GB2413008B - GaN-based light-emitting diode structure - Google Patents

GaN-based light-emitting diode structure

Info

Publication number: GB2413008B
Authority: GB; United Kingdom
Prior art keywords: gan; emitting diode; based light; diode structure; light
Prior art date: 2004-04-08
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

GB0419630A

Other versions

Inventor

Schang-Jing Hon

Mu-Jen Lai

Chi-Feng Chan

Jenn-Bin Huang

Chen-Fu Chang

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Supernova Optoelectronics Corp

Original Assignee

Supernova Optoelectronics Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2004-04-08

Filing date

2004-09-03

Publication date

2006-06-28

2004-09-03 Application filed by Supernova Optoelectronics Corp filed Critical Supernova Optoelectronics Corp

2004-10-06 Publication of GB0419630D0 publication Critical patent/GB0419630D0/en

2005-10-12 Publication of GB2413008A publication Critical patent/GB2413008A/en

2006-06-28 Publication of GB2413008B publication Critical patent/GB2413008B/en

2007-01-15 Application granted granted Critical

2007-01-15 Publication of GB2413008A8 publication Critical patent/GB2413008A8/en

2007-01-15 Publication of GB2413008B8 publication Critical patent/GB2413008B8/en

2024-09-03 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
- H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
- H10H20/80—Constructional details
- H10H20/81—Bodies
- H10H20/819—Bodies characterised by their shape, e.g. curved or truncated substrates
- H10H20/82—Roughened surfaces, e.g. at the interface between epitaxial layers

GB0419630A 2004-04-08 2004-09-03 GaN-based light-emitting diode structure Expired - Fee Related GB2413008B8 (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
CNU2004200364438U CN2760762Y (en)	2004-04-08	2004-04-08	Gallium nitride-based light-emitting diode structure

Publications (5)

Publication Number	Publication Date
GB0419630D0 GB0419630D0 (en)	2004-10-06
GB2413008A GB2413008A (en)	2005-10-12
GB2413008B true GB2413008B (en)	2006-06-28
GB2413008A8 GB2413008A8 (en)	2007-01-15
GB2413008B8 GB2413008B8 (en)	2007-01-15

Family

ID=34171197

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB0419630A Expired - Fee Related GB2413008B8 (en)	2004-04-08	2004-09-03	GaN-based light-emitting diode structure

Country Status (4)

Country	Link
CN (1)	CN2760762Y (en)
DE (1)	DE202004012665U1 (en)
FR (1)	FR2868878B3 (en)
GB (1)	GB2413008B8 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US8513688B2 (en)	2009-12-02	2013-08-20	Walsin Lihwa Corporation	Method for enhancing electrical injection efficiency and light extraction efficiency of light-emitting devices

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
TWI318013B (en)	2006-09-05	2009-12-01	Epistar Corp	A light emitting device and the manufacture method thereof
CN101150156B (en) *	2006-09-22	2012-05-30	晶元光电股份有限公司	Light emitting element and manufacturing method thereof
JP2008182069A (en) *	2007-01-25	2008-08-07	Toshiba Corp	Semiconductor light emitting device
CN101685842B (en) *	2008-09-25	2012-12-05	晶元光电股份有限公司	Optoelectronic semiconductor device
CN102117871A (en) *	2009-12-31	2011-07-06	华新丽华股份有限公司	Method for increasing electric injection efficiency and light extraction efficiency of light-emitting device
TW201349569A (en) *	2012-05-28	2013-12-01	Genesis Photonics Inc	Light-emitting element and manufacturing method thereof
CN102956781B (en) *	2011-08-31	2015-03-11	新世纪光电股份有限公司	Light emitting element and manufacturing method thereof
DE102012106998A1 (en) *	2012-07-31	2014-02-06	Osram Opto Semiconductors Gmbh	Reflective contact layer system for an optoelectronic component and method for its production
CN103594582B (en) *	2013-10-26	2016-04-27	溧阳市东大技术转移中心有限公司	A kind of vertical type light emitting diode of high light-emitting efficiency
CN104851947B (en) *	2015-04-21	2017-11-14	北京邮电大学	A kind of LED chip with surface roughening translucent construction and preparation method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5789768A (en) *	1997-06-23	1998-08-04	Epistar Corporation	Light emitting diode having transparent conductive oxide formed on the contact layer
US5869849A (en) *	1995-10-05	1999-02-09	Industry Technology Research Institute	Light-emitting diodes with high illumination
WO2000077863A1 (en) *	1999-06-14	2000-12-21	Osram Opto Semiconductors Gmbh & Co. Ohg	Ga(In, Al) P COMPOUND-BASED LIGHT-EMITTING SEMICONDUCTOR DIODE WITH A ZnO WINDOW LAYER
US6207972B1 (en) *	1999-01-12	2001-03-27	Super Epitaxial Products, Inc.	Light emitting diode with transparent window layer

2004
- 2004-04-08 CN CNU2004200364438U patent/CN2760762Y/en not_active Expired - Lifetime
- 2004-08-12 DE DE202004012665U patent/DE202004012665U1/en not_active Expired - Lifetime
- 2004-09-03 GB GB0419630A patent/GB2413008B8/en not_active Expired - Fee Related
- 2004-09-14 FR FR0452048A patent/FR2868878B3/en not_active Expired - Lifetime

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US5869849A (en) *	1995-10-05	1999-02-09	Industry Technology Research Institute	Light-emitting diodes with high illumination
US5789768A (en) *	1997-06-23	1998-08-04	Epistar Corporation	Light emitting diode having transparent conductive oxide formed on the contact layer
US6207972B1 (en) *	1999-01-12	2001-03-27	Super Epitaxial Products, Inc.	Light emitting diode with transparent window layer
WO2000077863A1 (en) *	1999-06-14	2000-12-21	Osram Opto Semiconductors Gmbh & Co. Ohg	Ga(In, Al) P COMPOUND-BASED LIGHT-EMITTING SEMICONDUCTOR DIODE WITH A ZnO WINDOW LAYER

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
Improvement of InGaN-GaN light-emitting diodes with surface-textured indium-tin-oxide transparent ohmic contactsShyi-Ming Pan; Ru-Chin Tu; Yu-Mei Fan; Yeh, R.-C.; Jung-Tsung Hsu;Photonics Technology Letters, IEEE , Volume: 15 , Issue: 5 , May 2003 Pages: 649 - 651 *

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
US8513688B2 (en)	2009-12-02	2013-08-20	Walsin Lihwa Corporation	Method for enhancing electrical injection efficiency and light extraction efficiency of light-emitting devices

Also Published As

Publication number	Publication date
GB2413008A (en)	2005-10-12
DE202004012665U1 (en)	2005-02-03
GB0419630D0 (en)	2004-10-06
FR2868878A3 (en)	2005-10-14
GB2413008A8 (en)	2007-01-15
FR2868878B3 (en)	2006-03-24
CN2760762Y (en)	2006-02-22
GB2413008B8 (en)	2007-01-15

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HK1104673A1 (en)	2008-01-18	Organic light emitting diode
TWI371867B (en)	2012-09-01	Semiconductor light-emitting device
SG128595A1 (en)	2007-01-30	Light-emitting device
TW560697U (en)	2003-11-01	Surface-mounting type light-emitting diode structure
HK1073181A1 (en)	2005-09-23	Light-amitting diode lamp
EP1908123B8 (en)	2015-09-23	Light-emitting semiconductor diode having high light-extraction efficiency
TWM258383U (en)	2005-03-01	Waterproof LED light-emitting device
GB0422913D0 (en)	2004-11-17	Electroluminescent devices
HK1100495A1 (en)	2007-09-21	Light-emitting diode arrangement
EP1787338A4 (en)	2010-06-02	Light-emitting device
GB2413008B8 (en)	2007-01-15	GaN-based light-emitting diode structure
TWI318802B (en)	2009-12-21	Semiconductor light-emitting diode
TW560703U (en)	2003-11-01	Organic light-emitting diode
GB2426376B (en)	2008-12-03	Light-emitting device
GB0524013D0 (en)	2006-01-04	A semiconductor light-emitting device
GB0411572D0 (en)	2004-06-23	Light-emitting device
EP1776723A4 (en)	2009-08-05	Semiconductor light emitting diode
GB0508556D0 (en)	2005-06-01	A semiconductor light-emitting device

Legal Events

Date	Code	Title	Description
2006-12-06	711B	Application made for correction of error (sect. 117/77)
2007-02-07	711G	Correction allowed (sect. 117/1977)
2014-11-05	732E	Amendments to the register in respect of changes of name or changes affecting rights (sect. 32/1977)	Free format text: REGISTERED BETWEEN 20141009 AND 20141015
2024-05-29	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 20230903

GB2413008B - GaN-based light-emitting diode structure - Google Patents

Info

Links

Classifications

Applications Claiming Priority (1)

Publications (5)

Family

ID=34171197

Family Applications (1)

Country Status (4)

Cited By (1)

Families Citing this family (10)

Citations (4)

Patent Citations (4)

Non-Patent Citations (1)

Cited By (1)

Also Published As

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