CN101685842B - Optoelectronic semiconductor device - Google Patents

Abstract

An optoelectronic semiconductor device according to an embodiment of the present invention includes an energy conversion system for converting between optical energy and electrical energy, the energy conversion system having a first side; the contact layer is formed on the first side of the energy conversion system and comprises an outer boundary and at least one ohmic contact region, wherein ohmic contact can be formed between the ohmic contact region and the energy conversion system; and two or more discrete regions integrated with the contact layer to form at least one pattern on the energy conversion system.

Description

Optoelectronic semiconductor device

technical field

The present invention relates to an optoelectronic semiconductor device, in particular to an optoelectronic semiconductor device having a contact layer and a discontinuous region, and a pattern layout related to the discontinuous region.

Background technique

A known structure of a light-emitting diode includes a growth substrate, an n-type semiconductor layer, a p-type semiconductor layer, and a light-emitting layer between the two semiconductor layers. A reflective layer for reflecting light from the light-emitting layer is optionally formed in the structure. In order to improve at least one of the optical, electrical, and mechanical properties of the light-emitting diode, a properly selected material will be used to replace the growth substrate as a carrier for carrying other structures except the growth substrate, for example: metal or silicon can be used In place of sapphire substrates grown on nitrides. The growth substrate can be removed by etching, grinding, or laser removal. However, it is also possible that the growth substrate is fully or only partially retained and bound to the carrier. In addition, light-transmitting oxides can also be integrated into the LED structure to improve current spreading performance.

The Taiwan Patent No. I237903 of the applicant of this case discloses a light-emitting element 100 with high luminous efficiency. As shown in FIG. 1, the structure of the light-emitting element 100 includes a sapphire substrate 110, a nitride buffer layer 120, an n-type nitride semiconductor stack 130, a nitride multiple quantum well light-emitting layer 140, a p-type nitride semiconductor stack 150, and Oxide transparent conductive layer 160 . In addition, a hexagonal pyramid hole structure 1501 is formed on the surface of the p-type nitride semiconductor stack 150 facing the oxide transparent conductive layer 160 . The inner surface of the hexagonal pyramid hole structure 1501 is more likely to form an ohmic contact with an oxide transparent conductive layer 160 such as indium tin oxide (ITO), cadmium tin oxide, antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide. . Therefore, the forward voltage of the light emitting device 100 can be maintained at a low level, and the light extraction efficiency can also be improved through the hexagonal pyramid hole structure 1501 .

ITO can be formed on the hexagonal pyramid hole structure 1501, the semiconductor layer or both by electron beam evaporation or sputtering. The optical, electrical properties, or both of the ITO layers formed by different manufacturing methods may also be different. For relevant documents, please refer to the No. 096111705 Taiwan Patent Application of the applicant in this case, and quote it as the present application part of the case. Under the scanning electron microscope (Scanning Electron Microscope; SEM), the ITO particles 1601 formed by the electron beam evaporation method do not completely fill the six-hole cone holes 1501, but present many gaps between the ITO particles, as shown in the figure 2. These voids may make the light confined therein unable to leave the light-emitting element, and gradually absorbed by the surrounding ITO. Or because there is a medium with a refractive index smaller than ITO in these gaps, such as air, the light entering ITO will encounter total reflection at the material boundary and cannot leave the ITO layer, and will be gradually absorbed by ITO.

In the article "Nitride-based near-ultraviolet LEDs with an ITO transparent contact" proposed by C.H.Kuo et al. in Materials Science and Engineering B in 2004, the relationship between the transmittance of ITO and the wavelength was studied. It found that when the wavelength is lower than about 420nm, the transmittance of ITO tends to drop sharply, and may even be lower than 70% at 350nm. For the blue light band, ITO has a transmittance higher than 80%, but the transmittance in the near ultraviolet or ultraviolet band is not ideal.

Therefore, transparent oxides such as ITO are commonly used materials for semiconductor light-emitting devices, and there is still much room for improvement in the optical and electrical performance of the devices.

Contents of the invention

An optoelectronic semiconductor device according to an embodiment of the present invention includes an energy conversion system capable of converting light energy to electrical energy, wherein the energy conversion system includes a first contact area and a second contact area; a first material area a block formed on the first contact region of the energy conversion system and transparent to a specific wavelength of light; and a second material block formed on the second contact region of the energy conversion system; wherein the first The resistance between the material block and the first contact region is smaller than the resistance between the second material block and the second contact region.

Other preferred embodiments of the optoelectronic semiconductor device described above are as follows: the first contact region in the optoelectronic semiconductor device includes a hexagonal pyramid hole. The first contact region in the optoelectronic semiconductor device includes a surface forming an ohmic contact with the first material block. The first material block and the second material block in the optoelectronic semiconductor device are formed into a patterned configuration. The second contact region in the optoelectronic semiconductor device includes an insulating material.

An optoelectronic semiconductor device according to another embodiment of the present invention includes an energy conversion system for converting light energy and electrical energy, the energy conversion system has a first side; a contact layer is formed on the energy conversion system and comprising an outer boundary and at least one ohmic contact region, wherein an ohmic contact can be formed between the ohmic contact region and the energy conversion system; and two or more discontinuous regions integrated with the contact layer to form at least one pattern on the energy conversion system.

Other preferred embodiments of the above-mentioned optoelectronic semiconductor device are as follows:

A discontinuity of an optoelectronic semiconductor device includes a discontinuity in at least one of geometric, material, physical, and chemical properties. Alternatively, a discontinuity comprises a structure that exhibits a recognizable, recurring feature in either direction on a surface. The type of the repetitive feature includes at least one of constant periodicity, variable periodicity, and quasiperodicity. Alternatively, the discontinuity includes an irregular surface structure. Alternatively, the size of the discontinuity is less than or equal to a current spreading distance.

The contact layer in the optoelectronic semiconductor device comprises indium tin oxide.

The ohmic contact area in the optoelectronic semiconductor device includes at least one recessed space, the geometry of which includes at least one of pyramid, cone, and frustum. Alternatively, the ohmic contact region includes at least one slope and a plane, wherein the slope can form better ohmic contact with the energy conversion system than the plane. Alternatively, the inclined plane can form ohmic contact with the energy conversion system, and the flat surface cannot form ohmic contact with the energy conversion system. Alternatively, the sloped surface can form an ohmic contact with the energy conversion system, and the flat surface can form a non-ohmic or Schottky contact with the energy conversion system.

Ohmic contact regions closer to the outer boundaries in optoelectronic semiconductor devices have larger contact areas. Alternatively, the ohmic contact region is formed on an outer surface of the energy conversion system.

At least part of the discontinuity in the optoelectronic semiconductor device has no ohmic contact with the energy conversion system. Alternatively, at least one of the discontinuities in the optoelectronic semiconductor device includes a filler.

The energy conversion system in an optoelectronic semiconductor device includes a transition layer. Alternatively, the optoelectronic semiconductor device further includes an electrical contact close to the energy conversion system and in electrical contact with the contact layer.

Description of drawings

Figure 1 shows a light-emitting element with high luminous efficiency disclosed in No. I237903 Taiwan Patent of the applicant of this case;

Figure 2 is a photo showing the ITO particles formed by electron beam evaporation in the six-hole cone hole under the scanning electron microscope (Scanning Electron Microscope; SEM);

3 is a schematic diagram showing an optoelectronic semiconductor device according to an embodiment of the present invention;

4 is a schematic diagram showing an optoelectronic semiconductor device according to an embodiment of the present invention;

5(a)-(c) are schematic diagrams showing a partial structure of an optoelectronic semiconductor device according to an embodiment of the present invention;

6(a)-(c) are schematic diagrams showing a partial structure of an optoelectronic semiconductor device according to an embodiment of the present invention;

7(a)-(c) are schematic diagrams showing a partial structure of an optoelectronic semiconductor device according to an embodiment of the present invention;

8(a)-(c) are schematic diagrams showing a partial structure of an optoelectronic semiconductor device according to an embodiment of the present invention;

9(a), (b) are schematic diagrams showing a partial structure of an optoelectronic semiconductor device according to an embodiment of the present invention;

10(a)-(c) are schematic diagrams showing a partial structure of an optoelectronic semiconductor device according to an embodiment of the present invention;

11(a), (b) are top views showing a partial structure of an optoelectronic semiconductor device according to an embodiment of the present invention;

12(a), (b) are top views showing a partial structure of an optoelectronic semiconductor device according to an embodiment of the present invention;

13 is a top view showing a contact layer of an optoelectronic semiconductor device according to an embodiment of the present invention;

14 is a top view showing a contact layer of an optoelectronic semiconductor device according to an embodiment of the present invention; and

15 is a top view showing a contact layer of an optoelectronic semiconductor device according to an embodiment of the present invention.

Explanation of reference signs

10 optoelectronic semiconductor device 163 outer boundary

11 base plate 164 opening

12 Transition layer 165 Current blocking area

13 The first electrical layer 17 The second electrical contact

14 conversion part 171 root

15 second electrical layer 172 branch

151 ohm contact area 173 end

152 Insulation area 18 First electrical contact

153 platform 100 light emitting element

16 Contact layer 110 Sapphire substrate

161 Discontinuous region 120 Nitride buffer layer

1611 discontinuous region 130 n-type nitride semiconductor stack

1612 discontinuous region 140 nitride multiple quantum well light-emitting layer

1613 discontinuous region 150 p-type nitride semiconductor stack

1614 Discontinuous zone 1501 Hexagonal cone cavity structure

1615 discontinuous region 160 oxide transparent conductive layer

1616 Discontinuous zone 1601 ITO particles

162 filler

Detailed ways

Embodiments of the present invention are described below with illustrations.

The optoelectronic semiconductor device 10 shown in FIG. 3 comprises a semiconductor system formed on a substrate 11 . A semiconductor system includes a semiconductor component, device, product, circuit, or application that can perform or induce photoelectric energy conversion. Specifically, semiconductor systems include light-emitting diodes (Light-Emitting Diode; LED), laser diodes (Laser Diode; LD), solar cells (Solar Cell), liquid crystal displays (Liquid Crystal Display), organic light-emitting diodes (Organic Light-Emitting Diode) ) at least one of. The term "semiconductor system" in this specification does not limit all subsystems or units in the system to be made of semiconductor materials, and other non-semiconductor materials, such as: metals, oxides, insulators, etc., can be selectively integrated in this semiconductor in the system.

In an embodiment of the present invention, the semiconductor system at least includes a first electrical layer 13 , a conversion portion 14 , and a second electrical layer 15 . At least two parts of the first electrical layer 13 and a second electrical layer 15 have different electrical properties, polarities or dopants, or are used to provide electrons and holes respectively in a single layer or multiple layers ( "Multilayer" refers to two or more layers, the same below.) If the first electrical layer 13 and a second electrical layer 15 are made of semiconductor materials, the electrical selection can be p-type or n-type , and a combination of at least any two of type i. The conversion portion 14 is located between the first electrical layer 13 and the second electrical layer 15 , and is a region where electrical energy and light energy may be converted or induced to be converted. Those that convert electrical energy or induce light energy such as light-emitting diodes, liquid crystal displays, and organic light-emitting diodes; those that convert light energy or induce electrical energy such as solar cells and photodiodes.

In the case of light-emitting diodes, the emission spectrum of the converted light can be adjusted by changing the physical or chemical configuration of one or more layers in the semiconductor system. Commonly used materials include aluminum gallium indium phosphide (AlGaInP) series, aluminum gallium indium nitride (AlGaInN) series, zinc oxide (ZnO) series, and the like. The structure of the conversion part 14 is such as: single heterostructure (single heterostructure; SH), double heterostructure (double heterostructure; DH), double-side double heterostructure (double-side double heterostructure; DDH), or multilayer quantum well ( multi-quantum well; MQW). Furthermore, adjusting the logarithm of the quantum wells can also change the emission wavelength.

The substrate 11 is used to grow or carry semiconductor systems, applicable materials include but not limited to germanium (Ge), gallium arsenide (GaAs), indium phosphorus (InP), sapphire (Sapphire), silicon carbide (SiC), silicon ( Si), lithium aluminate (LiAlO ₂ ), zinc oxide (ZnO), gallium nitride (GaN), aluminum nitride (AlN), glass, composite materials (Composite), diamond, CVD diamond, and diamond-like carbon (Diamond-like carbon (Diamond -LikeCarbon; DLC) and more.

A transition layer 12 may optionally be included between the substrate 11 and the semiconductor system. The transition layer 12 is interposed between the two material systems, so as to "transition" the material system of the substrate to the material system of the semiconductor system. For the structure of the light emitting diode, on the one hand, the transition layer 12 such as a buffer layer (Buffer Layer) is a material layer used to reduce the lattice mismatch between the two materials. On the other hand, the transition layer 12 can also be a single layer, multi-layer or structure used to combine two materials or two separate structures, and its optional materials are such as: organic materials, inorganic materials, metals, and semiconductors; Optional structures such as: reflective layer, thermal conductive layer, conductive layer, ohmic contact layer, anti-deformation layer, stress release layer, stress adjustment layer, bonding layer, wavelength conversion layer, and mechanical fixing structure, etc.

A contact layer 16 can be optionally formed on the second electrical layer 15 . The contact layer 16 is disposed on a side of the second electrical layer 15 away from the converting portion 14 . Specifically, the contact layer 16 may be an optical layer, an electrical layer, or a combination of both. The optical layer may modify electromagnetic radiation or light coming from or entering the conversion portion 14 . "Change" as used herein refers to changing at least one optical characteristic of electromagnetic radiation or light, the aforementioned characteristics including but not limited to frequency, wavelength, intensity, flux, efficiency, color temperature, color rendering (rendering index), light field (light field) field), and angle of view (angle of view). The electrical layer may cause the value, density, distribution, or tendency to change of at least one of voltage, resistance, current, and capacitance between any set of opposite sides of the contact layer 16 . The constituent materials of the contact layer 16 include oxides, conductive oxides, transparent oxides, oxides with a transmittance of 50% or more, metals, relatively transparent metals, metals with a transmittance of 50% or more, organic substances, and inorganic substances. , at least one of phosphors, phosphors, ceramics, semiconductors, doped semiconductors, and undoped semiconductors. In some applications, the material of the contact layer 16 is at least one of indium tin oxide, cadmium tin oxide, antimony tin oxide, indium zinc oxide, zinc aluminum oxide, and zinc tin oxide. If it is a relatively light-transmitting metal, its thickness is about 0.005 μm to 0.6 μm, or 0.005 μm to 0.5 μm, or 0.005 μm to 0.4 μm, or 0.005 μm to 0.3 μm, or 0.005 μm to 0.2 μm, or 0.2 μm to 0.5 μm μm, or 0.3 μm to 0.5 μm, or 0.4 μm to 0.5 μm, or 0.2 μm to 0.4 μm, or 0.2 μm to 0.3 μm.

In some cases, an ohmic contact region 151 may be formed on the second electrical layer 15 . If the second electrical layer 15 and the contact layer 16 are in direct or indirect contact via the ohmic contact region 151, an ohmic contact may be formed therebetween, or the driving voltage (driving voltage), threshold voltage (threshold voltage) and forward direction of the optoelectronic semiconductor device 10 may be At least one of the forward voltages drops. The possible shape of the ohmic contact region 151 is concave or convex. The depression is illustrated as the ohmic contact area 151 of FIG. 3 ; the protrusion is illustrated as the ohmic contact area 151 of FIG. 4 . The possible geometric shapes of the concave space are pyramids, cones, frustums, cylinders, cylinders, hemispheres, irregular bodies or any combination thereof. Possible geometries for the protrusions are pyramids, cones, frustums, cylinders, cylinders, hemispheres, irregulars or any combination thereof. In addition, the ohmic contact region 151 is formed of a single or similar protrusion or depression as shown in the figure, but it is not excluded that it may also be formed of a combination of protrusions and depressions. In a specific embodiment, the protrusions, the recessed spaces, or a combination thereof are hexagonal pyramids. At least a portion of the contact layer 16 in contact with the ohmic contact region 151 forms an ohmic contact. The specific lattice orientation or surface energy state of the inclined planes on the pyramid is one of the possible reasons for the ohmic contact or lower potential energy barrier. On the other hand, poor ohmic contact, non-ohmic contact, or Schottky (Schottky) contact may be formed between the portion of the surface of the second electrical layer 15 where the ohmic contact region 151 is not formed and the contact layer 16, but this portion The possibility of forming an ohmic contact with the contact layer 16 is not excluded. For the possible formation background of the ohmic contact region 151 and some implementation methods, please refer to the Taiwan Patent No. I237903 of the applicant of the present application, which is incorporated as a part of the present application.

In addition to being a continuous single or multiple layers, the contact layer 16 may be discontinuous or patterned as a single or multiple layers. For relevant patents, please refer to the No. 096111705 Taiwan patent application of the applicant of this case, and quote it as a part of this application. "Discontinuity" refers to a discontinuity in at least one of geometric, material, physical, and chemical properties. Geometric discontinuity refers to a discontinuity in at least one of length, thickness, depth, width, period, external shape, and internal structure. A material discontinuity refers to a discontinuity in at least one of density, composition, concentration, and manufacturing method. A physical property discontinuity refers to a discontinuity in at least one of electrical, optical, thermal, and mechanical properties. A discontinuity in chemical properties refers to a discontinuity of at least one of dopant, activity, acidity, and alkalinity. As shown in FIGS. 3 and 4 , a discontinuous region 161 is formed on the contact layer 16 . If the material is discontinuous, the material in the discontinuous region 161 may not form an ohmic contact with the second electrical layer 15 , the ohmic contact region 151 or both. The optical properties of the discontinuity 161 may also differ from those of the contact layer 16 . Optical properties such as transmittance, refraction, and reflectance. The energy flow or light intensity leaving or entering the conversion portion 14 can be enhanced by selecting an appropriate material for the discontinuity 161 . For example, the discontinuity region 161 is an air gap through which light from the converting portion 14 can leave the optoelectronic semiconductor device 10 without being absorbed by the contact layer 16 . If at least one of the first electrical layer 13, the conversion portion 14, and the second electrical layer 15 is formed with a regular pattern structure, an irregular pattern structure, a roughened structure, a photonic crystal, or any combination thereof, the Energy flow or light intensity into and out of the continuum 161 . As shown in FIG. 3 and FIG. 4, if the material of the second electrical layer 15 in contact with the discontinuous region 161 has a relatively large refractive index, the ohmic contact region 151 may destroy the total reflection of light at this refractive index interface and cause The light extraction of the discontinuity 161 is improved.

If the optoelectronic semiconductor device 10 has the structure shown in Figure 3 or Figure 4, a second electrical contact 17 can be selectively formed on the second electrical layer 15 or the contact layer 16, and a A first electrical contact 18 can be selectively formed on the top. The electrical contact is a single-layer or multi-layer structure, and is an interface for electrically connecting the optoelectronic semiconductor device 10 with external circuits. The electrical contact can be connected to the external circuit through wiring, or directly fixed on the external circuit.

In addition, electrical contacts can also be arranged on other sides of the optoelectronic semiconductor device 10 . For example, the first electrical contact 18 may be disposed under the first electrical layer 13, the transition layer 12, or the substrate 11, or disposed on the side of at least one of the first electrical layer, the transition layer 12, and the substrate 11. . In other words, the first electrical contact 18 and the second electrical contact 17 are respectively located on surfaces facing each other or perpendicular to each other. In yet another embodiment, the second electrical contact 17 may be disposed on the side of the second electrical layer. In yet another embodiment, the first electrical contact 17, the second electrical contact 18, or both can be disposed on the first electrical layer, the transition layer 12, or the substrate through through holes, insulating materials, or both. 11 side or surface.

Several embodiments of electrical contacts, ohmic contact regions and discontinuous regions are introduced below. Although the illustration takes the second electrical layer 15 and the second electrical contact 17 as an example, it does not exclude that the following embodiments can also be applied to the first electrical layer 13 and the first electrical contact 18, or other types of Optoelectronic semiconductor devices.

As shown in FIG. 5 , the contact layer 16 is formed on the second electrical layer 15 , the second electrical contact 17 is formed on the contact layer 16 , and the discontinuous area 161 is distributed around the second electrical contact 17 . Its distribution method should make the current from the electrical contact 17 flow laterally to the outer edge of the contact layer 16 as much as possible, or make the current density difference between the lower part of the electrical contact 17 and the outer edge of the contact layer 16 less than 60% %, 50%, 40%, 30%, 20%, or 10%. For example, the current density below the electrical contact is xA/cm ² , the current density at the outer edge of the contact layer 16 is yA/cm ² , and the percentage difference in current density is |xy|/(the larger of x and y)% .

FIG. 5( a ) discloses two types of discontinuous regions 161 , and these two types can coexist or exist independently. The contact layer 16 on the right side of the second electrical contact 17 does not overlap the discontinuous region 161; the contact layer 16 on the left side of the second electrical contact 17 overlaps the discontinuous region 161, and the contact layer 16 overlaps the second electrical layer There is a third substance or structure in 15. Specifically, the discontinuous region 161 or the third substance or structure is an insulating material such as air or oxide, or is a poor conductor relative to the contact layer, or a Bragg reflector (Bragg reflector), and an anti-reflection (anti- reflection) layer. In addition, the refractive index of the third substance may be between the second electrical layer 15 and the contact layer 16 . At least one of the contact layer 16 , the second electrical layer 15 , the conversion portion 14 , the first electrical layer 13 , the transition layer 12 , and the substrate 11 below the second electrical contact 17 can optionally form an insulating region 152 In order to disperse the current from the second electrical contact 17 outward. However, the position of the insulating region 152 in the figure is only an example, and is not intended to limit the implementation of the present invention. The contact layer 16 below the second electrical contact 17, the insulating region 152, or both are approximately equal to or slightly larger than the size of the second electrical contact 17, wherein the size of the contact layer 16 below the second electrical contact 17 refers to The diameter of the smallest virtual circle surrounded by the discontinuous area 161 around or below the second electrical contact 17 . As shown in FIG. 5( b ), the second electrical contact 17 is buried in the contact layer 16 . As shown in Figure 5(c), the second electrical contact 17 is embedded in the contact layer 16, and any surface of the electrical contact 17 in contact with the contact layer 16 is formed into a regular surface structure, an irregular surface structure, Or both to increase the contact area between the electrical contact 17 and the contact layer 16 . For example, the contact surface 171 between the electrical contact 17 and the contact layer 16 is formed as a rough surface to increase the contact area between them. A larger contact area may increase the structural stability of the electrical contact 17 or allow more current to pass through.

FIG. 6( a ) to FIG. 6( c ) disclose another configuration of electrical contacts, and for the configuration or implementation of the discontinuous region 161 , please refer to the related description of FIG. 5 . The second electrical contact 17 is directly formed on the second electrical layer 15 , in other words, there is no contact layer 16 between the electrical contact 17 and the second electrical layer 15 . The electrical contact 17 is formed into a regular surface structure, an irregular surface structure, or both on any surface that is in contact with the contact layer 16, the second electrical layer 15, or both to increase the contact between the electrical contact 17 and other surfaces. contact area between parts. A larger contact area may increase the structural stability of the electrical contact 17 or allow more current to pass through. An insulating region 152 can be further formed under the second electrical contact 17 . The insulating region 152 is approximately equal to or slightly larger than the size of the second electrical contact 17 .

FIG. 7 discloses an optoelectronic semiconductor device according to another embodiment of the invention. In this embodiment, the discontinuous region 161 includes a filler 162 to fill at least part of the space in the one or more ohmic contact regions 151 . By adjusting the distribution pattern of the filler 162 in the ohmic contact area 151 , the optical properties, electrical properties, or both of the electromagnetic radiation or light coming from or entering the conversion portion 14 can be changed. The filler 162 is at least one of insulating material, metal, semiconductor, doped semiconductor, and wavelength conversion material. Insulating materials such as oxides, inert gases, air, etc. Wavelength conversion substances such as phosphors, phosphors, dyes, semiconductors, etc. The refractive index of the filler 162 can also be between that of the substances above and below it. If the filler 162 is a particle, its size should preferably be able to fill the ohmic contact region 151 or be smaller than the width, depth, or both of the ohmic contact region 151 . In FIG. 7( a ), the ohmic contact region 151 in contact with the contact layer 16 below the electrical contact 17 is filled with the filler 162 . In FIG. 7( b ), the part of the ohmic contact region 151 in contact with the contact layer 16 below the electrical contact 17 is also filled with the filler 162 , but the other part of the ohmic contact region 151 is not free of the filler 162 . As shown, the outer edge of the contact layer 16 extends into the ohmic contact region 151 . In FIG. 7( c ), the discontinuous region 161 (dotted line) contains the same substance as the contact layer 16 , but also contains a filler 162 .

As shown in FIG. 8 , at least a part of the electrical contact 17 is buried in the second electrical layer 15 . In FIG. 8( a ), an ohmic contact region 151 , a regular surface structure (not shown), an irregular surface structure (not shown), or a combination thereof can be selectively formed under the discontinuous region 161 . In FIG. 8( b ), there is no ohmic contact region 151 below the discontinuity region 161 . If the ohmic contact region 151 is formed on the second electrical layer 15 by epitaxial growth method, the filling material 162 can be filled in the ohmic contact region 151 in the discontinuous region 161 to make it planarized. If the ohmic contact region 151 is formed on the second electrical layer 15 by wet etching, dry etching, or a mixture thereof, an etching mask may be used to cover the portion where the discontinuous region 161 is expected to be formed to avoid the second electrical layer 15. The surface of layer 15 is etched. In FIG. 8(c), the electrical contact 17 is formed as a regular surface structure, an irregular surface structure, or both on any surface that is in contact with the contact layer 16, the second electrical layer 15, or both. Or to increase the contact area between the electrical contact 17 and other parts.

As shown in FIG. 9 , at least a part of the electrical contact 17 is buried in the second electrical layer 15 , and there is no ohmic contact area 151 under the discontinuous area 161 . In one embodiment, after the contact layer 16 covers the upper surface of the second electrical layer 15 with the ohmic contact region 151 formed thereon, part of the contact layer 16 is removed according to a predetermined pattern until the ohmic contact in these regions District 151 was almost removed. In this way, forming the discontinuous region 161 and removing the ohmic contact region 151 are combined in the same series of process steps. In another embodiment, as shown in FIG. 9( b ), a regular surface structure, an irregular surface structure, or a combination thereof may be formed on any inner surface of the discontinuous region 161 . The electrical contact 17 is formed into a regular surface structure, an irregular surface structure, or both on any surface that is in contact with the contact layer 16, the second electrical layer 15, or both to increase the contact between the electrical contact 17 and other surfaces. contact area between parts.

As shown in FIG. 10 , the ohmic contact regions 151 are formed on the second electrical layer 15 with different sizes, and the types of the ohmic contact regions 151 can refer to the foregoing description. Under certain conditions, the condition of the inner or outer surface of the ohmic contact region 151 determines the quality and quantity of the ohmic contact between the contact layer 16 and the second electrical layer 15 . For example, a larger extent of the surface may provide more area to form an ohmic contact. In FIG. 10( a ), the width and depth of the ohmic contact region 151 gradually expand outward from the electrical contact 17 . In FIG. 10( b ), the ohmic contact area 151 under the electrical contact 17 and at a specific position is filled with a filler 162 . For related matters of the filler 162 , please refer to the foregoing description and illustration. In FIG. 10( c ), no ohmic contact region 151 is formed under the electrical contact 17 . Here, "dimension" includes but not limited to length, width, depth, height, thickness, radius, angle, curvature, distance, area, volume.

The above illustrations are only illustrations of various embodiments, and are not intended to limit the formation positions, quantities, or types of the surface structures. "Regular surface structure" refers to a structure in which repetitive features can be identified in any direction on a surface, and the pattern of the repetitive features can be fixed periodicity, variable periodicity, quasiperodicity, or a combination thereof. "Irregular surface structure" refers to a structure in which no recurring features can be discerned in any direction of a surface, this structure may also be referred to as a "random rough surface".

11 and 12 show top views of partial regions of the optoelectronic semiconductor device. In FIG. 11 , the pattern of the discontinuous regions 161 is circular, and can be arranged in a conventional array as in FIG. 11( a ), or in a staggered array as in FIG. 11( b ). The symbol P1 represents the pitch of the circle, and the symbol D1 represents the diameter of the circle. In FIG. 12, the pattern of the discontinuous regions 161 is a square, and can be arranged in a regular array as in FIG. 12(a), or in a staggered array as in FIG. 12(b). The symbol P2 represents the pitch of the square, and the symbol D2 represents the side length of the square. However, the shape of the discontinuous region 161 is not limited thereto, and other shapes such as rectangle, rhombus, parallelogram, ellipse, triangle, pentagon, hexagon, trapezoid, or irregular shape can also be adopted by the present invention.

Table 1 is a compilation of several experimental results. In the experiment, a 45mil×45mil blue-ray bare core produced by China Taiwan Epistar Optoelectronics Co., Ltd. was used. Its structure is similar to that of the photoelectric semiconductor device 10 in FIG. Discontinuities and contact layers of 12(a), namely circular regular arrays, circular staggered arrays, and square regular arrays. The material of the contact layer 16 is indium tin oxide deposited by electron beam, the particle size of which is about 50nm-80nm, and the refractive index is about 2. The unit of D1, D2, P1, and P2 is μm. Vf is the forward voltage. The area ratio is the percentage of the total area of the discontinuity to the area of the contact layer. As shown in Table 1, it can be found that in order to obtain brightness increase and decrease Vf, the area of the discontinuity must be properly controlled. In addition, the density of discontinuities in the contact layer is also a controlling parameter. The method for calculating the current dispersion distance (Ls) between the two electrodes of the light-emitting diode was provided by X.Guo et al. in the paper Applied Physics Letters, Vol.78, No.21, p.3337, which cited part of this application. Based on the estimation in the above literature, if the size of the discontinuity falls within the scale of the current dispersion distance, the current can flow through the second electrical region across a discontinuity and then flow into the contact layer. As a result, current can travel a greater distance in the contact layer.

Table 1

In several other embodiments of the present invention, the top views of the contact layer 16 are shown in FIGS. 13-15 respectively. Reference numeral 153 denotes a platform. However, the patterns, quantities, and proportions in each figure are only examples, and are not intended to limit the implementation of the present invention. Other principles, principles, principles, guidelines, or other teachings described herein can be reasonably applied to the present invention. middle.

In FIG. 13 , the second electrical contact 17 includes a root portion 171 , a branch portion 172 , and an end portion 173 , which together form a current network and guide current toward a predetermined direction. The root 171 is the origin of the appearance of the branch 172 and the end 173, and is usually a prominent point in the appearance, which can be used as a reference point in the process or inspection process, and is often used as a connection with an external circuit. The end part 173 is the end part of the network, that is, there are no other branches. The branch portion 172 is located between the root portion 171 and the end portion 173 . Any two parts are electrically connected to each other, or optionally physically connected to each other. For example, any two parts can be electrically connected to each other through external wires, contact layers 16, discontinuous regions 161, intermediate materials, or lower regions, wherein the "intermediate material" refers to the material formed in the gap between adjacent two parts. The intermediate material is either formed of a material different from at least one part, or formed in other process steps; the lower area refers to the electrical layer or electrical area located below any of the three parts that can serve as a current channel, such as the second The electrical layer 15 or the highly doped region.

In one embodiment, the second electrical contact 17 may only include a root portion 171 and an end portion 173 . In other embodiments, each root portion 171 , branch portion 172 , and end portion 173 can be connected to the underlying material in the same or different ways, and the connection methods can refer to the descriptions of the aforementioned embodiments and illustrations. In addition, a current blocking region can be selectively formed under each part, so as to create an obstacle for the current to flow to the material below, or to adjust the form of the current flowing downward. The current blocking region achieves the above functions by forming an insulating or poorly conductive material under the target portion. In the figure, the number, shape, and layout of the root portion 171 , the branch portion 172 , and the end portion 173 are only examples, and are not intended to limit the present invention. For example, the second electrical contact 17 may include two or more root portions 171 , and branch portions 172 , end portions 173 , or both may be selectively formed between the root portions 171 . One root 171 may surround two or more branches 172 or ends 173 . Two or more end portions 173 can be branched from one branch portion 172 .

The discontinuous regions 161 are formed inwardly from the outer boundary 163 of the contact layer 16 , and these discontinuous regions 161 do not pass through the contact layer 16 , that is, each discontinuous region 161 has only one opening 164 on the outer boundary 163 . And two or more discontinuous regions 161 can share an opening 164, as shown by the dotted line region. From the top view, the discontinuous region 161 may intersect (not shown) or not intersect with the second electrical contact 17 . When the discontinuous region 161 intersecting with the second electrical contact 17 is made of insulating or poorly conductive material, this intersecting discontinuous region 161 can be integrated with the aforementioned current blocking region 165, as shown in Figure 14 at the hatch shown. The position and size of the current blocking region 165 in the figure are only examples, and are not intended to limit the implementation of the present invention.

In one embodiment, at least one element of the angle, length, width, depth, and pitch of at least three continuous discontinuous regions 161 in any or part of the range along the outer boundary 163 is different. As shown in Figure 13, the discontinuous regions 1611, 1612, and 1613 have the same angle, length, and width, but their spacing is not the same. The configuration presents irregular changes in one dimension. The irregular changes include local or overall irregular changes, for example, an irregular change area between two regular change areas. "Regular change" means a proportional change or a differential change. In another example, the discontinuities 1614, 1615, and 1616 have different angles, lengths, widths, and spacings.

In FIG. 13 and FIG. 14 , the second electrical contact 17 is bilaterally symmetrical. In FIG. 15 , the second electrical contact 17 is asymmetric. In FIGS. 13 to 15 , the first electrical contact 18 is bilaterally symmetrical, but it is not limited thereto. In other words, the first electrical contact 18 can also be asymmetrical. In one embodiment, the overall change trend of the discontinuous area conforms to the shape of the second electrical contact 17 , but it is not ruled out that a few discontinuous areas 161 may deviate from the change trend. For example, among the two longer discontinuous regions 161 surrounding the root portion 171 or the end portion 173 , there may still be a shorter one from time to time. In another embodiment, the distance between at least part of the discontinuous region 161 and the second electrical contact 17 is approximately maintained at a constant value or within a stable range, for example, each discontinuous region 161 and branch 172 arranged on both sides of the branch 172 The spacing between them is roughly the same, that is, the size of the spacing falls within a reasonable process tolerance range.

Although the above illustrations and descriptions only correspond to specific embodiments, however, the components, implementation methods, design principles, and technical principles described or disclosed in each embodiment are in conflict with each other, contradictory, or difficult to implement together. In addition, those skilled in the art can refer to, exchange, match, coordinate, or merge arbitrarily according to their needs.

Although the present invention has been described above, it is not intended to limit the scope of the present invention, the implementation sequence, or the materials and process methods used. Various modifications and changes made to the present invention do not depart from the spirit and scope of the present invention.

Claims (20)

1. opto-semiconductor device comprises:

One energy conversion system can carry out the conversion between luminous energy and electric energy, and wherein this energy conversion system comprises a surface, one first contact zone and a plurality of second contact zone, and wherein this first contact zone and these a plurality of second contact zones are formed at this surface;

One first material block is formed on this first contact zone of this energy conversion system, and penetrable for a specific wavelength of light; And

A plurality of second material blocks are formed on these a plurality of second contact zones of this energy conversion system;

Wherein, the resistance between this first material block and this first contact zone is less than the resistance between this second material block and this second contact zone.

2. opto-semiconductor device as claimed in claim 1, wherein this first contact zone comprises the tapered hole of a hexagonal.

3. opto-semiconductor device as claimed in claim 1, wherein this first contact zone comprises one and forms the surface of ohmic contact with this first material block.

4. opto-semiconductor device as claimed in claim 1, wherein this first material block and this second material block form patterning configuration.

5. opto-semiconductor device as claimed in claim 1, wherein this second contact zone comprises an insulation material.

6. opto-semiconductor device comprises:

One energy conversion system, in order to carry out the conversion between luminous energy and electric energy, this energy conversion system has one first side;

One electrical contact is arranged on this first side of said energy conversion system;

One contact layer is formed at this first side of this energy conversion system, and comprises an external boundary and at least one ohmic contact regions, wherein can form ohmic contact between this ohmic contact regions and this energy conversion system; And

Two or more locus of discontinuities, become a pattern distribution, make edge outside electric current lateral flow to the contact layer that comes from this electrical contact.

7. opto-semiconductor device as claimed in claim 6, wherein this locus of discontinuity comprise how much, material, physical characteristic, and chemical characteristic in one of which discontinuous at least.

8. opto-semiconductor device as claimed in claim 6, wherein this locus of discontinuity comprises a kind of structure, and it shows cognizable one repeated characteristic on arbitrary direction on a surface.

9. opto-semiconductor device as claimed in claim 8, kenel that wherein should the repeatability characteristic comprise fixed cycle, variable period, and paracycle in one of which at least.

10. opto-semiconductor device as claimed in claim 6, wherein this locus of discontinuity comprises a kind of irregular surface structure.

11. opto-semiconductor device as claimed in claim 6, wherein the size of this locus of discontinuity is less than or equal to an electric current dispersion distance.

12. opto-semiconductor device as claimed in claim 6, wherein this contact layer comprises tin indium oxide.

13. opto-semiconductor device as claimed in claim 6, wherein this ohmic contact regions comprises at least one sinking space, and its geometry comprises pyramid, circular cone, cuts in the body one of which at least with tack.

14. opto-semiconductor device as claimed in claim 6, wherein this ohmic contact regions comprises an at least one inclined-plane and a plane, and wherein this inclined-plane can be good ohmic contact than this plane with this energy conversion system formation.

15. opto-semiconductor device as claimed in claim 6 wherein has bigger contact area than this ohmic contact regions near this external boundary.

16. opto-semiconductor device as claimed in claim 6, wherein this ohmic contact regions is formed on the outer surface of this energy conversion system.

17. opto-semiconductor device as claimed in claim 6 does not wherein have this ohmic contact regions between the part at least of this locus of discontinuity and this energy conversion system.

18. opto-semiconductor device as claimed in claim 6, wherein in this locus of discontinuity at least one of which comprise a chymoplasm.

19. opto-semiconductor device as claimed in claim 6, wherein this energy conversion system comprises a transition zone.

20. opto-semiconductor device as claimed in claim 6 also comprises:

One electrical contact near this energy conversion system, and forms with this contact layer and to electrically contact.

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