GB902016A - Improvements in or relating to semi-conductors - Google Patents
Improvements in or relating to semi-conductorsInfo
- Publication number
- GB902016A GB902016A GB16580/59A GB1658059A GB902016A GB 902016 A GB902016 A GB 902016A GB 16580/59 A GB16580/59 A GB 16580/59A GB 1658059 A GB1658059 A GB 1658059A GB 902016 A GB902016 A GB 902016A
- Authority
- GB
- United Kingdom
- Prior art keywords
- zone
- melting
- rod
- phosphorus
- conductors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 3
- 229910052698 phosphorus Inorganic materials 0.000 abstract 3
- 239000011574 phosphorus Substances 0.000 abstract 3
- 238000004857 zone melting Methods 0.000 abstract 3
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000002019 doping agent Substances 0.000 abstract 1
- 230000008020 evaporation Effects 0.000 abstract 1
- 238000001704 evaporation Methods 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B13/00—Single-crystal growth by zone-melting; Refining by zone-melting
- C30B13/08—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone
- C30B13/10—Single-crystal growth by zone-melting; Refining by zone-melting adding crystallising materials or reactants forming it in situ to the molten zone with addition of doping materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S117/00—Single-crystal, oriented-crystal, and epitaxy growth processes; non-coating apparatus therefor
- Y10S117/906—Special atmosphere other than vacuum or inert
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DES58305A DE1164680B (de) | 1958-05-21 | 1958-05-21 | Verfahren zum Herstellen von stabfoermigen Halbleiterkoerpern hoher Reinheit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB902016A true GB902016A (en) | 1962-07-25 |
Family
ID=7492451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB16580/59A Expired GB902016A (en) | 1958-05-21 | 1959-05-14 | Improvements in or relating to semi-conductors |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US3167512A (de) |
| CH (1) | CH369830A (de) |
| DE (1) | DE1164680B (de) |
| FR (1) | FR1226810A (de) |
| GB (1) | GB902016A (de) |
Families Citing this family (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE1544292C3 (de) * | 1966-06-13 | 1976-01-08 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | Verfahren zum Herstellen stabförmiger Siliciumeinkristalle mit über die gesamte Stablänge homogener Antimondotierung |
| GB1542868A (en) * | 1975-11-14 | 1979-03-28 | Siemens Ag | Production of phosphorus-doped monocrystalline silicon rods |
| US4094730A (en) * | 1977-03-11 | 1978-06-13 | The United States Of America As Represented By The Secretary Of The Air Force | Method for fabrication of high minority carrier lifetime, low to moderate resistivity, single crystal silicon |
| GB2082933B (en) * | 1980-09-03 | 1984-10-03 | Westinghouse Electric Corp | High voltage semiconductor materials and structures and method for their |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US2730470A (en) * | 1950-06-15 | 1956-01-10 | Bell Telephone Labor Inc | Method of making semi-conductor crystals |
| BE510303A (de) * | 1951-11-16 | |||
| US2792317A (en) * | 1954-01-28 | 1957-05-14 | Westinghouse Electric Corp | Method of producing multiple p-n junctions |
| NL111118C (de) * | 1954-04-01 | |||
| US2813048A (en) * | 1954-06-24 | 1957-11-12 | Bell Telephone Labor Inc | Temperature gradient zone-melting |
| DE1018558B (de) * | 1954-07-15 | 1957-10-31 | Siemens Ag | Verfahren zur Herstellung von Richtleitern, Transistoren u. dgl. aus einem Halbleiter |
| NL109285C (de) * | 1955-09-06 |
-
1958
- 1958-05-21 DE DES58305A patent/DE1164680B/de active Pending
-
1959
- 1959-05-14 GB GB16580/59A patent/GB902016A/en not_active Expired
- 1959-05-15 CH CH7324359A patent/CH369830A/de unknown
- 1959-05-20 US US814634A patent/US3167512A/en not_active Expired - Lifetime
- 1959-05-21 FR FR795189A patent/FR1226810A/fr not_active Expired
Also Published As
| Publication number | Publication date |
|---|---|
| FR1226810A (fr) | 1960-08-16 |
| CH369830A (de) | 1963-06-15 |
| US3167512A (en) | 1965-01-26 |
| DE1164680B (de) | 1964-03-05 |
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