GB926280A - Improvements in or relating to semi-conductor devices and methods of manufacturing these devices - Google Patents
Improvements in or relating to semi-conductor devices and methods of manufacturing these devicesInfo
- Publication number
- GB926280A GB926280A GB11598/60A GB1159860A GB926280A GB 926280 A GB926280 A GB 926280A GB 11598/60 A GB11598/60 A GB 11598/60A GB 1159860 A GB1159860 A GB 1159860A GB 926280 A GB926280 A GB 926280A
- Authority
- GB
- United Kingdom
- Prior art keywords
- type
- wire
- layer
- wires
- semi
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000000034 method Methods 0.000 title abstract 4
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000005275 alloying Methods 0.000 abstract 4
- 229910052782 aluminium Inorganic materials 0.000 abstract 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 3
- 239000004411 aluminium Substances 0.000 abstract 3
- 229910052787 antimony Inorganic materials 0.000 abstract 3
- 229910052785 arsenic Inorganic materials 0.000 abstract 3
- 239000012535 impurity Substances 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 2
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 abstract 2
- 238000009792 diffusion process Methods 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 abstract 1
- 229910001260 Pt alloy Inorganic materials 0.000 abstract 1
- AZDRQVAHHNSJOQ-UHFFFAOYSA-N alumane Chemical group [AlH3] AZDRQVAHHNSJOQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 239000012876 carrier material Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 229910052738 indium Inorganic materials 0.000 abstract 1
- 229910052745 lead Inorganic materials 0.000 abstract 1
- 229910052750 molybdenum Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- 229910052721 tungsten Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Non-Insulated Conductors (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
926,280. Semi-conductor devices. SIEMENS & HALSKE A.G. April 1, 1960 [April 3, 1959], No. 11598/60. Addition to 849,447. Class 37. A semi-conductor device comprises a plurality of electrodes produced by alloying wires to one surface of a semi-conductor crystal housing a layer of one type of conductivity on a body of the opposite type, the wires being coated with different materials and having substantial parts of their lengths in contact with the surface. In the Figure, wires 5 and 6, which may be 10Á diameter, are pressed against the surface of a P-type germanium body having a 1-5Á thick N-type layer 1 produced by diffusion of arsenic or antimony. Pressure may be provided by the weight of a frame upon which the wires are wound as described in the parent Specification, or by a punch or by the pressure of graphite powder. Wire 6 is coated with a donor impurity such as aluminium and wire 5 with both donor and acceptor material, such as aluminium and antimony. Alloying at 600 to 800 C. followed by a diffusion step at a temperature 10 to 50 degrees lower is then performed to provide an ohmic contact for wire 6 with an N+ layer 3 between the wire and N-type layer 1<SP>11</SP> and a rectifying contact for wire 5 due to the production of a P-type layer 2 between the wire and N-type layer 1<SP>11</SP>. In the process, the arsenic diffuses more quickly than the aluminium to provide the N-type region 1<SP>1</SP> while the aluminium forms the P-type layer 2. Wire 6 forms the base electrode, wire 5 the emitter, and the collector is connected ohmically to the underside of body 4. The N-type base zone comprising layer 1 and region 3 has a varying concentration of impurity centres to provide a drift type transistor. An etching process is then applied to produce the " plateau " shape of the body shown in the drawing. Silicon can be used in place of germanium, the alloying temperature then being 1000 to 1300 C. The distance between P-type zone 2 and N+ type zone 3 is made greater than the total thickness of the N-type layers 1<SP>1</SP> and 1<SP>11</SP>. The N-type diffused layer on body 4 may be produced simultaneously or after the wire alloying process. The wires may consist of W, Mo or Ta and coated electrolytically or by drawing through a droplet. The coating material may comprise a carrier material of Au, Ag, Bi or Pb or a Au-Pt alloy with an impurity consisting of B, Al, Ga or In or As or Sb.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES48077A DE1207507B (en) | 1956-03-23 | 1956-03-23 | Process for the production of a planar alloy transistor consisting of germanium or silicon |
| DES0062423 | 1959-04-03 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB926280A true GB926280A (en) | 1963-05-15 |
Family
ID=25995286
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB11598/60A Expired GB926280A (en) | 1956-03-23 | 1960-04-01 | Improvements in or relating to semi-conductor devices and methods of manufacturing these devices |
Country Status (4)
| Country | Link |
|---|---|
| CH (1) | CH359791A (en) |
| FR (1) | FR77446E (en) |
| GB (1) | GB926280A (en) |
| NL (2) | NL250053A (en) |
-
0
- NL NL110415D patent/NL110415C/xx active
- NL NL250053D patent/NL250053A/xx unknown
-
1960
- 1960-03-29 CH CH359791D patent/CH359791A/en unknown
- 1960-04-01 GB GB11598/60A patent/GB926280A/en not_active Expired
- 1960-04-04 FR FR823515A patent/FR77446E/en not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| NL110415C (en) | |
| NL250053A (en) | |
| FR77446E (en) | 1962-03-02 |
| CH359791A (en) | 1962-01-31 |
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