[go: up one dir, main page]

GB789338A - Improvements in or relating to methods of applying an ohmic contact to semi-conductive bodies of a p-type conductive telluride of a bivalent metal - Google Patents

Improvements in or relating to methods of applying an ohmic contact to semi-conductive bodies of a p-type conductive telluride of a bivalent metal

Info

Publication number
GB789338A
GB789338A GB34019/55A GB3401955A GB789338A GB 789338 A GB789338 A GB 789338A GB 34019/55 A GB34019/55 A GB 34019/55A GB 3401955 A GB3401955 A GB 3401955A GB 789338 A GB789338 A GB 789338A
Authority
GB
United Kingdom
Prior art keywords
semi
ohmic contact
telluride
applying
bivalent metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB34019/55A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Philips Electrical Industries Ltd
Original Assignee
Philips Electrical Industries Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Electrical Industries Ltd filed Critical Philips Electrical Industries Ltd
Publication of GB789338A publication Critical patent/GB789338A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/44—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/38 - H01L21/428
    • H01L21/441—Deposition of conductive or insulating materials for electrodes
    • H01L21/445—Deposition of conductive or insulating materials for electrodes from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/34—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies not provided for in groups H01L21/18, H10D48/04 and H10D48/07, with or without impurities, e.g. doping materials
    • H01L21/40—Alloying of impurity materials, e.g. doping materials, electrode materials, with a semiconductor body
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/01—Manufacture or treatment
    • H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S228/00—Metal fusion bonding
    • Y10S228/903—Metal to nonmetal

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Electrodes Of Semiconductors (AREA)
  • Manufacture And Refinement Of Metals (AREA)

Abstract

789,338. Semi-conductor devices. PHILIPS ELECTRICAL INDUSTRIES, Ltd. Nov. 28, 1955 [Dec. 1, 1954], No. 34019/55. Class 37. An ohmic contact is applied to a P-type semiconductor body consisting of a telluride of a bivalent metal such as Zn, Cd, Hg, Sn and Pb, by applying tellurium locally to the body, and then melting the Te in a non-oxidizing atmosphere. The Te may be applied in the form of a powder or paste, or as a solid piece, or by evaporation. A layer of gold may be added to the Te. In the example described, a piece of Te is applied to a plate of Cd Te and melted at 500‹ C. for two minutes in an atmosphere of nitrogen with 10 per cent of hydrogen. The semi-conductor body may also comprise monovalent cations such as Cu, Ag or Au and the alkali metals.
GB34019/55A 1954-12-01 1955-11-28 Improvements in or relating to methods of applying an ohmic contact to semi-conductive bodies of a p-type conductive telluride of a bivalent metal Expired GB789338A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
NL339990X 1954-12-01

Publications (1)

Publication Number Publication Date
GB789338A true GB789338A (en) 1958-01-22

Family

ID=19784660

Family Applications (1)

Application Number Title Priority Date Filing Date
GB34019/55A Expired GB789338A (en) 1954-12-01 1955-11-28 Improvements in or relating to methods of applying an ohmic contact to semi-conductive bodies of a p-type conductive telluride of a bivalent metal

Country Status (7)

Country Link
US (1) US2865794A (en)
BE (1) BE543253A (en)
CH (1) CH339990A (en)
DE (1) DE1009311B (en)
FR (1) FR1136613A (en)
GB (1) GB789338A (en)
NL (2) NL88273C (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
NL224458A (en) * 1956-05-15
US3038241A (en) * 1958-12-22 1962-06-12 Sylvania Electric Prod Semiconductor device
US3080261A (en) * 1959-07-13 1963-03-05 Minnesota Mining & Mfg Bonding of lead based alloys to silicate based ceramic members
NL256979A (en) * 1959-10-19
US3232719A (en) * 1962-01-17 1966-02-01 Transitron Electronic Corp Thermoelectric bonding material
US3188594A (en) * 1962-01-25 1965-06-08 Gen Electric Thermally sensitive resistances
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3327137A (en) * 1964-04-10 1967-06-20 Energy Conversion Devices Inc Square wave generator employing symmetrical, junctionless threshold-semiconductor and capacitor in series circuit devoid of current limiting impedances
US3366518A (en) * 1964-07-01 1968-01-30 Ibm High sensitivity diodes
US4461785A (en) * 1982-11-19 1984-07-24 E. I. Du Pont De Nemours And Company Process for electrical terminal contact metallization

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US1751361A (en) * 1926-06-01 1930-03-18 Ruben Rectifier Corp Electric-current rectifier
BE495728A (en) * 1949-08-17 1900-01-01
BE506280A (en) * 1950-10-10
US2790736A (en) * 1955-01-31 1957-04-30 Rohm & Haas Methods of making coated paper products and the products obtained

Also Published As

Publication number Publication date
BE543253A (en)
CH339990A (en) 1959-07-31
FR1136613A (en) 1957-05-16
NL88273C (en)
DE1009311B (en) 1957-05-29
NL192839A (en)
US2865794A (en) 1958-12-23

Similar Documents

Publication Publication Date Title
GB789338A (en) Improvements in or relating to methods of applying an ohmic contact to semi-conductive bodies of a p-type conductive telluride of a bivalent metal
GB772583A (en) Improvements in or relating to semi-conductor devices
GB937438A (en) Method of applying contacts to a semiconductor body
GB838890A (en) Improvements in and relating to the manufacture of semiconductor devices
HK87679A (en) A process for attaching a lead member to a semi-conductor device and product thereof
GB1083172A (en) Semiconductive devices and methods of making them
GB1005352A (en) Improvements in or relating to thermoelectric devices
US2980833A (en) Point contact rectifier device
GB1273466A (en) Improvements relating to semiconductor devices
GB933212A (en) Improvements in or relating to semi-conductor devices
US2286237A (en) Copper powder
GB1076654A (en) Improvements in and relating to methods of applying ohmic contacts to silicon
GB973990A (en) Improvements in or relating to methods of providing contacts on semiconductor ceramic bodies of n-type oxidic material
GB1275153A (en) Semiconductor device
GB1341124A (en) Semiconductor device
GB776970A (en) Improvements in and relating to ceramic-to-metal bonds
GB1448510A (en) Electrically connecting a semiconductor body to a metal body capable of simultaneously serving as a heat sink and as an electrical contact having a low contact resistance
GB1168358A (en) A Process for the Production of a Semiconductor Unit
GB1282354A (en) Improvements in or relating to thermocouple joints
GB809080A (en) Methods of manufacturing selenium rectifiers
GB949227A (en) Semi-conductor contact
GB895652A (en) Improvements in or relating to semiconductor valves
GB930091A (en) Improvements relating to the production of semi-conductor devices
GB997184A (en) Improvements in or relating to methods of manufacturing semiconductor devices
GB1074283A (en) Improvements in and relating to semiconductor devices