GB2344005B - Method of monitoring turbo pump operation in ion implantation apparatus for use in manufacturing semiconductors - Google Patents
Method of monitoring turbo pump operation in ion implantation apparatus for use in manufacturing semiconductorsInfo
- Publication number
- GB2344005B GB2344005B GB9825193A GB9825193A GB2344005B GB 2344005 B GB2344005 B GB 2344005B GB 9825193 A GB9825193 A GB 9825193A GB 9825193 A GB9825193 A GB 9825193A GB 2344005 B GB2344005 B GB 2344005B
- Authority
- GB
- United Kingdom
- Prior art keywords
- ion implantation
- pump operation
- implantation apparatus
- turbo pump
- manufacturing semiconductors
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
- 238000005468 ion implantation Methods 0.000 title 1
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 238000012544 monitoring process Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/304—Controlling tubes by information coming from the objects or from the beam, e.g. correction signals
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
- H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
- H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
- H01J2237/18—Vacuum control means
Landscapes
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Physical Vapour Deposition (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9825193A GB2344005B (en) | 1998-11-17 | 1998-11-17 | Method of monitoring turbo pump operation in ion implantation apparatus for use in manufacturing semiconductors |
US09/318,409 US6462331B1 (en) | 1998-11-17 | 1999-05-25 | Method for monitoring turbo pump operation in an ion implantation apparatus |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
GB9825193A GB2344005B (en) | 1998-11-17 | 1998-11-17 | Method of monitoring turbo pump operation in ion implantation apparatus for use in manufacturing semiconductors |
US09/318,409 US6462331B1 (en) | 1998-11-17 | 1999-05-25 | Method for monitoring turbo pump operation in an ion implantation apparatus |
Publications (3)
Publication Number | Publication Date |
---|---|
GB9825193D0 GB9825193D0 (en) | 1999-01-13 |
GB2344005A GB2344005A (en) | 2000-05-24 |
GB2344005B true GB2344005B (en) | 2000-12-27 |
Family
ID=26314687
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB9825193A Expired - Fee Related GB2344005B (en) | 1998-11-17 | 1998-11-17 | Method of monitoring turbo pump operation in ion implantation apparatus for use in manufacturing semiconductors |
Country Status (2)
Country | Link |
---|---|
US (1) | US6462331B1 (en) |
GB (1) | GB2344005B (en) |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100416811B1 (en) | 2001-04-27 | 2004-01-31 | 삼성전자주식회사 | High energy ion implanter for semiconductor device manufacture |
US6661017B1 (en) * | 2002-05-29 | 2003-12-09 | Ibis Technology Corporation | Ion implantation system having an energy probe |
KR100485385B1 (en) * | 2002-12-17 | 2005-04-27 | 삼성전자주식회사 | Charge exchanger and ion implanter having the same |
KR100533568B1 (en) * | 2004-07-15 | 2005-12-06 | 삼성전자주식회사 | High energy ion implanter having monitoring function about charge exchanging gas |
US8035080B2 (en) * | 2009-10-30 | 2011-10-11 | Axcelis Technologies, Inc. | Method and system for increasing beam current above a maximum energy for a charge state |
CN105097398A (en) * | 2015-08-26 | 2015-11-25 | 成都森蓝光学仪器有限公司 | Water cooling manner adopting annular hot cathode ion source neutralizer |
US20230139138A1 (en) * | 2021-10-29 | 2023-05-04 | Axcelis Technologies, Inc. | Charge filter magnet with variable achromaticity |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1108216A (en) * | 1965-09-30 | 1968-04-03 | Borg Warner | Control system for power units such as electric motors and the like |
US5300891A (en) * | 1992-05-01 | 1994-04-05 | Genus, Inc. | Ion accelerator |
US5598312A (en) * | 1993-06-01 | 1997-01-28 | Aerospatiale Societe Nationale Industrielle | Device for controlling a mechanism driven by a lens one electric motor |
GB2319909A (en) * | 1996-11-28 | 1998-06-03 | Gec Marconi Aerospace Limited | Monitoring operation of a three phase electric motor |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3353107A (en) | 1959-10-06 | 1967-11-14 | High Voltage Engineering Corp | High voltage particle accelerators using charge transfer processes |
US4018241A (en) * | 1974-09-23 | 1977-04-19 | The Regents Of The University Of Colorado | Method and inlet control system for controlling a gas flow sample to an evacuated chamber |
US4980556A (en) | 1988-04-29 | 1990-12-25 | Ionex/Hei Corporation | Apparatus for generating high currents of negative ions |
US5672882A (en) * | 1995-12-29 | 1997-09-30 | Advanced Micro Devices, Inc. | Ion implantation device with a closed-loop process chamber pressure control system |
JP3129226B2 (en) * | 1997-03-25 | 2001-01-29 | 日本電気株式会社 | Method of manufacturing field emission type cold cathode mounted device |
US6110322A (en) * | 1998-03-06 | 2000-08-29 | Applied Materials, Inc. | Prevention of ground fault interrupts in a semiconductor processing system |
US5959305A (en) * | 1998-06-19 | 1999-09-28 | Eaton Corporation | Method and apparatus for monitoring charge neutralization operation |
-
1998
- 1998-11-17 GB GB9825193A patent/GB2344005B/en not_active Expired - Fee Related
-
1999
- 1999-05-25 US US09/318,409 patent/US6462331B1/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1108216A (en) * | 1965-09-30 | 1968-04-03 | Borg Warner | Control system for power units such as electric motors and the like |
US5300891A (en) * | 1992-05-01 | 1994-04-05 | Genus, Inc. | Ion accelerator |
US5598312A (en) * | 1993-06-01 | 1997-01-28 | Aerospatiale Societe Nationale Industrielle | Device for controlling a mechanism driven by a lens one electric motor |
GB2319909A (en) * | 1996-11-28 | 1998-06-03 | Gec Marconi Aerospace Limited | Monitoring operation of a three phase electric motor |
Also Published As
Publication number | Publication date |
---|---|
GB2344005A (en) | 2000-05-24 |
US6462331B1 (en) | 2002-10-08 |
GB9825193D0 (en) | 1999-01-13 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 20091117 |