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GB2157884B - Photoemissive cathode for high current density photoelectron generators - Google Patents

Photoemissive cathode for high current density photoelectron generators

Info

Publication number
GB2157884B
GB2157884B GB08511180A GB8511180A GB2157884B GB 2157884 B GB2157884 B GB 2157884B GB 08511180 A GB08511180 A GB 08511180A GB 8511180 A GB8511180 A GB 8511180A GB 2157884 B GB2157884 B GB 2157884B
Authority
GB
United Kingdom
Prior art keywords
photoelectron
generators
current density
high current
photoemissive cathode
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08511180A
Other versions
GB8511180D0 (en
GB2157884A (en
Inventor
Peter E Oettinger
Chunghsin Lee
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Thermo Fisher Scientific Inc
Original Assignee
Thermo Electron Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Thermo Electron Corp filed Critical Thermo Electron Corp
Publication of GB8511180D0 publication Critical patent/GB8511180D0/en
Publication of GB2157884A publication Critical patent/GB2157884A/en
Application granted granted Critical
Publication of GB2157884B publication Critical patent/GB2157884B/en
Expired legal-status Critical Current

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J1/00—Details of electrodes, of magnetic control means, of screens, or of the mounting or spacing thereof, common to two or more basic types of discharge tubes or lamps
    • H01J1/02—Main electrodes
    • H01J1/34—Photo-emissive cathodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement or ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J9/00—Apparatus or processes specially adapted for the manufacture, installation, removal, maintenance of electric discharge tubes, discharge lamps, or parts thereof; Recovery of material from discharge tubes or lamps
    • H01J9/02—Manufacture of electrodes or electrode systems
    • H01J9/12—Manufacture of electrodes or electrode systems of photo-emissive cathodes; of secondary-emission electrodes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3423—Semiconductors, e.g. GaAs, NEA emitters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2201/00—Electrodes common to discharge tubes
    • H01J2201/34—Photoemissive electrodes
    • H01J2201/342—Cathodes
    • H01J2201/3421—Composition of the emitting surface
    • H01J2201/3426—Alkaline metal compounds, e.g. Na-K-Sb
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/061—Construction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/06—Sources
    • H01J2237/063—Electron sources
    • H01J2237/06325—Cold-cathode sources
    • H01J2237/06333—Photo emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31779—Lithography by projection from patterned photocathode

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Analytical Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Electron Beam Exposure (AREA)
  • Electron Sources, Ion Sources (AREA)
  • Lasers (AREA)
  • Common Detailed Techniques For Electron Tubes Or Discharge Tubes (AREA)
GB08511180A 1981-11-30 1985-05-02 Photoemissive cathode for high current density photoelectron generators Expired GB2157884B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US32596081A 1981-11-30 1981-11-30

Publications (3)

Publication Number Publication Date
GB8511180D0 GB8511180D0 (en) 1985-06-12
GB2157884A GB2157884A (en) 1985-10-30
GB2157884B true GB2157884B (en) 1986-07-23

Family

ID=23270181

Family Applications (2)

Application Number Title Priority Date Filing Date
GB08231900A Expired GB2111299B (en) 1981-11-30 1982-11-09 High current density photoelectron generators
GB08511180A Expired GB2157884B (en) 1981-11-30 1985-05-02 Photoemissive cathode for high current density photoelectron generators

Family Applications Before (1)

Application Number Title Priority Date Filing Date
GB08231900A Expired GB2111299B (en) 1981-11-30 1982-11-09 High current density photoelectron generators

Country Status (4)

Country Link
JP (2) JPS58108639A (en)
DE (1) DE3241766C2 (en)
FR (1) FR2517470B1 (en)
GB (2) GB2111299B (en)

Families Citing this family (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6037633A (en) * 1983-08-09 1985-02-27 Hamamatsu Photonics Kk Photoelectron gun
US4606061A (en) * 1983-12-28 1986-08-12 Tokyo Shibaura Denki Kabushiki Kaisha Light controlled x-ray scanner
GB8422895D0 (en) * 1984-09-11 1984-10-17 Texas Instruments Ltd Electron beam apparatus
KR910000756B1 (en) * 1984-11-20 1991-02-06 Fujitsu Ltd Method for projection photoelectron image
GB8506788D0 (en) * 1985-03-15 1985-04-17 Secr Defence Thermal electron source
JPS6347928A (en) * 1986-08-18 1988-02-29 Fujitsu Ltd Mask for photoelectron image transfer
US4963823A (en) * 1988-06-27 1990-10-16 Siemens Aktiengesellschaft Electron beam measuring instrument
DE68916870D1 (en) * 1988-07-01 1994-08-25 Ibm Optical fiber photocathode.
GB2260666B (en) * 1991-09-20 1995-12-20 Sharp Kk Time division multiplexed diode lasers
US5684360A (en) * 1995-07-10 1997-11-04 Intevac, Inc. Electron sources utilizing negative electron affinity photocathodes with ultra-small emission areas
JPH0936025A (en) * 1995-07-14 1997-02-07 Nec Corp Method and apparatus for electron beam exposure
US6538256B1 (en) 2000-08-17 2003-03-25 Applied Materials, Inc. Electron beam lithography system using a photocathode with a pattern of apertures for creating a transmission resonance
DE10245052A1 (en) * 2002-09-26 2004-04-08 Leo Elektronenmikroskopie Gmbh Electron beam source and electron optical apparatus with one
CN100394654C (en) * 2003-01-16 2008-06-11 松下电器产业株式会社 Photoelectronic discharge plate and negative particle generator charged clear device and the like equipment using the plate
US7187755B2 (en) * 2004-11-02 2007-03-06 General Electric Company Electron emitter assembly and method for generating electron beams
US10052794B2 (en) * 2012-11-09 2018-08-21 Command Alkon Dutch Tech B.V. Methods and systems using concrete mix temperature measurement
JP6664223B2 (en) * 2016-01-12 2020-03-13 株式会社荏原製作所 Electron gun and inspection device having the same
JP6867568B2 (en) * 2016-11-07 2021-04-28 国立大学法人東京工業大学 Nanoscale photocathode electron source

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB812403A (en) * 1954-08-06 1959-04-22 Emi Ltd Improvements in or relating to the formation of evaporated layers
GB714054A (en) * 1950-03-17 1954-08-25 Emi Ltd Improvements relating to the manufacture of photo-electric devices
GB1005708A (en) * 1960-12-14 1965-09-29 Emi Ltd Improvements relating to photo electrically sensitive devices
CH391912A (en) * 1961-11-09 1965-05-15 Trueb Taeuber & Co Ag Process for visualization and recording of electron-optical images
FR1345063A (en) * 1962-10-23 1963-12-06 Thomson Houston Comp Francaise Photoelectric cathode
DE1464594A1 (en) * 1963-07-18 1968-12-19 Forschungslaboratorium Dr Ing Photocathode
GB1117759A (en) * 1964-12-16 1968-06-26 Matsushita Electric Ind Co Ltd Photoemissive device
US4097761A (en) * 1966-02-16 1978-06-27 Rca Corporation Image tube cathode
FR1556109A (en) * 1967-03-10 1969-01-31
FR1566316A (en) * 1968-01-31 1969-05-09
DE1963740A1 (en) * 1969-12-19 1971-07-08 Max Planck Gesellschaft Pulse electron source
FR2076604A5 (en) * 1970-01-21 1971-10-15 Commissariat Energie Atomique
US3821778A (en) * 1972-12-04 1974-06-28 Hughes Aircraft Co Infrared photocathode
JPS573182B2 (en) * 1973-08-08 1982-01-20
JPS5224385A (en) * 1975-08-20 1977-02-23 Sanki Eng Co Ltd Single filter press
US4039810A (en) * 1976-06-30 1977-08-02 International Business Machines Corporation Electron projection microfabrication system
DE2719799A1 (en) * 1977-04-28 1978-11-02 Siemens Ag Mask imaging photoelectronic projector - has mask as positive electrode of acceleration field between photocathode and semiconductor wafer
JPS5469953A (en) * 1977-11-15 1979-06-05 Toshiba Corp Electron emission device
JPS54146952A (en) * 1978-05-10 1979-11-16 Hitachi Denshi Ltd Photoelectric surface
US4313072A (en) * 1979-10-10 1982-01-26 The United States Of America As Represented By The United States Department Of Energy Light modulated switches and radio frequency emitters

Also Published As

Publication number Publication date
GB8511180D0 (en) 1985-06-12
FR2517470B1 (en) 1989-01-20
GB2111299B (en) 1986-07-09
DE3241766C2 (en) 1987-04-09
DE3241766A1 (en) 1983-06-09
JPS58108639A (en) 1983-06-28
JPH03176953A (en) 1991-07-31
GB2111299A (en) 1983-06-29
GB2157884A (en) 1985-10-30
FR2517470A1 (en) 1983-06-03

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee

Effective date: 19921109