1995-10-11 Publication of GB9516279D0 publication Critical patent/GB9516279D0/en

1996-01-31 Publication of GB2291743A publication Critical patent/GB2291743A/en

1996-08-28 Application granted granted Critical

1996-08-28 Publication of GB2291743B publication Critical patent/GB2291743B/en

2014-09-09 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K17/081—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit
- H03K17/0812—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit
- H03K17/08122—Modifications for protecting switching circuit against overcurrent or overvoltage without feedback from the output circuit to the control circuit by measures taken in the control circuit in field-effect transistor switches
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
- H10D84/40—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D12/00 or H10D30/00 with at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of IGFETs with BJTs
- H10D84/401—Combinations of FETs or IGBTs with BJTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D89/00—Aspects of integrated devices not covered by groups H10D84/00 - H10D88/00
- H10D89/60—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD]
- H10D89/601—Integrated devices comprising arrangements for electrical or thermal protection, e.g. protection circuits against electrostatic discharge [ESD] for devices having insulated gate electrodes, e.g. for IGFETs or IGBTs
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03K—PULSE TECHNIQUE
- H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
- H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
- H03K2017/0806—Modifications for protecting switching circuit against overcurrent or overvoltage against excessive temperature

GB9516279A 1993-09-14 1994-09-09 Power MOS-gated device with overcurrent and over-temperature protection Expired - Fee Related GB2291743B (en)

Applications Claiming Priority (2)

Application Number	Priority Date	Filing Date	Title
US08/121,288 US5497285A (en)	1993-09-14	1993-09-14	Power MOSFET with overcurrent and over-temperature protection
GB9418179A GB2281815B (en)	1993-09-14	1994-09-09	Power mosfet with overcurrent and over-temperature protection

Publications (3)

Publication Number	Publication Date
GB9516279D0 true GB9516279D0 (en)	1995-10-11
GB2291743A GB2291743A (en)	1996-01-31
GB2291743B GB2291743B (en)	1996-08-28

Family

ID=26305594

Family Applications (2)

Application Number	Title	Priority Date	Filing Date
GB9516279A Expired - Fee Related GB2291743B (en)	1993-09-14	1994-09-09	Power MOS-gated device with overcurrent and over-temperature protection
GB9516278A Expired - Fee Related GB2291742B (en)	1993-09-14	1994-09-09	Power MOS-gated device with over-temperature protection

Family Applications After (1)

Application Number	Title	Priority Date	Filing Date
GB9516278A Expired - Fee Related GB2291742B (en)	1993-09-14	1994-09-09	Power MOS-gated device with over-temperature protection

Country Status (1)

Country	Link
GB (2)	GB2291743B (en)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE59709662D1 (en) *	1996-05-21	2003-05-08	Infineon Technologies Ag	MOSFET with temperature protection
DE19633920C1 (en) *	1996-08-22	1997-10-09	Siemens Ag	Semiconductor power switch
SG55452A1 (en) *	1997-02-12	1998-12-21	Int Rectifier Corp	Method and circuit to sense the tj of mos-gated power semi conductor devices
EP0910870B1 (en) *	1997-02-19	2008-05-14	Nxp B.V.	Power semiconductor devices with a temperature sensor circuit

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH04323863A (en) *	1991-04-23	1992-11-13	Toyota Autom Loom Works Ltd	semiconductor equipment
DE4216810C2 (en) *	1991-05-31	1999-09-16	Fuji Electric Co Ltd	Control circuit for a conductivity change MISFET
GB2270795B (en) *	1992-09-18	1995-02-15	Texas Instruments Ltd	Improvements in or relating to the trimming of integrated circuits

1994
- 1994-09-09 GB GB9516279A patent/GB2291743B/en not_active Expired - Fee Related
- 1994-09-09 GB GB9516278A patent/GB2291742B/en not_active Expired - Fee Related

Also Published As

Publication number	Publication date
GB2291743A (en)	1996-01-31
GB2291742B (en)	1996-08-28
GB2291743B (en)	1996-08-28
GB9516278D0 (en)	1995-10-11
GB2291742A (en)	1996-01-31

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Legal Events

Date	Code	Title	Description
2005-04-27	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 20040909