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GB804696A - Improvements in or relating to alloy transistors - Google Patents

Improvements in or relating to alloy transistors

Info

Publication number
GB804696A
GB804696A GB3480/56A GB348056A GB804696A GB 804696 A GB804696 A GB 804696A GB 3480/56 A GB3480/56 A GB 3480/56A GB 348056 A GB348056 A GB 348056A GB 804696 A GB804696 A GB 804696A
Authority
GB
United Kingdom
Prior art keywords
base electrode
electrodes
feb
silver
opposite sides
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB3480/56A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens and Halske AG
Siemens Corp
Original Assignee
Siemens and Halske AG
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens and Halske AG, Siemens Corp filed Critical Siemens and Halske AG
Publication of GB804696A publication Critical patent/GB804696A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/482Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of lead-in layers inseparably applied to the semiconductor body (electrodes)
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10DINORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00Subject matter not provided for in other groups of this subclass
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Bipolar Transistors (AREA)

Abstract

804,696. Transistors. SIEMENS & HALSKE A.G. Feb. 3, 1956 [Feb. 3, 1955], No. 3480/56. Class 37. In a transistor having alloyed emitter 2 and collector 3 electrodes on opposite sides of a semi-conductor wafer 1, the base electrode 4 consists of a solid noble metal, i.e. gold, silver, platinum, ruthenium, rhodium, palladium, osmium or iridium. In the example shown in Fig. 1, the base electrode is in the form of a ring surrounding the emitter, and may consist of a wire, or a stamping. Alternatively the base electrode may be combshaped, with the remaining electrodes arranged between the teeth, and it may contain a trace of acceptor or donor material to ensure good contact, or alloying elements such as silver or lead. Two base electrodes may be provided on opposite sides of the wafer.
GB3480/56A 1955-02-03 1956-02-03 Improvements in or relating to alloy transistors Expired GB804696A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE337951X 1955-02-03

Publications (1)

Publication Number Publication Date
GB804696A true GB804696A (en) 1958-11-19

Family

ID=6222027

Family Applications (1)

Application Number Title Priority Date Filing Date
GB3480/56A Expired GB804696A (en) 1955-02-03 1956-02-03 Improvements in or relating to alloy transistors

Country Status (3)

Country Link
CH (1) CH337951A (en)
FR (1) FR1186143A (en)
GB (1) GB804696A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1206087B (en) * 1960-07-20 1965-12-02 Rca Corp Method for manufacturing a semiconductor component with a disk-shaped semiconductor body

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE1206087B (en) * 1960-07-20 1965-12-02 Rca Corp Method for manufacturing a semiconductor component with a disk-shaped semiconductor body

Also Published As

Publication number Publication date
CH337951A (en) 1959-04-30
FR1186143A (en) 1959-08-14

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