GB752768A - Method of manufacturing selenium rectifier plates - Google Patents
Method of manufacturing selenium rectifier platesInfo
- Publication number
- GB752768A GB752768A GB28359/54A GB2835954A GB752768A GB 752768 A GB752768 A GB 752768A GB 28359/54 A GB28359/54 A GB 28359/54A GB 2835954 A GB2835954 A GB 2835954A GB 752768 A GB752768 A GB 752768A
- Authority
- GB
- United Kingdom
- Prior art keywords
- selenium
- cadmium
- counter electrode
- reaction layer
- stage
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 title abstract 7
- 229910052711 selenium Inorganic materials 0.000 title abstract 7
- 239000011669 selenium Substances 0.000 title abstract 7
- 238000004519 manufacturing process Methods 0.000 title abstract 2
- 238000006243 chemical reaction Methods 0.000 abstract 4
- 238000010438 heat treatment Methods 0.000 abstract 3
- 230000008018 melting Effects 0.000 abstract 3
- 238000002844 melting Methods 0.000 abstract 3
- 229910000925 Cd alloy Inorganic materials 0.000 abstract 2
- 229910052793 cadmium Inorganic materials 0.000 abstract 2
- BDOSMKKIYDKNTQ-UHFFFAOYSA-N cadmium atom Chemical compound [Cd] BDOSMKKIYDKNTQ-UHFFFAOYSA-N 0.000 abstract 2
- 239000000203 mixture Substances 0.000 abstract 2
- 238000005507 spraying Methods 0.000 abstract 2
- 229910045601 alloy Inorganic materials 0.000 abstract 1
- 239000000956 alloy Substances 0.000 abstract 1
- 229910052797 bismuth Inorganic materials 0.000 abstract 1
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 230000005496 eutectics Effects 0.000 abstract 1
- 229910052751 metal Inorganic materials 0.000 abstract 1
- 239000002184 metal Substances 0.000 abstract 1
- 150000002739 metals Chemical class 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/048—Treatment of the complete device, e.g. by electroforming to form a barrier
- H10D48/049—Ageing
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/047—Application of an electrode to the exposed surface of the selenium or tellurium after the selenium or tellurium has been applied to foundation plates
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/01—Manufacture or treatment
- H10D48/04—Manufacture or treatment of devices having bodies comprising selenium or tellurium in uncombined form
- H10D48/048—Treatment of the complete device, e.g. by electroforming to form a barrier
Landscapes
- Battery Electrode And Active Subsutance (AREA)
Abstract
752,768. Coating with metals; alloys. STANDARD TELEPHONES & CABLES, Ltd. Oct. 1, 1954 [Oct. 10, 1953], No. 28359/54. Classes 82(1) and 82(2). [Also in Group XXXVI] A method of manufacturing selenium rectifier plates comprises depositing (e.g. spraying) a cadmium alloy counter electrode on the selenium layer and then heat treating the plates at a temperature (e.g. 210-210C.) below the melting point of selenium (217C.). The invention is directed towards limiting the thickness of the reaction layer between the selenium and the counter electrode. The cadmium alloy used must have a melting point above 217 C. and up to 266C. and the following per cent by weight compositions (with melting points) are quoted : (i) 22 /tin-62/cadmium-16/bismuth (220C.); (ii) 82À5/lead-17À5/cadmium (248C.); (iii) 17À4/zinc-82À6/cadmium (266C.); (ii) and (iii) are eutectic compositions. The conversion of the selenium into the conductive state may be effected using a two-stage heating process with the first stage at 130C., and followed by spraying on the counter electrode, and the second stage between 200 and 210C. which thus also accomplishes the reaction layer heat treatment required. If desired the selenium may be fully converted before the reaction layer heat treatment.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE752768X | 1953-10-10 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB752768A true GB752768A (en) | 1956-07-11 |
Family
ID=6655166
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB28359/54A Expired GB752768A (en) | 1953-10-10 | 1954-10-01 | Method of manufacturing selenium rectifier plates |
Country Status (4)
| Country | Link |
|---|---|
| BE (1) | BE532452A (en) |
| CH (1) | CH334112A (en) |
| GB (1) | GB752768A (en) |
| NL (1) | NL90941C (en) |
-
1954
- 1954-10-01 GB GB28359/54A patent/GB752768A/en not_active Expired
- 1954-10-05 NL NL191304A patent/NL90941C/nl active
- 1954-10-08 CH CH334112D patent/CH334112A/en unknown
- 1954-10-11 BE BE532452D patent/BE532452A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| BE532452A (en) | 1958-02-14 |
| NL90941C (en) | 1959-05-15 |
| CH334112A (en) | 1958-11-15 |
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