GB2383679A - PIN photodiode with intrinsic region implanted with deep band gap levels - Google Patents
PIN photodiode with intrinsic region implanted with deep band gap levels Download PDFInfo
- Publication number
- GB2383679A GB2383679A GB0131001A GB0131001A GB2383679A GB 2383679 A GB2383679 A GB 2383679A GB 0131001 A GB0131001 A GB 0131001A GB 0131001 A GB0131001 A GB 0131001A GB 2383679 A GB2383679 A GB 2383679A
- Authority
- GB
- United Kingdom
- Prior art keywords
- photodiode
- intrinsic region
- band gap
- wavelength
- deep
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 230000007547 defect Effects 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 13
- 238000005468 ion implantation Methods 0.000 claims abstract description 10
- 239000004065 semiconductor Substances 0.000 claims abstract description 9
- 238000010521 absorption reaction Methods 0.000 claims abstract description 7
- 239000012535 impurity Substances 0.000 claims abstract description 6
- 239000012212 insulator Substances 0.000 claims abstract description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 26
- 229910052710 silicon Inorganic materials 0.000 claims description 24
- 239000010703 silicon Substances 0.000 claims description 24
- 230000003287 optical effect Effects 0.000 claims description 15
- 230000009102 absorption Effects 0.000 claims description 6
- 238000000034 method Methods 0.000 claims description 6
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- 229910052734 helium Inorganic materials 0.000 claims description 3
- 239000001307 helium Substances 0.000 claims description 3
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 claims description 3
- 239000001257 hydrogen Substances 0.000 claims description 3
- 229910052739 hydrogen Inorganic materials 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 239000001301 oxygen Substances 0.000 claims description 3
- 229910052760 oxygen Inorganic materials 0.000 claims description 3
- 125000004435 hydrogen atom Chemical class [H]* 0.000 claims description 2
- 230000003993 interaction Effects 0.000 claims description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims 1
- 229910052799 carbon Inorganic materials 0.000 claims 1
- 230000004048 modification Effects 0.000 claims 1
- 238000012986 modification Methods 0.000 claims 1
- 230000005855 radiation Effects 0.000 abstract 2
- 239000002800 charge carrier Substances 0.000 description 9
- 239000000463 material Substances 0.000 description 7
- 238000010438 heat treatment Methods 0.000 description 6
- 238000002513 implantation Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 150000002500 ions Chemical class 0.000 description 3
- 230000007246 mechanism Effects 0.000 description 3
- -1 Si+ Chemical class 0.000 description 2
- 230000004913 activation Effects 0.000 description 2
- 125000004429 atom Chemical group 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 125000004432 carbon atom Chemical group C* 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 239000002019 doping agent Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000005286 illumination Methods 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 229910021419 crystalline silicon Inorganic materials 0.000 description 1
- 230000005693 optoelectronics Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/12—Active materials
- H10F77/122—Active materials comprising only Group IV materials
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F30/00—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors
- H10F30/20—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors
- H10F30/21—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation
- H10F30/22—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes
- H10F30/223—Individual radiation-sensitive semiconductor devices in which radiation controls the flow of current through the devices, e.g. photodetectors the devices having potential barriers, e.g. phototransistors the devices being sensitive to infrared, visible or ultraviolet radiation the devices having only one potential barrier, e.g. photodiodes the potential barrier being a PIN barrier
Landscapes
- Light Receiving Elements (AREA)
Abstract
A photodiode comprises p-i-n diode having intrinsic region (5) between p- and n-doped regions (6,7) formed on semiconductor substrate (2), which may be a silicon-on-insulator chip (1,3). The intrinsic region (5) is modified to introduce deep band gap levels (11) thus enabling absorption of incident radiation at a longer wavelength and lower energy than the band gap. This enables an electrical signal to be generated across the p-i-n diode at this longer wavelength, resulting in a current in circuit (10). The intrinsic region (5) may be modified by ion implantation to introduce defects such as elemental impurities, and may form part of a rib waveguide structure (4). The wavelength band absorbed by the deep band gap levels may range from 1.3 to 1.5 microns, with the band gap corresponding to radiation of 0.6 to 0.8 microns.
Description
<Desc/Clms Page number 1>
A PHOTODIODE The present invention relates to a photodiode and, in particular, a photodiode fabricated so as to sense optical signals of a selected wavelength or wavelength band.
Discrete silicon based p-i-n photodiodes are used in the opto-electronics industry. Their efficiency is greatest in the wavelength region 0.6-0. 8 microns which corresponds to the energy band-gap of silicon.
Silicon based optical circuits are now being produced and these require photodiodes for sensing optical signals within the circuits. To date, such photodiodes have been formed of other materials, e. g. InGaAs/Ge, which are capable of sensing the wavelengths of 1.3 and 1.5 microns commonly used in opto-communication devices and/or are of such a construction that the diode has to be hybridised with the silicon circuits, i. e. mounted thereon as a separate component.
The present invention provides an alternative form of photodiode for use in optical circuits.
According to a first aspect of the invention, there is provided a photodiode comprising a p-i-n diode formed in a semiconductor substrate having an energy band gap the magnitude of which corresponds to absorption of photons of a first wavelength, the photodiode comprising a substantially intrinsic region formed in said semiconductor substrate between p-and ndoped regions, the intrinsic region being modified to introduce deep band gap levels therein so as to provide at least partial absorption of photons of an optical signal of a selected wavelength or wavelength band greater than said first wavelength and thus generate an electrical signal across the p-i-n diode indicative of said optical signal.
<Desc/Clms Page number 2>
Preferably, the semiconductor substrate is silicon in which case the photodiode can be integrated within a silicon-based integrated optical circuit. The need to hybridise photodiodes made of other semiconductor materials onto a silicon substrate is thus avoided.
Preferably, the deep band gap levels are provided by ion implantation as this method allows precise control of the depth and concentration of the deep band gap states so the wavelength and amount of light absorbed can be tightly controlled.
Other preferred and optional features of the invention will be apparent from the following description and from the subsidiary claims of the specification.
Deep band gap states referred to herein are states between the valence band and conduction band of the semiconductor material but spaced therefrom by a sufficient energy gap such that thermal excitation of electrons from the valence band to the deep band gap state or from the deep band gap state to the conductive band is small (so the dark current of the device is low). It will be appreciated that the magnitude of this energy gap will depend upon the temperature of the device, and, whilst the present invention is not limited to temperature, it is primarily directed towards devices designed to operate in the temperature range of 0 to 100 degrees Centigrade.
The invention will now be further described, merely by way of example, with reference to the accompanying drawings, in which :- Figure 1 is a schematic, cross-sectional view of a photodiode according to one embodiment of the invention; Figure 2 is a band-gap diagram illustrating the operation of a photodiode such as that shown in Figure 1; and
<Desc/Clms Page number 3>
Figures 3A to 3F illustrates steps in a preferred method of fabricating a photodiode such as that shown in Figure 1.
Figure 1 shows a schematic, cross-sectional view of a p-i-n photodiode formed in a silicon substrate. In the example shown, the silicon substrate comprises a silicon-on-insulator chip having a silicon light conducting layer 1 separated from a substrate 2, which is also typically of silicon, by a light confining layer 3, e. g. of silicon dioxide.
A rib 4 is formed in the silicon layer 1 so as to form a rib waveguide therein.
The approximate position of the optical mode within this waveguide is illustrated by the dashed line 5.
Recesses 1 A and 1 B are preferably formed in the silicon layer 1 and n-and pdoped regions 6 and 7 formed in the silicon layer 1 by doping through these recesses. Electrical contacts 8 and 9 connect the n-and p-doped regions to an electrical circuit 10 arranged to provide a reverse bias between the n-and p-doped regions.
Other doping arrangements are possible, e. g. without the recesses 1A and 1 B (see Figure 3) or side-doped arrangements as described in WO 00/10039.
The layer 1 of silicon between the n-and p-doped regions is substantially intrinsic so this arrangement forms a p-i-n diode across the rib waveguide.
However, the intrinsic region is modified to introduce deep band gap levels therein as indicated by the Xs in region 11 of Figure 1. These levels can be excited by sub-band-gap photons so producing free charge carriers and thus a measurable electrical signal in the circuit 10 upon application of a voltage across the p-i-n diode.
Deep band gap levels can be introduced by ion implantation which can give rise to free charge carriers in several ways:
<Desc/Clms Page number 4>
(i) ion implantation and subsequent activation by heat treatment of deep- level impurities, e. g. gold, oxygen or carbon atoms. The heat treatment typically involves heating to 650-1000 degrees C for several seconds.
The impurity atoms occupy sites in the crystal lattice and the electrons associated therewith form the deep band gap states. The heat treatment re-crystallises the silicon to repair the damage caused by the implantation of the impurities.
(ii) ion implantation induced defects in doped material, the defects resulting from the implantation of non-dopant atoms such as silicon, helium or hydrogen. Charge carriers will be trapped in the deep-gap defect states and released to the conduction band upon illumination by light of the appropriate wavelength.
(iii) ion implantation induced defects (in the crystalline structure) in the intrinsic material. In this case, charge carriers may be excited into the deep-gap states upon illumination by light of the appropriate wavelength and then undergo"hopping"conduction from defect to defect.
The formation of deep band gap levels and the mechanisms by which they give rise to free charge carriers are known so need not be described in greater detail.
As discussed above, deep band gap levels produced by each of these methods should be deep enough to provide a low dark-current, i. e. no signal or only a very low signal is produced when the defects are not illuminated as thermal excitation of carriers is too low to produce enough free charge carriers to give rise to a significant electrical current.
<Desc/Clms Page number 5>
The use of ion implantation to form the deep band gap levels allows precise control of their depth and concentration so the amount of light absorbed can be tightly controlled. In the illustrated example, the deep band gap levels are formed at a depth which corresponds with the location of the optical mode 5 so as to maximise the interaction therewith. However, in other arrangements the deep band gap levels may be located so as to interact with only part of the optical mode.
Figure 2 is a band-gap diagram illustrating operation of the device. The lines 20 and 21 represent the energy levels of the band gap from the p-doped region to the n-doped region when the p-i-n diode is under reverse bias. The Xs again represent the deep band gap levels and are located in the intrinsic region between the band-gap energy levels. Charge carriers absorbing incoming photons (indicated by hv) can be excited from the lower energy level 20 to the deep-sub-band-gap levels as indicated by vertical arrow 22A and then take part in hopping conduction. Alternatively, carriers absorbing incoming photons can be excited from the deep-sub-band-gap levels to the upper energy level 21 as indicated by vertical arrow 22B.
A p-i-n photodiode such as that described in relation to Figure 1 can be integrated with an optical circuit formed on the silicon-on-insulator chip thus avoiding the need to hybridise a photodiode onto the silicon chip.
Figures 3A-3F illustrate a method by which a photodiode such as that described above may be fabricated.
Figure 3A illustrates a rib 4 etched in the silicon layer 1 of a silicon-oninsulator chip.
Figure 3B shows the formation of p-and n-doped regions 6 and 7 by conventional doping techniques.
<Desc/Clms Page number 6>
A mask 30, e. g. of silicon dioxide is then formed over the device and a window 31 formed in the mask to expose the upper surface of rib 4 as shown in Figure 3C.
Figure 3D illustrates the ion implantation step through the window 31 in the mask 30. Ions such as Si+, He'or H'may be implanted to create damage in the crystalline silicon layer 1. Such damage in turn creates deep-sub-bandgap states allowing subsequent detection of deep-sub-band-gap light as described by mechanisms (ii) and (iii) above. Alternatively, ions such as Au+, 0+ or C+ may be implanted. These ions, once electrically activated create deep-sub-band-gap states allowing subsequent detection of deep-sub-bandgap light as described in mechanism (i) above.
The mask 30 is then removed and the device thermally treated to either engineer the defect structure (in the case of, e. g., Si+, He+ or H+ implantation) or electrically activate the deep electrical dopants (in the case of, e. g., Au+, C+ or 0+ implantation). In the case of defect engineering, this typically involves heat treatment at temperatures between 25 and 800 degrees C for several seconds. In the case of electrical activation, this will typically involve heat treatment at temperatures between 650 and 1000 degrees C for several minutes. The deep-sub-band gap defects thus produced are indicated by Xs in Figure 3E.
Finally, electrical contacts 8 and 9 are formed and the device connected to an electrical circuit 10 as shown in figure 3F.
As discussed above, when an optical signal of a selected wavelength or wavelength band, in this case the 1.3 and 1.5 micron bands commonly used in opto-communication applications, is transmitted along the rib waveguide an electrical signal is generated by charge carriers moving either to or from the deep-sub-band-gap levels either to or from the conduction valance bands as
<Desc/Clms Page number 7>
illustrated in Figure 2 which can be detected by the electrical circuit 10 to provide an output indicative of said optical signal.
A photodiode capable of detecting photons of a wavelength greater than that corresponding to the band gap of silicon can thus be provided by forming defects in the intrinsic region of a p-i-n photodiode and engineering these defects to provide deep-sub-band-gap levels in the intrinsic region.
The deep-sub-band-gap levels may be formed in various ways. As mentioned above, this may comprise the introduction of electrical impurities such as gold, oxygen or carbon atoms. Or it may comprise forming defects in the silicon itself, e. g. caused by the implantation or bombardment of the silicon by hydrogen, helium or silicon atoms.
Other geometric arrangements of the p-i-n photodiode structure may also be used. Figure 1 illustrates a lateral p-i-n photodiode formed across a rib waveguide. A vertical p-i-n structure may also be used, e. g. by forming pdoped regions on each side of the waveguide and an n-doped region on the top of the rib of the waveguide, or vice versa. In some cases, a longitudinal p-i-n diode may also be used.
The p-i-n photodiode structure may also be used in relation to other types of waveguide or in any arrangement in which the light to be sensed is incident thereon, e. g. at the end of a waveguide or on an area of the chip exposed to an external light source or within a resonant cavity.
The dimensions of the rib waveguide are typically in the range of 2-20 microns. The charge carriers generated within the photodiode therefore only need to be swept over relatively short distance, e. g. 10 microns or less or preferably 5 microns or less, before being detected by the p-or n-doped regions.
<Desc/Clms Page number 8>
The deep-sub-band gap levels may also be formed at any position or positions within the intrinsic region. For instance, instead of being centrally located as shown in Figure 3F they may be located either side of the region, e. g. in the slab regions between the rib 4 and the doped regions 6 and 7.
The nature of the arrangements described above also allow the photodiode to be fabricated easily and extremely accurately and for its properties to be carefully tailored to suit the application. The energy levels of the deep band gap levels can be accurately determined as well as their location within the device.
Also, whilst the invention has been described above in relation to the p-i-n photo-diode formed in silicon, the invention can also be applied to other semiconductor material in which deep band gap levels can be introduced to enable wavelengths longer than that associated with the band gap of the material to be detected.
Further aspects of the photodiode described herein are described and claimed in the applicant's co-pending application GB.............. entitled"A Light Sensor"filed on the same day as this application and the disclosure thereof is incorporated herein.
Claims (18)
- CLAIMS 1. A photodiode comprising a p-i-n diode formed in a semiconductor substrate having an energy band gap the magnitude of which corresponds to absorption of photons of a first wavelength, the photodiode comprising a substantially intrinsic region in said semiconductor substrate between p-and n-doped regions, the intrinsic region being modified to introduce deep band gap levels therein so as to provide at least partial absorption of photons of an optical signal of a selected wavelength or wavelength band greater than said first wavelength and thus generate an electrical signal across the p-i-n diode indicative of said optical signal.
- 2. A photodiode as claimed in Claim 1 in which the intrinsic region is modified by ion implantation.
- 3. A photodiode as claimed in Claim 1 or 2 in which the modification comprises defects in the intrinsic region.
- 4. A photodiode as claimed in Claim 3 in which the defects comprise defects in the crystalline structure of the intrinsic region itself.
- 5. A photodiode as claimed in Claim 3 or 4 in which the defects comprise elemental impurities.
- 6. A photodiode as claimed in any preceding claim in which the intrinsic region forms part of a waveguide.
- 7. A photodiode as claimed in Claim 6 in which the deep band gap levels are located so as to maximise their interaction with light transmitted along the waveguide.<Desc/Clms Page number 10>
- 8. A photodiode as claimed in Claim 6 or 7 in which the waveguide is a rib waveguide.
- 9. A photodiode as claimed in Claim 8 in which the p-and n-doped regions are formed on opposite sides of the rib waveguide.
- 10. A photodiode as claimed in Claim 8 in which the p-doped region is formed on one side or both side of the rib waveguide and the n-doped region on top of the rib waveguide, or vice versa.
- 11. A photodiode as claimed in any preceding claim in which the substrate is silicon.
- 12. A photodiode as claimed in Claim 11 in which the substrate is a silicon- on-insulator chip.
- 13. A photodiode as claimed in any preceding claim in which the selected wavelength band is around 1.3 or 1.5 microns.
- 14. A method of fabricating a photodiode comprising the steps of: forming p-and n-doped regions in a substrate having an energy band gap the magnitude of which corresponds to absorption of photons of a first wavelength with a substantially intrinsic region therebetween; modifying the intrinsic region to introduce deep band gap levels therein so as to provide at least partial absorptions of photons of selected wavelength or wavelength band greater than said first wavelength.
- 15. A method as claimed in Claim 14 in which the modifying of the intrinsic region is by ion implantation.<Desc/Clms Page number 11>
- 16. A method as claimed in claim 15 in which one or more of the following species is implanted : gold, oxygen, carbon, hydrogen, helium, and silicon atoms.
- 17. A photodiode substantially as thereinbefore described with reference to and/or as shown in one or more of the accompanying drawings.
- 18. A method of fabricating a photodiode substantially as hereinbefore described.
Priority Applications (7)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0131001A GB2383679A (en) | 2001-12-27 | 2001-12-27 | PIN photodiode with intrinsic region implanted with deep band gap levels |
| GB0218842A GB2383684A (en) | 2001-12-27 | 2002-08-14 | A light sensor |
| US10/500,318 US7386207B2 (en) | 2001-12-27 | 2002-12-27 | In-line light sensor |
| AU2002356330A AU2002356330A1 (en) | 2001-12-27 | 2002-12-27 | An in-line waveguide photo detector |
| PCT/GB2002/005930 WO2003060599A2 (en) | 2001-12-27 | 2002-12-27 | An in-line waveguide photo detector |
| US12/080,824 US7826700B2 (en) | 2001-12-27 | 2008-04-04 | In-line light sensor |
| US12/807,973 US8326094B2 (en) | 2001-12-27 | 2010-09-17 | In-line light sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB0131001A GB2383679A (en) | 2001-12-27 | 2001-12-27 | PIN photodiode with intrinsic region implanted with deep band gap levels |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB0131001D0 GB0131001D0 (en) | 2002-02-13 |
| GB2383679A true GB2383679A (en) | 2003-07-02 |
Family
ID=9928426
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0131001A Withdrawn GB2383679A (en) | 2001-12-27 | 2001-12-27 | PIN photodiode with intrinsic region implanted with deep band gap levels |
| GB0218842A Withdrawn GB2383684A (en) | 2001-12-27 | 2002-08-14 | A light sensor |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB0218842A Withdrawn GB2383684A (en) | 2001-12-27 | 2002-08-14 | A light sensor |
Country Status (1)
| Country | Link |
|---|---|
| GB (2) | GB2383679A (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2829906B1 (en) * | 2013-07-23 | 2018-11-28 | IMEC vzw | Carrier-depletion based silicon waveguide resonant cavity modulator with integrated optical power monitor |
| WO2019180165A1 (en) | 2018-03-22 | 2019-09-26 | Iee International Electronics & Engineering S.A. | Photodetector |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01140679A (en) * | 1987-11-26 | 1989-06-01 | Nec Corp | Semiconductor photodetector |
| JPH0480974A (en) * | 1990-07-24 | 1992-03-13 | Hamamatsu Photonics Kk | Semiconductor photodetector |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH02226776A (en) * | 1989-02-28 | 1990-09-10 | Canon Inc | Wavelength selection photodetector |
| US5227648A (en) * | 1991-12-03 | 1993-07-13 | Woo Jong Chun | Resonance cavity photodiode array resolving wavelength and spectrum |
| US5291055A (en) * | 1992-01-28 | 1994-03-01 | The United States Of America As Represented By The Administrator Of National Aeronautics And Space Administration | Resonant infrared detector with substantially unit quantum efficiency |
| US6074892A (en) * | 1996-05-07 | 2000-06-13 | Ciena Corporation | Semiconductor hetero-interface photodetector |
| US6055262A (en) * | 1997-06-11 | 2000-04-25 | Honeywell Inc. | Resonant reflector for improved optoelectronic device performance and enhanced applicability |
| WO1999048156A2 (en) * | 1998-03-19 | 1999-09-23 | Koninklijke Philips Electronics N.V. | Radiation-sensitive semiconductor device and method of manufacturing same |
-
2001
- 2001-12-27 GB GB0131001A patent/GB2383679A/en not_active Withdrawn
-
2002
- 2002-08-14 GB GB0218842A patent/GB2383684A/en not_active Withdrawn
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH01140679A (en) * | 1987-11-26 | 1989-06-01 | Nec Corp | Semiconductor photodetector |
| JPH0480974A (en) * | 1990-07-24 | 1992-03-13 | Hamamatsu Photonics Kk | Semiconductor photodetector |
Also Published As
| Publication number | Publication date |
|---|---|
| GB0218842D0 (en) | 2002-09-25 |
| GB0131001D0 (en) | 2002-02-13 |
| GB2383684A (en) | 2003-07-02 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |