GB946064A - Zone-by-zone melting of rods of semi-conductor material - Google Patents
Zone-by-zone melting of rods of semi-conductor materialInfo
- Publication number
- GB946064A GB946064A GB21029/61A GB2102961A GB946064A GB 946064 A GB946064 A GB 946064A GB 21029/61 A GB21029/61 A GB 21029/61A GB 2102961 A GB2102961 A GB 2102961A GB 946064 A GB946064 A GB 946064A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- passed
- molten
- rods
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000004857 zone melting Methods 0.000 title abstract 2
- 239000000463 material Substances 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 230000006698 induction Effects 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Abstract
946,064. Zone - melting. S I E M E N S - SCHUCKERTWERKE A.G. June 9, 1961 [June 11, 1960; Nov. 2, 1960], No. 21029/61. Heading B1S. A molten zone is passed a plurality of times through a vertical rod of silicon held at each end in an evacuated chamber, the process being interrupted before the passage of the last zone and air or water vapour introduced temporarily into the chamber. Each molten zone, which is produced by induction heating, is passed through the rod from a seed fused to one end. An incandescent but not molten zone is passed in the opposite direction. Ten molten zones may be passed.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES68896A DE1207341B (en) | 1960-06-11 | 1960-06-11 | Process for crucible-free zone melting of germanium or silicon rods |
| DES71088A DE1209102B (en) | 1960-06-11 | 1960-11-02 | Process for crucible-free zone melting of germanium or silicon rods |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB946064A true GB946064A (en) | 1964-01-08 |
Family
ID=25996115
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB21029/61A Expired GB946064A (en) | 1960-06-11 | 1961-06-09 | Zone-by-zone melting of rods of semi-conductor material |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3223493A (en) |
| BE (1) | BE604423A (en) |
| CH (1) | CH391305A (en) |
| DE (2) | DE1207341B (en) |
| GB (1) | GB946064A (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US3660062A (en) * | 1968-02-29 | 1972-05-02 | Siemens Ag | Method for crucible-free floating zone melting a crystalline rod, especially of semi-crystalline material |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| BE510303A (en) * | 1951-11-16 | |||
| BE548227A (en) * | 1955-07-22 |
-
1960
- 1960-06-11 DE DES68896A patent/DE1207341B/en active Pending
- 1960-11-02 DE DES71088A patent/DE1209102B/en active Pending
-
1961
- 1961-03-09 CH CH287361A patent/CH391305A/en unknown
- 1961-05-31 BE BE604423A patent/BE604423A/en unknown
- 1961-06-09 GB GB21029/61A patent/GB946064A/en not_active Expired
- 1961-06-09 US US115974A patent/US3223493A/en not_active Expired - Lifetime
Also Published As
| Publication number | Publication date |
|---|---|
| DE1209102B (en) | 1966-01-20 |
| BE604423A (en) | 1961-11-30 |
| DE1207341B (en) | 1965-12-23 |
| US3223493A (en) | 1965-12-14 |
| CH391305A (en) | 1965-04-30 |
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