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GB0000354D0 - Semiconductor memory device - Google Patents

Semiconductor memory device

Info

Publication number
GB0000354D0
GB0000354D0 GBGB0000354.1A GB0000354A GB0000354D0 GB 0000354 D0 GB0000354 D0 GB 0000354D0 GB 0000354 A GB0000354 A GB 0000354A GB 0000354 D0 GB0000354 D0 GB 0000354D0
Authority
GB
United Kingdom
Prior art keywords
memory device
semiconductor memory
semiconductor
memory
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
GBGB0000354.1A
Other versions
GB2349249A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
SK Hynix Inc
Original Assignee
Hyundai Electronics Industries Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hyundai Electronics Industries Co Ltd filed Critical Hyundai Electronics Industries Co Ltd
Publication of GB0000354D0 publication Critical patent/GB0000354D0/en
Publication of GB2349249A publication Critical patent/GB2349249A/en
Withdrawn legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/789—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using non-volatile cells or latches
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring
    • G11C29/78—Masking faults in memories by using spares or by reconfiguring using programmable devices
    • G11C29/785—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes
    • G11C29/787—Masking faults in memories by using spares or by reconfiguring using programmable devices with redundancy programming schemes using a fuse hierarchy
GB0000354A 1999-01-09 2000-01-10 Repair circuit of a semiconductor memory device Withdrawn GB2349249A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR10-1999-0000347A KR100510995B1 (en) 1999-01-09 1999-01-09 Repair circuit of semiconductor device

Publications (2)

Publication Number Publication Date
GB0000354D0 true GB0000354D0 (en) 2000-03-01
GB2349249A GB2349249A (en) 2000-10-25

Family

ID=19570903

Family Applications (1)

Application Number Title Priority Date Filing Date
GB0000354A Withdrawn GB2349249A (en) 1999-01-09 2000-01-10 Repair circuit of a semiconductor memory device

Country Status (4)

Country Link
JP (1) JP2000207896A (en)
KR (1) KR100510995B1 (en)
GB (1) GB2349249A (en)
TW (1) TW459238B (en)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003007081A (en) 2001-06-25 2003-01-10 Mitsubishi Electric Corp Semiconductor integrated circuit device
US6704228B2 (en) * 2001-12-28 2004-03-09 Samsung Electronics Co., Ltd Semiconductor memory device post-repair circuit and method
JP4125542B2 (en) 2002-05-20 2008-07-30 エルピーダメモリ株式会社 Semiconductor memory device and manufacturing method thereof
KR100716660B1 (en) * 2004-05-06 2007-05-09 주식회사 하이닉스반도체 Semiconductor memory device
KR100728952B1 (en) * 2004-07-21 2007-06-15 주식회사 하이닉스반도체 Electrical fuse formation method of semiconductor device
JP2006228330A (en) 2005-02-17 2006-08-31 Toshiba Corp Semiconductor memory device
CN103366798B (en) * 2013-07-10 2016-02-17 格科微电子（上海）有限公司 Dynamic RAM and manufacture method, semiconductor package part and method for packing
KR102088343B1 (en) 2014-02-05 2020-03-12 삼성전자주식회사 Semiconductor memory device

Family Cites Families (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06295594A (en) * 1993-04-09 1994-10-21 Nippon Steel Corp Semiconductor storage device
KR960008826B1 (en) * 1993-12-15 1996-07-05 Hyundai Electronics Ind Redundancy circuit of semiconductor device
KR0140178B1 (en) * 1994-12-29 1998-07-15 김광호 Redundant cell of semiconductor memory device
KR0181204B1 (en) * 1995-08-31 1999-04-15 김광호 Self Repair Circuit of Semiconductor Memory Device
US5812468A (en) * 1995-11-28 1998-09-22 Micron Technology, Inc. Programmable device for redundant element cancel in a memory
US6188239B1 (en) * 1996-08-12 2001-02-13 Micron Technology, Inc. Semiconductor programmable test arrangement such as an antifuse to ID circuit having common access switches and/or common programming switches
KR100191775B1 (en) * 1996-08-16 1999-06-15 윤종용 Repair information storage and detection circuit of a semiconductor memory device
US5724282A (en) * 1996-09-06 1998-03-03 Micron Technology, Inc. System and method for an antifuse bank
US5838625A (en) * 1996-10-29 1998-11-17 Micron Technology, Inc. Anti-fuse programming path

Also Published As

Publication number Publication date
TW459238B (en) 2001-10-11
JP2000207896A (en) 2000-07-28
KR100510995B1 (en) 2005-08-31
GB2349249A (en) 2000-10-25
KR20000050454A (en) 2000-08-05

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Legal Events

Date Code Title Description
WAP Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1)