[go: up one dir, main page]

GB2199696B - Submerged storage plate memory cell - Google Patents

Submerged storage plate memory cell

Info

Publication number
GB2199696B
GB2199696B GB8729623A GB8729623A GB2199696B GB 2199696 B GB2199696 B GB 2199696B GB 8729623 A GB8729623 A GB 8729623A GB 8729623 A GB8729623 A GB 8729623A GB 2199696 B GB2199696 B GB 2199696B
Authority
GB
United Kingdom
Prior art keywords
memory cell
storage plate
plate memory
submerged storage
submerged
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Lifetime
Application number
GB8729623A
Other versions
GB2199696A (en
GB8729623D0 (en
Inventor
Daeje Chin
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Samsung Semiconductor Inc
Original Assignee
Samsung Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Samsung Semiconductor Inc filed Critical Samsung Semiconductor Inc
Publication of GB8729623D0 publication Critical patent/GB8729623D0/en
Publication of GB2199696A publication Critical patent/GB2199696A/en
Application granted granted Critical
Publication of GB2199696B publication Critical patent/GB2199696B/en
Anticipated expiration legal-status Critical
Expired - Lifetime legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/37—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/03—Making the capacitor or connections thereto
    • H10B12/038—Making the capacitor or connections thereto the capacitor being in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/33—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor extending under the transistor
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/39—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the capacitor and the transistor being in a same trench
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/62—Capacitors having potential barriers
    • H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
    • H10D1/665—Trench conductor-insulator-semiconductor capacitors, e.g. trench MOS capacitors

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Semiconductor Integrated Circuits (AREA)
GB8729623A 1987-01-06 1987-12-18 Submerged storage plate memory cell Expired - Lifetime GB2199696B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US74387A 1987-01-06 1987-01-06

Publications (3)

Publication Number Publication Date
GB8729623D0 GB8729623D0 (en) 1988-02-03
GB2199696A GB2199696A (en) 1988-07-13
GB2199696B true GB2199696B (en) 1990-11-14

Family

ID=21692832

Family Applications (1)

Application Number Title Priority Date Filing Date
GB8729623A Expired - Lifetime GB2199696B (en) 1987-01-06 1987-12-18 Submerged storage plate memory cell

Country Status (6)

Country Link
JP (1) JPS6453445A (en)
KR (1) KR880009439A (en)
DE (1) DE3744375A1 (en)
FR (1) FR2609350A1 (en)
GB (1) GB2199696B (en)
NL (1) NL8800007A (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5200354A (en) * 1988-07-22 1993-04-06 Hyundai Electronics Industries Co. Ltd. Method for manufacturing dynamic random access memory cell
KR910008830B1 (en) * 1988-08-18 1991-10-21 현대전자산업 주식회사 Trench sidewall doping method using oxide and nitride walls and semiconductor device
US5182224A (en) * 1988-09-22 1993-01-26 Hyundai Electronics Industries Co., Ltd. Method of making dynamic random access memory cell having a SDHT structure
KR910013554A (en) * 1989-12-08 1991-08-08 김광호 Semiconductor device and manufacturing method thereof
JP2994110B2 (en) * 1991-09-09 1999-12-27 株式会社東芝 Semiconductor storage device
US5528062A (en) * 1992-06-17 1996-06-18 International Business Machines Corporation High-density DRAM structure on soi
CN105957902A (en) * 2016-07-20 2016-09-21 无锡宏纳科技有限公司 Production method of deep-groove silicon capacitor with larger capacitance value

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0149799A2 (en) * 1984-01-20 1985-07-31 Kabushiki Kaisha Toshiba Semiconductor memory device
EP0177066A2 (en) * 1984-10-05 1986-04-09 Nec Corporation Semiconductor memory device with information storage vertical trench capacitor and method of manufacturing the same
EP0187237A2 (en) * 1984-12-07 1986-07-16 Texas Instruments Incorporated dRAM cell and method
EP0201706A2 (en) * 1985-04-01 1986-11-20 Nec Corporation Dynamic random access memory device having a plurality of improved one-transistor type memory cells

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE3477532D1 (en) * 1983-12-15 1989-05-03 Toshiba Kk Semiconductor memory device having trenched capacitor
DE3780840T2 (en) * 1986-03-03 1993-03-25 Fujitsu Ltd DYNAMIC MEMORY CONTAINING A GROOVE CAPACITOR WITH OPTIONAL ACCESS.

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0149799A2 (en) * 1984-01-20 1985-07-31 Kabushiki Kaisha Toshiba Semiconductor memory device
EP0177066A2 (en) * 1984-10-05 1986-04-09 Nec Corporation Semiconductor memory device with information storage vertical trench capacitor and method of manufacturing the same
EP0187237A2 (en) * 1984-12-07 1986-07-16 Texas Instruments Incorporated dRAM cell and method
EP0201706A2 (en) * 1985-04-01 1986-11-20 Nec Corporation Dynamic random access memory device having a plurality of improved one-transistor type memory cells

Also Published As

Publication number Publication date
GB2199696A (en) 1988-07-13
JPS6453445A (en) 1989-03-01
FR2609350A1 (en) 1988-07-08
GB8729623D0 (en) 1988-02-03
DE3744375A1 (en) 1988-07-14
NL8800007A (en) 1988-08-01
KR880009439A (en) 1988-09-15

Similar Documents

Publication Publication Date Title
GB2201287B (en) Solid state cell electrolyte
EP0142029A3 (en) Storage cells connection
ZA888942B (en) Electrochemical cell
GB2214344B (en) Electrochemical cell
EP0142030A3 (en) Electrochemical storage cell
ZA884595B (en) Electrochemical cell
EP0141353A3 (en) Electrochemical storage cell
GB2199696B (en) Submerged storage plate memory cell
GB8518661D0 (en) Electro-chemical storage cell
GB8416781D0 (en) Access memory cell
GB8700347D0 (en) Memory cell
GB8619744D0 (en) Storage cells
GB8727249D0 (en) Accessing memory cells
GB2210727B (en) Electrochemical cell
EP0193768A3 (en) Electrochemical storage cell
GB2213310B (en) Electrochemical cell
GB8819240D0 (en) Electrochemical cell
EP0187305A3 (en) Electrochemical storage cell
GB2213311B (en) Electrochemical cell
IL87926A0 (en) Electrochemical cell
GB2201031B (en) Electrochemical cells
GB8815181D0 (en) Electrical storage cell
GB8430492D0 (en) Storage cell
GB8703736D0 (en) Solid state cell electrolyte
GB8720140D0 (en) Solid state cell electrolyte

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee