GB769702A - Improvements in or relating to semiconductor devices - Google Patents
Improvements in or relating to semiconductor devicesInfo
- Publication number
- GB769702A GB769702A GB7887/54A GB788754A GB769702A GB 769702 A GB769702 A GB 769702A GB 7887/54 A GB7887/54 A GB 7887/54A GB 788754 A GB788754 A GB 788754A GB 769702 A GB769702 A GB 769702A
- Authority
- GB
- United Kingdom
- Prior art keywords
- probe
- semi
- conductor
- copper
- silicon
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000523 sample Substances 0.000 abstract 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 3
- MUBZPKHOEPUJKR-UHFFFAOYSA-N Oxalic acid Chemical compound OC(=O)C(O)=O MUBZPKHOEPUJKR-UHFFFAOYSA-N 0.000 abstract 3
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 abstract 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 3
- 229910052802 copper Inorganic materials 0.000 abstract 3
- 239000010949 copper Substances 0.000 abstract 3
- 229910052710 silicon Inorganic materials 0.000 abstract 3
- 239000010703 silicon Substances 0.000 abstract 3
- 229910052738 indium Inorganic materials 0.000 abstract 2
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 abstract 2
- 229910000906 Bronze Inorganic materials 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 238000007743 anodising Methods 0.000 abstract 1
- DLISVFCFLGSHAB-UHFFFAOYSA-N antimony arsenic Chemical compound [As].[Sb] DLISVFCFLGSHAB-UHFFFAOYSA-N 0.000 abstract 1
- 239000007864 aqueous solution Substances 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 239000010974 bronze Substances 0.000 abstract 1
- KUNSUQLRTQLHQQ-UHFFFAOYSA-N copper tin Chemical compound [Cu].[Sn] KUNSUQLRTQLHQQ-UHFFFAOYSA-N 0.000 abstract 1
- 239000013078 crystal Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- 239000012535 impurity Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
- 229910017604 nitric acid Inorganic materials 0.000 abstract 1
- 235000006408 oxalic acid Nutrition 0.000 abstract 1
- 230000001590 oxidative effect Effects 0.000 abstract 1
- 239000000243 solution Substances 0.000 abstract 1
- 229910052716 thallium Inorganic materials 0.000 abstract 1
- BKVIYDNLLOSFOA-UHFFFAOYSA-N thallium Chemical compound [Tl] BKVIYDNLLOSFOA-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/0223—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate
- H01L21/02233—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer
- H01L21/02236—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor
- H01L21/02238—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by oxidation, e.g. oxidation of the substrate of the semiconductor substrate or a semiconductor layer group IV semiconductor silicon in uncombined form, i.e. pure silicon
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/02227—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process
- H01L21/02258—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a process other than a deposition process formation by anodic treatment, e.g. anodic oxidation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Weting (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
BE536485D BE536485A (de) | 1954-03-18 | ||
GB7887/54A GB769702A (en) | 1954-03-18 | 1954-03-18 | Improvements in or relating to semiconductor devices |
DEN10355A DE1043513B (de) | 1954-03-18 | 1955-03-16 | Verfahren zur Herstellung von Halbleiteranordnungen mit Behandlung der Halbleiteroberflaeche und aufgesetzter Nadelelektrode |
FR1125496D FR1125496A (fr) | 1954-03-18 | 1955-03-18 | Redresseur à cristal |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB7887/54A GB769702A (en) | 1954-03-18 | 1954-03-18 | Improvements in or relating to semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
GB769702A true GB769702A (en) | 1957-03-13 |
Family
ID=9841708
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB7887/54A Expired GB769702A (en) | 1954-03-18 | 1954-03-18 | Improvements in or relating to semiconductor devices |
Country Status (4)
Country | Link |
---|---|
BE (1) | BE536485A (de) |
DE (1) | DE1043513B (de) |
FR (1) | FR1125496A (de) |
GB (1) | GB769702A (de) |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL70886C (de) * | 1943-08-11 | |||
US2469569A (en) * | 1945-03-02 | 1949-05-10 | Bell Telephone Labor Inc | Point contact negative resistance devices |
NL129688C (de) * | 1945-04-28 |
-
0
- BE BE536485D patent/BE536485A/xx unknown
-
1954
- 1954-03-18 GB GB7887/54A patent/GB769702A/en not_active Expired
-
1955
- 1955-03-16 DE DEN10355A patent/DE1043513B/de active Pending
- 1955-03-18 FR FR1125496D patent/FR1125496A/fr not_active Expired
Also Published As
Publication number | Publication date |
---|---|
FR1125496A (fr) | 1956-10-31 |
BE536485A (de) | |
DE1043513B (de) | 1958-11-13 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
JPS55133574A (en) | Insulated gate field effect transistor | |
GB1191890A (en) | Semiconductor Controlled Rectifier Devices | |
GB838890A (en) | Improvements in and relating to the manufacture of semiconductor devices | |
CH609814A5 (en) | Regenerative multilayer semiconductor switching device | |
GB1017355A (en) | Unipolar transistor | |
GB769702A (en) | Improvements in or relating to semiconductor devices | |
GB950849A (en) | A semi-conductor device | |
FR2106112A5 (en) | Gas detector - of changing electrical conductivity as function of gas concn | |
GB967746A (en) | Electrolytic capacitors | |
JPS562672A (en) | Schottky barrier diode | |
GB818464A (en) | Improvements in or relating to semiconductor devices | |
GB1076654A (en) | Improvements in and relating to methods of applying ohmic contacts to silicon | |
GB1250020A (en) | Semiconductor device | |
GB896616A (en) | Improvements in and relating to the manufacture of semiconductor devices | |
GB944603A (en) | Improvements relating to dielectric valves | |
GB964178A (en) | Improvements in or relating to methods of manufacturing semiconductor devices | |
GB808734A (en) | Unipolar "field-effect" transistor | |
GB829170A (en) | Method of bonding an element of semiconducting material to an electrode | |
GB870599A (en) | Improvements in or relating to semi-conductor crystal rectifiers and methods of manufacture thereof | |
JPS5636162A (en) | Charge transfer element | |
GB996174A (en) | Improvements in and relating to semi-conductor thermo-electric devices | |
JPS57197869A (en) | Semiconductor device | |
JPS5418286A (en) | Semiconductor device | |
GB953829A (en) | Improvements in or relating to methods of manufacturing semi-conductor devices | |
JPS52120688A (en) | Semi-conductor device |