GB2199594B - Vapor deposition growth of group ii-vi semiconductor materials - Google Patents
Vapor deposition growth of group ii-vi semiconductor materialsInfo
- Publication number
- GB2199594B GB2199594B GB8729380A GB8729380A GB2199594B GB 2199594 B GB2199594 B GB 2199594B GB 8729380 A GB8729380 A GB 8729380A GB 8729380 A GB8729380 A GB 8729380A GB 2199594 B GB2199594 B GB 2199594B
- Authority
- GB
- United Kingdom
- Prior art keywords
- group
- vapor deposition
- semiconductor materials
- deposition growth
- growth
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
- C30B25/02—Epitaxial-layer growth
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/10—Inorganic compounds or compositions
- C30B29/46—Sulfur-, selenium- or tellurium-containing compounds
- C30B29/48—AIIBVI compounds wherein A is Zn, Cd or Hg, and B is S, Se or Te
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Inorganic Chemistry (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Vapour Deposition (AREA)
- Led Devices (AREA)
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US94323886A | 1986-12-18 | 1986-12-18 |
Publications (3)
Publication Number | Publication Date |
---|---|
GB8729380D0 GB8729380D0 (en) | 1988-01-27 |
GB2199594A GB2199594A (en) | 1988-07-13 |
GB2199594B true GB2199594B (en) | 1991-08-07 |
Family
ID=25479292
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
GB8729380A Expired - Fee Related GB2199594B (en) | 1986-12-18 | 1987-12-16 | Vapor deposition growth of group ii-vi semiconductor materials |
Country Status (5)
Country | Link |
---|---|
JP (1) | JPS63198336A (en) |
CA (1) | CA1319587C (en) |
DE (1) | DE3743132A1 (en) |
FR (1) | FR2608637A1 (en) |
GB (1) | GB2199594B (en) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2078695A (en) * | 1980-05-27 | 1982-01-13 | Secr Defence | Cadmium Mercury Telluride Deposition |
GB2130189A (en) * | 1982-10-19 | 1984-05-31 | Secr Defence | Vapour deposition of films |
GB2146663A (en) * | 1983-09-13 | 1985-04-24 | Secr Defence | Manufacture of cadmium mercury telluride |
GB2193228A (en) * | 1986-06-20 | 1988-02-03 | Raytheon Co | Low temperature metalorganic chemical vapor deposition growth of group ii-vi semiconductor materials |
Family Cites Families (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE3168017D1 (en) * | 1980-05-27 | 1985-02-14 | Secr Defence Brit | Manufacture of cadmium mercury telluride |
-
1987
- 1987-12-11 CA CA000554073A patent/CA1319587C/en not_active Expired - Fee Related
- 1987-12-16 GB GB8729380A patent/GB2199594B/en not_active Expired - Fee Related
- 1987-12-18 FR FR8717757A patent/FR2608637A1/en not_active Withdrawn
- 1987-12-18 DE DE19873743132 patent/DE3743132A1/en not_active Withdrawn
- 1987-12-18 JP JP62321177A patent/JPS63198336A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB2078695A (en) * | 1980-05-27 | 1982-01-13 | Secr Defence | Cadmium Mercury Telluride Deposition |
GB2130189A (en) * | 1982-10-19 | 1984-05-31 | Secr Defence | Vapour deposition of films |
GB2146663A (en) * | 1983-09-13 | 1985-04-24 | Secr Defence | Manufacture of cadmium mercury telluride |
GB2193228A (en) * | 1986-06-20 | 1988-02-03 | Raytheon Co | Low temperature metalorganic chemical vapor deposition growth of group ii-vi semiconductor materials |
Non-Patent Citations (4)
Title |
---|
Appl. Phys. Lett. 46(4)15th. Feb 1985 p * |
Appl. Phys. Lett. 48(24)16th. June 1986, * |
p. 398-400 * |
pp. 1669-1671 * |
Also Published As
Publication number | Publication date |
---|---|
GB2199594A (en) | 1988-07-13 |
GB8729380D0 (en) | 1988-01-27 |
JPS63198336A (en) | 1988-08-17 |
CA1319587C (en) | 1993-06-29 |
DE3743132A1 (en) | 1988-07-21 |
FR2608637A1 (en) | 1988-06-24 |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PCNP | Patent ceased through non-payment of renewal fee |
Effective date: 19931216 |