GB806251A - Improvements in or relating to the manufacture of semi-conductor devices - Google Patents
Improvements in or relating to the manufacture of semi-conductor devicesInfo
- Publication number
- GB806251A GB806251A GB1949156A GB1949156A GB806251A GB 806251 A GB806251 A GB 806251A GB 1949156 A GB1949156 A GB 1949156A GB 1949156 A GB1949156 A GB 1949156A GB 806251 A GB806251 A GB 806251A
- Authority
- GB
- United Kingdom
- Prior art keywords
- alloying
- semi
- contact
- conductor
- passing
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 5
- 238000004519 manufacturing process Methods 0.000 title 1
- 239000000463 material Substances 0.000 abstract 6
- 238000005275 alloying Methods 0.000 abstract 5
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 abstract 2
- 239000000956 alloy Substances 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 2
- 238000010438 heat treatment Methods 0.000 abstract 2
- 238000002844 melting Methods 0.000 abstract 2
- 230000008018 melting Effects 0.000 abstract 2
- 238000000034 method Methods 0.000 abstract 2
- 229910052787 antimony Inorganic materials 0.000 abstract 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 abstract 1
- 229910052786 argon Inorganic materials 0.000 abstract 1
- 238000001816 cooling Methods 0.000 abstract 1
- 238000001035 drying Methods 0.000 abstract 1
- 238000009713 electroplating Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 230000005496 eutectics Effects 0.000 abstract 1
- 239000010931 gold Substances 0.000 abstract 1
- 229910052737 gold Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000012768 molten material Substances 0.000 abstract 1
- 230000035515 penetration Effects 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 238000005406 washing Methods 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/24—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Electroplating Methods And Accessories (AREA)
Abstract
806,251. Semi-conductor devices. GENERAL ELECTRIC CO. Ltd. May 30, 1957 [June 22, 1956, No. 19491/56. Class 37. In a method of alloying a significant impurity containing material to a semi-conductor body, the alloying is initiated by first heating the body and material in contact to a temperature above the eutectic point of the material and semi-conductor material but insufficient to cause alloying, and then passing a pulse of electric current between the material and the body to cause local melting at the contact area. A PN junction rectifier is made by the steps of electroplating an ohmic contact on one face of a wafer of P-type silicon, placing the wafer in a furnace with its other face in contact with the end of a gold wire doped with 1 per cent of antimony and with lead wires touching the gold wire and plated electrode respectively, heating the assembly to 360 ‹ C. while passing dry argon through the furnace, passing a' current pulse between the lead wires to initiate alloying by local melting, raising the temperature to establish a suitable degree of alloy penetration, and finally cooling to room temperature to form a recrystallized N-type region overlain by a gold contact. After etching, washing and drying the device is encapsulated in a hermetically sealed container. In an alternative method, especially useful where two alloy contacts of different materials are to be made to a single semi-conductor body the molten material formed by the current pulse is immediately resolidified and the alloying completed at a later stage by remelting.
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1949156A GB806251A (en) | 1956-06-22 | 1956-06-22 | Improvements in or relating to the manufacture of semi-conductor devices |
| FR1176073D FR1176073A (en) | 1956-06-22 | 1957-06-17 | Semiconductor devices |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB1949156A GB806251A (en) | 1956-06-22 | 1956-06-22 | Improvements in or relating to the manufacture of semi-conductor devices |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB806251A true GB806251A (en) | 1958-12-23 |
Family
ID=10130244
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB1949156A Expired GB806251A (en) | 1956-06-22 | 1956-06-22 | Improvements in or relating to the manufacture of semi-conductor devices |
Country Status (2)
| Country | Link |
|---|---|
| FR (1) | FR1176073A (en) |
| GB (1) | GB806251A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110148581A (en) * | 2018-02-10 | 2019-08-20 | 姜富帅 | A kind of metal-semiconductor metallization process and method |
-
1956
- 1956-06-22 GB GB1949156A patent/GB806251A/en not_active Expired
-
1957
- 1957-06-17 FR FR1176073D patent/FR1176073A/en not_active Expired
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110148581A (en) * | 2018-02-10 | 2019-08-20 | 姜富帅 | A kind of metal-semiconductor metallization process and method |
| CN110148581B (en) * | 2018-02-10 | 2022-05-17 | 姜富帅 | Metallization process and method of metal-semiconductor |
Also Published As
| Publication number | Publication date |
|---|---|
| FR1176073A (en) | 1959-04-03 |
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