[go: up one dir, main page]

GB946064A - Zone-by-zone melting of rods of semi-conductor material - Google Patents

Zone-by-zone melting of rods of semi-conductor material

Info

Publication number
GB946064A
GB946064A GB21029/61A GB2102961A GB946064A GB 946064 A GB946064 A GB 946064A GB 21029/61 A GB21029/61 A GB 21029/61A GB 2102961 A GB2102961 A GB 2102961A GB 946064 A GB946064 A GB 946064A
Authority
GB
United Kingdom
Prior art keywords
zone
passed
molten
rods
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB21029/61A
Other languages
English (en)
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Schuckertwerke AG
Siemens Corp
Original Assignee
Siemens Schuckertwerke AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Schuckertwerke AG, Siemens Corp filed Critical Siemens Schuckertwerke AG
Publication of GB946064A publication Critical patent/GB946064A/en
Expired legal-status Critical Current

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10STECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S117/00Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
    • Y10S117/906Special atmosphere other than vacuum or inert

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Silicon Compounds (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
GB21029/61A 1960-06-11 1961-06-09 Zone-by-zone melting of rods of semi-conductor material Expired GB946064A (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DES68896A DE1207341B (de) 1960-06-11 1960-06-11 Verfahren zum tiegelfreien Zonenschmelzen von Germanium- oder Siliciumstaeben
DES71088A DE1209102B (de) 1960-06-11 1960-11-02 Verfahren zum tiegelfreien Zonenschmelzen von Germanium- oder Siliciumstaeben

Publications (1)

Publication Number Publication Date
GB946064A true GB946064A (en) 1964-01-08

Family

ID=25996115

Family Applications (1)

Application Number Title Priority Date Filing Date
GB21029/61A Expired GB946064A (en) 1960-06-11 1961-06-09 Zone-by-zone melting of rods of semi-conductor material

Country Status (5)

Country Link
US (1) US3223493A (de)
BE (1) BE604423A (de)
CH (1) CH391305A (de)
DE (2) DE1207341B (de)
GB (1) GB946064A (de)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3660062A (en) * 1968-02-29 1972-05-02 Siemens Ag Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
BE510303A (de) * 1951-11-16
BE548227A (de) * 1955-07-22

Also Published As

Publication number Publication date
DE1209102B (de) 1966-01-20
BE604423A (fr) 1961-11-30
DE1207341B (de) 1965-12-23
US3223493A (en) 1965-12-14
CH391305A (de) 1965-04-30

Similar Documents

Publication Publication Date Title
BE612135A (fr) Procédé et dispositif pour la production de produits de condensation purs de l'acétone.
BE578007A (fr) Composition de verre et son procédé de préparation.
GB946064A (en) Zone-by-zone melting of rods of semi-conductor material
BE575484A (fr) Procédé de préparation de nouveaux composés isomères, et produits à l'aide de ce procédé.
GB1031560A (en) Improvements in or relating to the production of monocrystalline semiconductor material
GB1081600A (en) A method of melting a rod of crystalline material zone-by-zone
GB1065187A (en) A method of producing a rod of semi-conductor material
GB1081827A (en) Improvements in or relating to a floating zone process
GB894739A (en) Improvements in or relating to methods for the treatment of meltable material in rod-shaped form by zone-melting
GB1375132A (de)
GB915882A (en) Improvements in or relating to processes for the production of mono-crystalline semi-conductor rods
OA01403A (fr) Procédé de fabrication de l'a-tocophéryl-quinone.
GB1084930A (en) Zone-by-zone melting of a rod of semi-conductor material
CH391951A (de) Vorrichtung zur Herstellung von Monofilamenten nach dem Schmelzspinnverfahren
GB876467A (en) Improvements in or relating to apparatus for use in melting a zone of a rod of semi-conductor material
GB915881A (en) A process for producing a monocrystalline rod of semi-conductor material
GB1322975A (en) Methods of producing single crystals of semiconductor material
GB1006034A (en) A method of producing a rod of semi-conductor material
FR1191046A (fr) Composition réfractaire, son procédé de fabrication et ses applications
OA00855A (fr) Acide polychloro-cyanurique stabilisé, son procédé de préparation et ses applications.
FR1166369A (fr) Procédé et dispositions de fabrication d'écharpes fines tissées avec façonnage jacquard, et les écharpes exécutées selon ce procédé et ses dispositions
GB1007909A (en) A process for zone-by-zone melting of a rod of crystalline material
FR1331345A (fr) Procédé pour la préparation de nouveaux prégnènes, entre autres du delta4-3,20-dioxo-6 alpha-fluoro-16 alpha-méthyl-11 beta,14 alpha,17 alpha,21-tétrahydroxy-prégnène et de son 21-triméthylacétate
GB1041504A (en) A process for melting a rod of crystalline material zone-by-zone
FR1234741A (fr) Procédé de préparation de 11, 17 dihydroxy pregnanes 3, 20-diones méthylées