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GB927864A - Improvements in or relating to semi-conductor devices - Google Patents

Improvements in or relating to semi-conductor devices

Info

Publication number
GB927864A
GB927864A GB33431/59A GB3343159A GB927864A GB 927864 A GB927864 A GB 927864A GB 33431/59 A GB33431/59 A GB 33431/59A GB 3343159 A GB3343159 A GB 3343159A GB 927864 A GB927864 A GB 927864A
Authority
GB
United Kingdom
Prior art keywords
electrode
semi
heat sink
conductor
molybdenum
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB33431/59A
Inventor
Arthur Langridge
Franco Manzoli
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Mobility Ltd
Original Assignee
Westinghouse Brake and Signal Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Brake and Signal Co Ltd filed Critical Westinghouse Brake and Signal Co Ltd
Priority to GB33431/59A priority Critical patent/GB927864A/en
Publication of GB927864A publication Critical patent/GB927864A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
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    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
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    • H01L2224/29101—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
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    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1203—Rectifying Diode
    • H01L2924/12036—PN diode

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

927,864. Semi-conductor devices. WESTING- HOUSE BRAKE & SIGNAL CO. Ltd. Oct. 3, 1960 [Oct. 2, 1959], No. 33431/59. Class 37. An electrode of a semi-conductor device is connected to and supported by a heat sink by means of an intermediate layer which has the same coefficient of expansion as the electrode and to which the electrode is soft soldered and which is rigidly connected to the heat sink. In the arrangement shown in Fig. 1 a silicon diode 2 comprising a PN junction has an electrode 3 of molybdenum attached at its lower face. The molybdenum electrode is soft soldered to a metallic layer 5 of silver saturated tungsten which is in turn hard soldered to the heat sink 7. At the top face of the semi-conductor another molybdenum electrode 8 is provided with a flexible connection 9 to an extension 10. The heat sink is provided with a steel rim 11 and a housing member for the diode is sealed between the rim and the connecting lead 10.
GB33431/59A 1959-10-02 1959-10-02 Improvements in or relating to semi-conductor devices Expired GB927864A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB33431/59A GB927864A (en) 1959-10-02 1959-10-02 Improvements in or relating to semi-conductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB33431/59A GB927864A (en) 1959-10-02 1959-10-02 Improvements in or relating to semi-conductor devices

Publications (1)

Publication Number Publication Date
GB927864A true GB927864A (en) 1963-06-06

Family

ID=10352869

Family Applications (1)

Application Number Title Priority Date Filing Date
GB33431/59A Expired GB927864A (en) 1959-10-02 1959-10-02 Improvements in or relating to semi-conductor devices

Country Status (1)

Country Link
GB (1) GB927864A (en)

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