GB948289A - A method of reducing the concentration of doping material in a doped rod of semi-conductor material - Google Patents
A method of reducing the concentration of doping material in a doped rod of semi-conductor materialInfo
- Publication number
- GB948289A GB948289A GB4296061A GB4296061A GB948289A GB 948289 A GB948289 A GB 948289A GB 4296061 A GB4296061 A GB 4296061A GB 4296061 A GB4296061 A GB 4296061A GB 948289 A GB948289 A GB 948289A
- Authority
- GB
- United Kingdom
- Prior art keywords
- rod
- semi
- doped
- less
- doping
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000000463 material Substances 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 2
- 239000002019 doping agent Substances 0.000 abstract 2
- 229910052698 phosphorus Inorganic materials 0.000 abstract 2
- 239000011574 phosphorus Substances 0.000 abstract 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052785 arsenic Inorganic materials 0.000 abstract 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000004857 zone melting Methods 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
Abstract
A doped semi-conductor rod is zone-melted while held at each end in a vacuum of less than 10-3 mm. Hg, the molten zone being maintained of constant length and being passed along the road at a speed of less than 1,4 mm./minute preferably 0,7-1,2 mm./minute, so as to produce a uniform concentration of doping agent throughout the length of the rod. The doping agent has a lower vapour pressure than the semi-conductor material and a distribution coefficient of less than one. The rod to be treated is of uniform diameter and its doping at any one cross-section is substantially the same as that at any other cross-section. The diameter of the rod may have been rendered uniform by appropriate adjustment of its ends during a zone-melting operation. The rod treated may be silicon doped with phosphorus or germanium doped with phosphorus or arsenic. Specification 919,837 is referred to.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES71478A DE1205955B (en) | 1960-11-30 | 1960-11-30 | Process for crucible-free zone melting of a silicon rod doped with phosphorus in a vacuum |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB948289A true GB948289A (en) | 1964-01-29 |
Family
ID=7502504
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4296061A Expired GB948289A (en) | 1960-11-30 | 1961-11-30 | A method of reducing the concentration of doping material in a doped rod of semi-conductor material |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE609336A (en) |
| CH (1) | CH409884A (en) |
| DE (1) | DE1205955B (en) |
| GB (1) | GB948289A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4029500A (en) * | 1975-03-11 | 1977-06-14 | Nasa | Method of growing composites of the type exhibiting the Soret effect |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE510303A (en) * | 1951-11-16 |
-
1960
- 1960-11-30 DE DES71478A patent/DE1205955B/en active Pending
-
1961
- 1961-09-25 CH CH1113261A patent/CH409884A/en unknown
- 1961-10-19 BE BE609336A patent/BE609336A/en unknown
- 1961-11-30 GB GB4296061A patent/GB948289A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4029500A (en) * | 1975-03-11 | 1977-06-14 | Nasa | Method of growing composites of the type exhibiting the Soret effect |
Also Published As
| Publication number | Publication date |
|---|---|
| CH409884A (en) | 1966-03-31 |
| BE609336A (en) | 1962-02-15 |
| DE1205955B (en) | 1965-12-02 |
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