GB911292A - Improvements in and relating to semi-conductor devices - Google Patents
Improvements in and relating to semi-conductor devicesInfo
- Publication number
- GB911292A GB911292A GB1561/58A GB156158A GB911292A GB 911292 A GB911292 A GB 911292A GB 1561/58 A GB1561/58 A GB 1561/58A GB 156158 A GB156158 A GB 156158A GB 911292 A GB911292 A GB 911292A
- Authority
- GB
- United Kingdom
- Prior art keywords
- region
- semi
- conductor
- type
- antimony
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 8
- 229910052787 antimony Inorganic materials 0.000 abstract 5
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 5
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 abstract 3
- 238000005275 alloying Methods 0.000 abstract 3
- 239000000463 material Substances 0.000 abstract 3
- 238000000034 method Methods 0.000 abstract 3
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- 229910052782 aluminium Inorganic materials 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 2
- 238000005530 etching Methods 0.000 abstract 2
- 229910052732 germanium Inorganic materials 0.000 abstract 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 2
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910000846 In alloy Inorganic materials 0.000 abstract 1
- 229910000978 Pb alloy Inorganic materials 0.000 abstract 1
- 239000004793 Polystyrene Substances 0.000 abstract 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 150000001875 compounds Chemical class 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 238000009792 diffusion process Methods 0.000 abstract 1
- 239000006185 dispersion Substances 0.000 abstract 1
- 230000005669 field effect Effects 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 238000004519 manufacturing process Methods 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229920002223 polystyrene Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 239000002002 slurry Substances 0.000 abstract 1
- 238000001771 vacuum deposition Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J19/00—Chemical, physical or physico-chemical processes in general; Their relevant apparatus
- B01J19/08—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor
- B01J19/10—Processes employing the direct application of electric or wave energy, or particle radiation; Apparatus therefor employing sonic or ultrasonic vibrations
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/228—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a liquid phase, e.g. alloy diffusion processes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- General Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Health & Medical Sciences (AREA)
- Health & Medical Sciences (AREA)
- Toxicology (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Organic Chemistry (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
911,292. Semi-conductor devices. MULLARD Ltd. Jan. 14, 1959 [Jan. 16, 1958], No. 1561/58. Class 37. In the manufacture of a semi-conductor device, material is alloyed to the semi-conductor over an area, a narrow channel is cut in the resolidified alloying material extending at least to the recrystallized semi-conductor region, and then the assembly reheated to realloy the separate parts to the semi-conductor. Fig. 2 shows a P-type germanium crystal 1 to which an alloy of lead and 1% antimony was alloyed by heating in hydrogen at 700 C. for 3 minutes to form N-type regions 2a and 2b. Regions 3a, and 3b consist of resolidified lead and antimony and regions 5 consist of a thin N-type layer, beyond the interface produced by diffusion of the antimony during the alloying process. Slot 6 is then cut into region 1, for example by ultrasonic means with a slurry of aluminium oxide abrasive or by reciprocating a thin wire with abrasive, and the assembly then etched with hydrogen peroxide. Before or after etching, region 3b is coated by vacuum deposition or by means of a dispersion, with aluminium and the whole then heated for 10 minutes at 750 C. This results in the formation of P-type region 9b (Fig. 3), and a further N-type 9a region by an alloying process and the extension of the antimony diffused layer to form a well defined and extended N-type layer 12, since antimony diffuses more than aluminium. The lower portion below line 13 is then removed by an etching process and an alloy of indium and 1% gallium is alloyed to this region to form an ohmic contact 15 to the P- type region 1. Nickel wires 16, 18 and 19 (Fig. 5), are soldered to metallic regions 15, 3a and 3b to form the collector, base and emitter electrodes respectively of a transistor, the N- type diffused layer 12 constituting the base zone. While slot 5 is protected with a polystyrene layer, the device is electrolytically etched to remove part of the layer 12 and undercutting regions 3a, 3b and 15. The resulting transistor has low base resistance since base region 3a is near emitter region 3b, and low interelectrode capacitance. In an alternative arrangement, the electrodes are annular shaped. The semi-conductor material may consist of germanium, silicon, GaAs, InP or other AIII BV compound. Tin and bismuth may be used in place of lead. The invention may also be applied to a diode or a field effect transistor, and the semi-conductor may be poly- or mono-crystalline.
Priority Applications (8)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| NL121250D NL121250C (en) | 1958-01-16 | ||
| NL235051D NL235051A (en) | 1958-01-16 | ||
| BE574814D BE574814A (en) | 1958-01-16 | ||
| GB1561/58A GB911292A (en) | 1958-01-16 | 1958-01-16 | Improvements in and relating to semi-conductor devices |
| CH6825259A CH370165A (en) | 1958-01-16 | 1959-01-13 | Method for manufacturing a semiconductor device, in particular a transistor |
| DEN16116A DE1090770B (en) | 1958-01-16 | 1959-01-14 | Method for the production of a semiconductor arrangement with fused electrodes lying close together |
| FR784224A FR1225692A (en) | 1958-01-16 | 1959-01-16 | Method of manufacturing a semiconductor electrode system, in particular a transistron |
| US787195A US3069297A (en) | 1958-01-16 | 1959-01-16 | Semi-conductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1561/58A GB911292A (en) | 1958-01-16 | 1958-01-16 | Improvements in and relating to semi-conductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB911292A true GB911292A (en) | 1962-11-21 |
Family
ID=9724105
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1561/58A Expired GB911292A (en) | 1958-01-16 | 1958-01-16 | Improvements in and relating to semi-conductor devices |
Country Status (7)
| Country | Link |
|---|---|
| US (1) | US3069297A (en) |
| BE (1) | BE574814A (en) |
| CH (1) | CH370165A (en) |
| DE (1) | DE1090770B (en) |
| FR (1) | FR1225692A (en) |
| GB (1) | GB911292A (en) |
| NL (2) | NL121250C (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1232269B (en) * | 1963-08-23 | 1967-01-12 | Telefunken Patent | Diffusion process for manufacturing a semiconductor component with emitter, base and collector zones |
Families Citing this family (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL264084A (en) * | 1959-06-23 | |||
| US3276925A (en) * | 1959-12-12 | 1966-10-04 | Nippon Electric Co | Method of producing tunnel diodes by double alloying |
| NL121714C (en) * | 1959-12-14 | |||
| BE627004A (en) * | 1962-01-12 | |||
| US3243325A (en) * | 1962-06-09 | 1966-03-29 | Fujitsu Ltd | Method of producing a variable-capacitance germanium diode and product produced thereby |
| GB1074283A (en) * | 1963-01-09 | 1967-07-05 | Mullard Ltd | Improvements in and relating to semiconductor devices |
| DE1215754B (en) * | 1964-02-24 | 1966-05-05 | Danfoss As | Electronic switch |
| DE1614861C3 (en) * | 1967-09-01 | 1982-03-11 | Telefunken Patentverwertungsgesellschaft Mbh, 7900 Ulm | Process for the manufacture of a junction field effect transistor |
| US3955270A (en) * | 1973-08-31 | 1976-05-11 | Bell Telephone Laboratories, Incorporated | Methods for making semiconductor devices |
| US3905162A (en) * | 1974-07-23 | 1975-09-16 | Silicon Material Inc | Method of preparing high yield semiconductor wafer |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2865082A (en) * | 1953-07-16 | 1958-12-23 | Sylvania Electric Prod | Semiconductor mount and method |
| BE533946A (en) * | 1953-12-09 | |||
| NL207969A (en) * | 1955-06-28 | |||
| US2837704A (en) * | 1954-12-02 | 1958-06-03 | Junction transistors | |
| DE1073632B (en) * | 1956-06-18 | 1960-01-21 | Radio Corporation Of America, New York, N. Y. (V. St. A.) | Drift transistor with a zone sequence P-N-P or N-P-N and process for its production |
-
0
- NL NL235051D patent/NL235051A/xx unknown
- NL NL121250D patent/NL121250C/xx active
- BE BE574814D patent/BE574814A/xx unknown
-
1958
- 1958-01-16 GB GB1561/58A patent/GB911292A/en not_active Expired
-
1959
- 1959-01-13 CH CH6825259A patent/CH370165A/en unknown
- 1959-01-14 DE DEN16116A patent/DE1090770B/en active Pending
- 1959-01-16 US US787195A patent/US3069297A/en not_active Expired - Lifetime
- 1959-01-16 FR FR784224A patent/FR1225692A/en not_active Expired
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1232269B (en) * | 1963-08-23 | 1967-01-12 | Telefunken Patent | Diffusion process for manufacturing a semiconductor component with emitter, base and collector zones |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1090770B (en) | 1960-10-13 |
| CH370165A (en) | 1963-06-30 |
| NL235051A (en) | |
| BE574814A (en) | |
| US3069297A (en) | 1962-12-18 |
| NL121250C (en) | |
| FR1225692A (en) | 1960-07-04 |
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