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GB756178A - Improvements in or relating to the preparation of semi-conducting materials - Google Patents

Improvements in or relating to the preparation of semi-conducting materials

Info

Publication number
GB756178A
GB756178A GB202/54A GB20254A GB756178A GB 756178 A GB756178 A GB 756178A GB 202/54 A GB202/54 A GB 202/54A GB 20254 A GB20254 A GB 20254A GB 756178 A GB756178 A GB 756178A
Authority
GB
United Kingdom
Prior art keywords
semi
germanium
silicon
relating
preparation
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB202/54A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
General Electric Co PLC
Original Assignee
General Electric Co PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by General Electric Co PLC filed Critical General Electric Co PLC
Priority to GB202/54A priority Critical patent/GB756178A/en
Priority to FR1116614D priority patent/FR1116614A/en
Publication of GB756178A publication Critical patent/GB756178A/en
Expired legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B13/00Single-crystal growth by zone-melting; Refining by zone-melting
    • CCHEMISTRY; METALLURGY
    • C30CRYSTAL GROWTH
    • C30BSINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B29/00Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10Inorganic compounds or compositions
    • C30B29/52Alloys

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Silicon Compounds (AREA)

Abstract

Semi-conducting material is prepared by subjecting a solid body of germanium and silicon to an alternating fractional fusion process i.e. to a process in which a molten zone is caused to traverse the body, through a distance appreciably greater than the thickness of the zone, substantially an equal number of times in opposite directions. The initial solid body may be made by quenching a melt of silicon and germanium or by forming a compact mass from a mixture of the powdered elements. The mean composition of the body may be altered during the treatment by cutting-off one end of the body at a time when this end contains a relatively large concentration of one or other of the components or by adding one component to the molten zone during its passage through the body.
GB202/54A 1954-01-04 1954-01-04 Improvements in or relating to the preparation of semi-conducting materials Expired GB756178A (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
GB202/54A GB756178A (en) 1954-01-04 1954-01-04 Improvements in or relating to the preparation of semi-conducting materials
FR1116614D FR1116614A (en) 1954-01-04 1954-12-28 Semiconductor material

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB202/54A GB756178A (en) 1954-01-04 1954-01-04 Improvements in or relating to the preparation of semi-conducting materials

Publications (1)

Publication Number Publication Date
GB756178A true GB756178A (en) 1956-08-29

Family

ID=9700215

Family Applications (1)

Application Number Title Priority Date Filing Date
GB202/54A Expired GB756178A (en) 1954-01-04 1954-01-04 Improvements in or relating to the preparation of semi-conducting materials

Country Status (2)

Country Link
FR (1) FR1116614A (en)
GB (1) GB756178A (en)

Also Published As

Publication number Publication date
FR1116614A (en) 1956-05-09

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