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GB887208A - Improvements in or relating to semiconductor devices - Google Patents

Improvements in or relating to semiconductor devices

Info

Publication number
GB887208A
GB887208A GB4887/58A GB488758A GB887208A GB 887208 A GB887208 A GB 887208A GB 4887/58 A GB4887/58 A GB 4887/58A GB 488758 A GB488758 A GB 488758A GB 887208 A GB887208 A GB 887208A
Authority
GB
United Kingdom
Prior art keywords
relating
semiconductor devices
consist
alloy
electrode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4887/58A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CBS Corp
Original Assignee
Westinghouse Electric Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp
Publication of GB887208A publication Critical patent/GB887208A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/80—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials
    • H10D62/83—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge
    • H10D62/834—Semiconductor bodies, or regions thereof, of devices having potential barriers characterised by the materials being Group IV materials, e.g. B-doped Si or undoped Ge further characterised by the dopants
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D10/00—Bipolar junction transistors [BJT]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

In a semiconductor device (see Group XXXVI), an electrode may consist of an alloy of 1% Ga and 99% In or 10% Au, 3% Al and 87% Ag or 3% Al, 10% Ag and 87% In or 5% In and 95% Sn or 5% In, 2% Al and 93% Sn or 10% Al, 20% Ag and 70% In or 10% Al, 30% Ag and 60% In.
GB4887/58A 1957-02-27 1958-02-14 Improvements in or relating to semiconductor devices Expired GB887208A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US887208XA 1957-02-27 1957-02-27

Publications (1)

Publication Number Publication Date
GB887208A true GB887208A (en) 1962-01-17

Family

ID=22213052

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4887/58A Expired GB887208A (en) 1957-02-27 1958-02-14 Improvements in or relating to semiconductor devices

Country Status (1)

Country Link
GB (1) GB887208A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3240991A (en) * 1964-10-01 1966-03-15 Westinghouse Electric Corp Static inverter
US3271637A (en) * 1963-07-22 1966-09-06 Nasa Gaas solar detector using manganese as a doping agent

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271637A (en) * 1963-07-22 1966-09-06 Nasa Gaas solar detector using manganese as a doping agent
US3240991A (en) * 1964-10-01 1966-03-15 Westinghouse Electric Corp Static inverter

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