GB2367424B - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number: GB2367424B
Authority: GB; United Kingdom
Prior art keywords: memory device; semiconductor memory; semiconductor; memory
Prior art date: 2000-09-29
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired - Fee Related

Application number

GB0023792A

Other versions

GB2367424A (en

GB0023792D0 (en

Inventor

Piero Migliorato

Satoshi Inoue

Ichio Yudasaka

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

Seiko Epson Corp

Original Assignee

Seiko Epson Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

2000-09-29

Filing date

2000-09-29

Publication date

2004-10-27

2000-08-22 Priority to US09/643,773 priority Critical patent/US6580663B1/en

2000-09-29 Application filed by Seiko Epson Corp filed Critical Seiko Epson Corp

2000-09-29 Priority to GB0023792A priority patent/GB2367424B/en

2000-11-08 Publication of GB0023792D0 publication Critical patent/GB0023792D0/en

2001-09-27 Priority to US09/965,686 priority patent/US6580633B2/en

2002-04-03 Publication of GB2367424A publication Critical patent/GB2367424A/en

2004-10-27 Application granted granted Critical

2004-10-27 Publication of GB2367424B publication Critical patent/GB2367424B/en

2020-09-29 Anticipated expiration legal-status Critical

Status Expired - Fee Related legal-status Critical Current

Classifications

- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B53/00—Ferroelectric RAM [FeRAM] devices comprising ferroelectric memory capacitors
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D30/00—Field-effect transistors [FET]
- H10D30/60—Insulated-gate field-effect transistors [IGFET]
- H10D30/67—Thin-film transistors [TFT]
- H10D30/6729—Thin-film transistors [TFT] characterised by the electrodes
- H10D30/673—Thin-film transistors [TFT] characterised by the electrodes characterised by the shapes, relative sizes or dispositions of the gate electrodes
- H10D30/6733—Multi-gate TFTs
- H10D30/6734—Multi-gate TFTs having gate electrodes arranged on both top and bottom sides of the channel, e.g. dual-gate TFTs
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D86/00—Integrated devices formed in or on insulating or conducting substrates, e.g. formed in silicon-on-insulator [SOI] substrates or on stainless steel or glass substrates

Landscapes

Engineering & Computer Science (AREA)
Computer Hardware Design (AREA)
Semiconductor Memories (AREA)
Dram (AREA)

GB0023792A 1998-06-15 2000-09-29 Semiconductor memory device Expired - Fee Related GB2367424B (en)

Priority Applications (3)

Application Number	Priority Date	Filing Date	Title
US09/643,773 US6580663B1 (en)	1998-06-15	2000-08-22	Celestial timepiece assembly
GB0023792A GB2367424B (en)	2000-09-29	2000-09-29	Semiconductor memory device
US09/965,686 US6580633B2 (en)	2000-09-28	2001-09-27	Nonvolatile semiconductor memory device

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
GB0023792A GB2367424B (en)	2000-09-29	2000-09-29	Semiconductor memory device

Publications (3)

Publication Number	Publication Date
GB0023792D0 GB0023792D0 (en)	2000-11-08
GB2367424A GB2367424A (en)	2002-04-03
GB2367424B true GB2367424B (en)	2004-10-27

Family

ID=9900307

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB0023792A Expired - Fee Related GB2367424B (en)	1998-06-15	2000-09-29	Semiconductor memory device

Country Status (1)

Country	Link
GB (1)	GB2367424B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
WO2010097862A1 (en) *	2009-02-24	2010-09-02	パナソニック株式会社	Semiconductor memory cells and manufacturing method therefor as well as semiconductor memory devices
WO2011052179A1 (en)	2009-10-29	2011-05-05	パナソニック株式会社	Method for driving semiconductor storage device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH08335645A (en) *	1995-06-08	1996-12-17	Mitsubishi Electric Corp	Semiconductor device and control method thereof
JPH11214642A (en) *	1997-12-31	1999-08-06	Samsung Electronics Co Ltd	SINGLE TRANSISTOR CELL, METHOD OF MANUFACTURING THE SAME, MEMORY CIRCUIT COMPRISING THE SINGLE TRANSISTOR CELL, AND METHOD OF DRIVING THE SAME

2000
- 2000-09-29 GB GB0023792A patent/GB2367424B/en not_active Expired - Fee Related

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
JPH08335645A (en) *	1995-06-08	1996-12-17	Mitsubishi Electric Corp	Semiconductor device and control method thereof
US5723885A (en) *	1995-06-08	1998-03-03	Mitsubishi Denki Kabushiki Kaisha	Semiconductor device including a ferroelectric film and control method thereof
JPH11214642A (en) *	1997-12-31	1999-08-06	Samsung Electronics Co Ltd	SINGLE TRANSISTOR CELL, METHOD OF MANUFACTURING THE SAME, MEMORY CIRCUIT COMPRISING THE SINGLE TRANSISTOR CELL, AND METHOD OF DRIVING THE SAME
US6222756B1 (en) *	1997-12-31	2001-04-24	Samsung Electronics Co., Ltd.	Single transistor cell, method for manufacturing the same, memory circuit composed of single transistor cells, and method for driving the same

Also Published As

Publication number	Publication date
GB2367424A (en)	2002-04-03
GB0023792D0 (en)	2000-11-08

Publication	Publication Date	Title
EP1282133A4 (en)	2007-12-19	Semiconductor memory
SG99939A1 (en)	2003-11-27	Semiconductor device
GB2373634B (en)	2004-12-08	Semiconductor device
SG76637A1 (en)	2000-11-21	Semiconductor memory device
GB2373906B (en)	2004-12-01	Semiconductor memory device
EP1293986A4 (en)	2005-04-27	Semiconductor storage device
GB2370916B (en)	2005-05-04	Semiconductor device
SG71902A1 (en)	2000-04-18	Semiconductor memory device
EP1324205A4 (en)	2004-12-29	Memory device
GB0003302D0 (en)	2000-04-05	Semiconductor devices
GB2365621B (en)	2004-07-14	Semiconductor device
GB2368725B (en)	2004-12-08	Semiconductor memory device and fabrication
GB2342778B (en)	2003-05-21	Semiconductor memory device
SG109474A1 (en)	2005-03-30	Semiconductor device
GB2362990B (en)	2005-02-02	Memory device
GB0000354D0 (en)	2000-03-01	Semiconductor memory device
GB2354865B (en)	2004-01-28	Semi-conductor memory device
GB2376781B (en)	2003-09-24	Memory device
SG97851A1 (en)	2003-08-20	Semiconductor memory device
TW520062U (en)	2003-02-01	Semiconductor memory device
GB2371662B (en)	2004-11-03	Semiconductor memory device
GB2367424B (en)	2004-10-27	Semiconductor memory device
GB2362976B (en)	2005-04-27	Memory device
GB2367423B (en)	2004-10-06	Semiconductor memory device
GB0219754D0 (en)	2002-10-02	Semiconductor device

Legal Events

Date	Code	Title	Description
2019-05-22	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 20180929