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GB2168080B - Vapour deposition apparatus and epitaxial layer growth methods - Google Patents

Vapour deposition apparatus and epitaxial layer growth methods

Info

Publication number
GB2168080B
GB2168080B GB08529157A GB8529157A GB2168080B GB 2168080 B GB2168080 B GB 2168080B GB 08529157 A GB08529157 A GB 08529157A GB 8529157 A GB8529157 A GB 8529157A GB 2168080 B GB2168080 B GB 2168080B
Authority
GB
United Kingdom
Prior art keywords
epitaxial layer
deposition apparatus
vapour deposition
layer growth
growth methods
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08529157A
Other versions
GB2168080A (en
GB8529157D0 (en
Inventor
Keiichi Yoneyama
Kikuo Kaise
Masaaki Ayabe
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of GB8529157D0 publication Critical patent/GB8529157D0/en
Publication of GB2168080A publication Critical patent/GB2168080A/en
Application granted granted Critical
Publication of GB2168080B publication Critical patent/GB2168080B/en
Expired legal-status Critical Current

Links

Classifications

    • H01L21/205—
    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
    • C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
    • C30B25/00—Single-crystal growth by chemical reaction of reactive gases, e.g. chemical vapour-deposition growth
    • C30B25/02—Epitaxial-layer growth
    • C30B25/12—Substrate holders or susceptors
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4587—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically
    • C23C16/4588—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially vertically the substrate being rotated

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)
  • Recrystallisation Techniques (AREA)
GB08529157A 1984-11-27 1985-11-27 Vapour deposition apparatus and epitaxial layer growth methods Expired GB2168080B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP59250243A JPH0639358B2 (en) 1984-11-27 1984-11-27 Metalorganic vapor phase growth equipment

Publications (3)

Publication Number Publication Date
GB8529157D0 GB8529157D0 (en) 1986-01-02
GB2168080A GB2168080A (en) 1986-06-11
GB2168080B true GB2168080B (en) 1988-05-11

Family

ID=17204968

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08529157A Expired GB2168080B (en) 1984-11-27 1985-11-27 Vapour deposition apparatus and epitaxial layer growth methods

Country Status (6)

Country Link
JP (1) JPH0639358B2 (en)
KR (1) KR940011099B1 (en)
DE (1) DE3541962C2 (en)
FR (1) FR2573917B1 (en)
GB (1) GB2168080B (en)
NL (1) NL8503293A (en)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2582552B2 (en) * 1986-05-29 1997-02-19 三菱電機株式会社 Ion implanter
JPS63144513A (en) * 1986-12-09 1988-06-16 Nkk Corp Barrel type epitaxial growth device
US5002011A (en) * 1987-04-14 1991-03-26 Kabushiki Kaisha Toshiba Vapor deposition apparatus
US4858558A (en) * 1988-01-25 1989-08-22 Nippon Kokan Kabushiki Kaisha Film forming apparatus
US5558721A (en) * 1993-11-15 1996-09-24 The Furukawa Electric Co., Ltd. Vapor phase growth system and a gas-drive motor
US5776256A (en) * 1996-10-01 1998-07-07 The United States Of America As Represented By The Secretary Of The Air Force Coating chamber planetary gear mirror rotating system
DE10261362B8 (en) * 2002-12-30 2008-08-28 Osram Opto Semiconductors Gmbh Substrate holder
CN100529171C (en) * 2005-07-21 2009-08-19 林泓庆 Plated object holding device of physical vapor deposition evaporator
US7182814B1 (en) * 2005-08-12 2007-02-27 Hong-Cing Lin Sample holder for physical vapor deposition equipment
KR100790729B1 (en) * 2006-12-11 2008-01-02 삼성전기주식회사 Chemical vapor deposition apparatus
JP5394092B2 (en) * 2009-02-10 2014-01-22 東洋炭素株式会社 CVD equipment
TW201333255A (en) * 2011-10-14 2013-08-16 Toyo Tanso Co Cvd device, method for manufacturing susceptor in which cvd device is used, and susceptor

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3598083A (en) * 1969-10-27 1971-08-10 Varian Associates Complex motion mechanism for thin film coating apparatuses
US3690290A (en) * 1971-04-29 1972-09-12 Motorola Inc Apparatus for providing epitaxial layers on a substrate
JPS5145337B2 (en) * 1971-05-21 1976-12-03
CA956999A (en) * 1971-08-26 1974-10-29 Leland B. Wagner Pressure responsive device having stacked diaphragm assembly
JPS4841669A (en) * 1971-09-28 1973-06-18
JPS5019015U (en) * 1973-06-14 1975-03-03
CH599982A5 (en) * 1975-09-02 1978-06-15 Balzers Patent Beteilig Ag

Also Published As

Publication number Publication date
DE3541962A1 (en) 1986-06-12
FR2573917A1 (en) 1986-05-30
KR860004456A (en) 1986-06-23
GB2168080A (en) 1986-06-11
DE3541962C2 (en) 1993-11-11
GB8529157D0 (en) 1986-01-02
JPS61127696A (en) 1986-06-14
FR2573917B1 (en) 1989-03-17
NL8503293A (en) 1986-06-16
JPH0639358B2 (en) 1994-05-25
KR940011099B1 (en) 1994-11-23

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee