GB2139744A - Apparatus for firing semiconductor elements - Google Patents
Apparatus for firing semiconductor elements Download PDFInfo
- Publication number
- GB2139744A GB2139744A GB08410684A GB8410684A GB2139744A GB 2139744 A GB2139744 A GB 2139744A GB 08410684 A GB08410684 A GB 08410684A GB 8410684 A GB8410684 A GB 8410684A GB 2139744 A GB2139744 A GB 2139744A
- Authority
- GB
- United Kingdom
- Prior art keywords
- transporter
- elements
- container
- fired
- chamber
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 238000010304 firing Methods 0.000 title claims abstract description 20
- 239000004065 semiconductor Substances 0.000 title claims abstract description 13
- 238000009792 diffusion process Methods 0.000 claims abstract description 25
- 238000010438 heat treatment Methods 0.000 claims abstract description 13
- 230000008093 supporting effect Effects 0.000 claims abstract description 8
- 235000012431 wafers Nutrition 0.000 description 28
- 239000012535 impurity Substances 0.000 description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 239000002019 doping agent Substances 0.000 description 4
- 238000003780 insertion Methods 0.000 description 4
- 230000037431 insertion Effects 0.000 description 4
- 238000005096 rolling process Methods 0.000 description 4
- 238000000034 method Methods 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
- 229910052710 silicon Inorganic materials 0.000 description 3
- 239000010703 silicon Substances 0.000 description 3
- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- 239000000969 carrier Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 239000002253 acid Substances 0.000 description 1
- 238000013019 agitation Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000001627 detrimental effect Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 229910052732 germanium Inorganic materials 0.000 description 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011819 refractory material Substances 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67754—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a batch of workpieces
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/10—Reaction chambers; Selection of materials therefor
- C30B31/103—Mechanisms for moving either the charge or heater
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F27—FURNACES; KILNS; OVENS; RETORTS
- F27B—FURNACES, KILNS, OVENS OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
- F27B17/00—Furnaces of a kind not covered by any of groups F27B1/00 - F27B15/00
- F27B17/0016—Chamber type furnaces
- F27B17/0025—Chamber type furnaces specially adapted for treating semiconductor wafers
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Metallurgy (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- General Physics & Mathematics (AREA)
- Organic Chemistry (AREA)
- Mechanical Engineering (AREA)
- General Engineering & Computer Science (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
- Silicon Compounds (AREA)
- Tunnel Furnaces (AREA)
- Furnace Details (AREA)
Abstract
An apparatus for firing semiconductor elements and the like having heating means (34) and a diffusion chamber (16) for enclosing the elements to be fired, which comprises a container (18) defined by a wall (22) having an open end (28) for receiving the elements to be fired. A transporter (14) carries said semiconductor elements, and a conveyor (30) supports said transporter, said transporter being mounted on said conveyor to project therefrom like a cantilever beam with the free end of said cantilever beam disposed opposite said open end (28) of said counter, and said transporter and the elements to be fired being configurated such that the free end of the transporter can pass through said open end to position the elements within said container without any portion of said transporter or the elements coming in contact with said wall (22) that defines the container, and said transporter supporting said elements while they are being fired, wherein either said conveyor and said transporter or said diffusion chamber and said heating means are moveable so as to position the elements on the transporter to be fired within said container. <IMAGE>
Description
SPECIFICATION Apparatusforfiring semiconductor elements This invention relates to an apparatusforthefiring of diodes, semiconductorwafers of silicon orgermanium and the like to produce controlled diffusion of or doping ofthewafers.
U.S. Patents 3,183,130 and 3,951,587 each describe an apparatusforfiring semiconductorwafers that are first enclosed within a chamber that is slid over a stack of the wafers to be treated. The wafers are suitably prepared for firing and then the diffusion enclosure or housing is slid overthe stack with the probability of the housing and wafer support being rubbed together as the interfit is completed.The possibility exists that asthesolid portionsofthe housing andthewafer support come into contact one with another, that one or more particles of other impurities will be rubbedfreefromoneelementortheotherto be dispersed in the atmosphere within the housing to possibly come in direct contact with the surface of one or more ofthewafers. When an unwanted impurity is in contact with a wafer when it is fired, it is apt to produce an undesirable diffusion of that impurity in thefinal product The presence of unwanted impurities in a fired wafer is usually detrimental to the pe formance of the wafer and is the cause for its rejection.
U.S. Patents 3,570,827 and 3,705,714 show wheel supported carriers for wafers to be fired that are adaptedto be pushed directly into a firing chamber.
Any semiconductor product to be fired that is exposed on the upper surface of either of the carriers ofthese structures runs the risk of being exposed to particles ofimpu rities floated into the atmosphere of the firing chamber by the action ofthe rolling wheels thatsupportthe carrier moving along the floor ofthe furnace. Such a possible dispersion of impurities into the atmosphere and onto the surfaces of the product being fired may cause unwanted rejection of improperlydoped product.
U.S. Patent 3,811,829 describes a typical firing cycle for producing semiconductors of the type with which the present invention is concerned, but includes no description of how the boat for supporting the wafers is constructed nor is there any description of a loading procedure for delivering a loaded wafer carrying boat into a chamberto be fired.
According to the present invention there is provided an apparatusforfiring semiconductor elements and the like having heating meansforfiring the elements and a diffusion chamberfor enclosing the elements to be fired, wherein said diffusion chamber comprises a container defined by a wall having an open end for receiving the elements to befired,said heating means cooperating with said chamberfor heating thesemi- conductor elements disposed in said chambertotheir firing temperature, a transporterforcarrying said semiconductor elements, and a conveyorfor support- ing said transporter, said transporter being mounted on said conveyorto projecttherefrom like a cantilever beam with the free end of said cantilever beam disposed opposite said open end of said container, and said transporter and the elements to be fired that are carried thereon being configurated such that the free end of the transporter can pass through said open end to position the elements on the transporterto be fired within said container without any portion of said transporter orthe elements carried thereon coming in contact with said wall that defines the container, and said transporter supporting said elements while they are being fired, wherein either said conveyor and said transporter or said diffusion chamber and said heating means are moveable so asto position the elements on the transporterto be fired within said container.
The apparatus here shown is designed to support a plurality of wafers such as silicon wafers or the like on means to carrythe wafers into a diffusion chamberto be subjected to a particular atmosphere and fired in a mannerto minimize, in so far as possible, the creation andlorstirring-up of any impurities. It is an object of this invention to provide an apparatus in which the atmosphere within the firing chamber is maintained in as pure a condition as is possible whereby a more perfect, uncontaminated diffusion of the doping agent or agents within the individual wafers can be effected.
More particularly, the carrier means or transporter here disclosed for supporting the productto be doped, has been designed to be mounted in a cantilever fashion from a moveable conveyorthat permits an insertion ofthe carrier endwise into the firing and diffusion zone. The insertion of the wafer carrying meansinto the firing zone is accomplished without there being any rubbing or rolling contact between the wafertransporterandthewall or floor of the firing chamberwhich eliminates all possibility of creating andlor raising any imperceptible particles of impurities that might otherwise be created and/orstirred-up and dispersed in the atmospherewithinthefiring chamber.By eliminating the necessity for having a rubbing or rolling contact between the wafer carrier and the wall of its diffusion chamber, a more perfect firing of the wafers can be performed while at the same time simplifying the furnacing structure.
The so-called conveyorforthe carrier means maybe slidably mounted on a fixed support with the furnace in a fixed relation thereto, so as to allow insertion and removal of the carrier means in the firing zone, free of contact with the wal Is of the latter. Alternatively, the conveyor means may be a wheeled device, preferably in a set of tracks or ball bearing guides, which would allow the carrier means attached to the wheeled device or conveyor to be rolled in and out of the furnace. In still a furthervariant, the conveyor and carrying means may be permanently and rigidly fastened to one another and in turn permanently and rigidly fastened to a su pport, with the furnace moveably mounted.
With reference to the accompanying drawings, Fig.
1 shows a broken awayvertical section through the wafertransport means, the diffusion chamber and furnace combination ofthis invention; and
Fig. 2 is a viewtaken on line 2-2 of Fig. 1.
The firing of semiconductor elements such as germanium crystals, silicon chips, diodes and the like to effectthedoping thereof is conventionally accomplished as shown in several ofthe patents listed above. A series of wafers or chips to be doped are supported on or are carried on a means that is mounted on a conveyor ortransporterfor movement lengthwise into an elongated furnacing chamber. The diffusion chamber is positioned within a furnace, that may be ofthe resistance heatertype, to raise the temperature of the product to be fired to the desired range in order that a dopant may be introduced into the product and then after a suitable diffussion has been completed,thewafersorchipsarewithdrawn from the furnace and cooled.
In the present apparatus, a boat 10 having a plurality of wafers 1 2 stacked therein in a parallel arrangement, is carried on a transporter 14. The transporter includes a rigid elongated body that is configured to be moved endwise into the diffusion chamber 16 within the diffusion container 18 without any portion of the transporter or boat or wafers coming in contact with the wall defining chamber 16. As best seen in Fig. 2 the transporter preferably has a rounded bottom 20 that is spaced from and substantially concentric with wall 22 that defines chamber 16 and the transporter has a concavetopsurface 24for a supporting boatorboats 10 and the wafers positioned in the boats so that the wafers are spaced from the walls of the chamber.A transporter of such a design may be made of a non-porous inert refractory such as, for example, silicon carbide or silicon nitride material as is well known, the transporter having a smooth configuration that may be easily cleaned and washed with acid to eliminate surfacecontaminates.
The container 18 is provided with an inlet passage 26to feed a gaseous atmosphere into the chamber 16 during the firing process as is taught in patent 3,183,i30forexample,and has an open end 28 through which the transporter 14 and its boat load of wafers may be delivered longitudinally into the chamber 16. In order to move the transporter into the
chamber it is supported from a longitudinally movable conveyor means 30 in a fixed manner so that the transporter 14 in effect forms a cantilever beam.When the conveyor is moved toward the diffusion chamber 16,thefreebeam endofthecantilevertransporter moves longitudinally into the open end 28 of the chamber and continuesto move lengthwise intothe container 18to carrythe loaded boat or boats 10 into the diffusion chamberwithout any portion of the transporter orthe wafers in the boats carried thereon coming in contactwith wall 22 of chamber 16. When the free end of the transporter has been moved inwardlyto near, but not in a touching position nextto the inlet 26, a cover 32 integral with the transporter is moved into positionto closetheopen end 28 of chamber 16.It is seen thatthe transporter 14 and its boat load of wafers is thus positioned entirely within the diffusion chamber, the wafers having been positioned within the diffusion chamber orthe cantilever beam transporter 14 without there being any possibility of an undue agitation such as might otherwise be produced by a rolling or rubbing contact ofthetransporterand its boat load of wafers with the apparatus asthetransporter is moved into the chamber.
Afterthe diffusion chamber 16 has been loaded, the doping process can be accomplished as is known, wherein energy is supplied to the induction heating means 34to raise the wafers to the desired firing temperature. A gaseous component may be blown through the entrance opening 26 through chamber 16 and outthe exit vent 36 to control the atmosphere within the chamber and eliminate any gaseous impurities and provide a dopant if desired, the excess gas continues to flow out of chamber 16through exit passage 36 in cover 32 atthe end 28 ofthe container 18. Afterthe firing cycle has been completed, the wafers are withdrawn from the chamber and cooled.
As is known the boat 10,container 18, the transporter 14, and other elements ofthis furnace may be made of a non-porous recrystallized silicon carbide impregnated with silicon, or silicon nitride or any other inert high temperature refractory material that will not creep, sag or distort in use and which is capable of withstanding the thermal shock created by insertion and removal from thelurnace.
The structure of conveyor 30 is not critical since this portion of the apparatus is in a room temperature environment. The conveyor need be only a driven element having a precisely controlled path of move mentto support and direct the cantilevertransporter 14 into chamber 16 without any deviation from a designed path whereby to ensure that neither the transporter nor its load hasanycontactwiththewall 22 of chamber 16 during the loading or firing steps.
Claims (12)
1. An apparatusforfiring semiconductor elements and the like having heating means forfiring the elements and a diffusion chamberfor enclosing the elements to befired, wherein said diffusion chamber comprises a container defined by a wall having an open end for receiving the elements to be fired, said heating means cooperating with said chamber for heating the semiconductor elements disposed in said chamberto their firing temperature, a transporter for carrying said semiconductor elements, and a con veyorfor supporting said transporter, said transporter being mounted on said conveyorto project therefrom like a cantilever beam with the free end of said cantilever beam disposed opposite said open end of said container, and said transporter and the elements to be fired that are carried thereon being configurated such that the free end of the transporter can pass through said open end to position the elements on the transporterto be fired within said container without any portion of said transporter or the elements carried thereon coming in contactwithsaidwallthatdefines the container, and said transporter supporting said elements while they are being fired, wherein either said conveyor and said transporter or said diffusion chamberandsaid heating means are movableso asto position the elements on the transporterto be fired within said container
2.An apparatus according to claim 1, wherein said conveyor is moveable toward and away from the open inlet of said chamber and the transporter can be moved into and remain in said container.
3. An apparatus according to claim 1, wherein said conveyor is directed toward the open end of said chamber and said heating means and diffusion chamber may be moved relative to said transporter.
4. An apparatus according to any one of the preceding claims, wherein said container is elongated and said transporter is an equally elongated device wherebythe elements on said transporter can be positioned throughout the length of said container.
5. An apparatus according to any one of the preceding claims, wherein said transporter carries a boat means loaded with elements to be fired.
6 6. An apparatus according to claim 5, wherein said boat means is elongated.
7. An apparatus according to any one of the preceding claims, wherein said container has an inlet passage and means to supply a gaseous flowto said inlet passage to circulate through said container to said open end.
8. An apparatus according to any ofthe preceding claims, wherein said transporter includes a cover meansforcovering said open end of said container, said cover including an outletpassageforpermitting circulation of said gaseous flowfrom the interior of said container.
9. An apparatus according to any one of the preceding claims, wherein said conveyor is slidably mounted on a support.
10. An apparatus according to any one ofthe preceding claims, wherein said conveyor is a wheeled device.
11. An apparatus according to claim 10, wherein said wheeled device travels in a set of bearing guides.
12. An apparatus for firing semiconductor heating elements substantially as herein described with reference to the accompanying drawings.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US49385983A | 1983-05-12 | 1983-05-12 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| GB8410684D0 GB8410684D0 (en) | 1984-05-31 |
| GB2139744A true GB2139744A (en) | 1984-11-14 |
Family
ID=23961990
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB08410684A Withdrawn GB2139744A (en) | 1983-05-12 | 1984-04-26 | Apparatus for firing semiconductor elements |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JPS59208824A (en) |
| DE (2) | DE3417579A1 (en) |
| FR (1) | FR2545985A1 (en) |
| GB (1) | GB2139744A (en) |
| NL (1) | NL8401408A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0327718A2 (en) * | 1988-02-11 | 1989-08-16 | Heinrich Dr. Söhlbrand | Method and device for the temperature treatment of semiconductor materials |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE3840588C1 (en) * | 1988-12-02 | 1990-02-22 | Westdeutsche Quarzschmelze Gmbh & Co. Kg, 2054 Geesthacht, De | Quartz glass container for the thermal treatment of semiconductor wafers |
| DE102012008213A1 (en) * | 2012-02-02 | 2013-08-08 | Photonic Sense GmbH | Method for continuous treatment of semiconductor and metal, involves measuring and analyzing fuel parameter data to perform continuous process on material, after inserting material to be treated with substance in induction zones |
| CN112391615A (en) * | 2019-10-23 | 2021-02-23 | 深圳市拉普拉斯能源技术有限公司 | Boat transportation structure based on double paddles |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1153372A (en) * | 1966-06-21 | 1969-05-29 | Associated Semiconductor Mft | Improvements in or relating to Methods of Heat Treating Semiconductor Bodies. |
| GB2091398A (en) * | 1981-01-17 | 1982-07-28 | Kloeckner Ionon | Apparatus for hardening metallic workpieces |
| GB2109519A (en) * | 1981-10-07 | 1983-06-02 | Hitachi Ltd | Thermal treatment apparatus and method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS5636129A (en) * | 1979-08-31 | 1981-04-09 | Hitachi Ltd | Method and device for heat treatment of semiconductor thin plate |
-
1983
- 1983-07-25 JP JP13450883A patent/JPS59208824A/en active Pending
-
1984
- 1984-04-26 GB GB08410684A patent/GB2139744A/en not_active Withdrawn
- 1984-05-03 NL NL8401408A patent/NL8401408A/en not_active Application Discontinuation
- 1984-05-11 FR FR8407288A patent/FR2545985A1/en active Pending
- 1984-05-11 DE DE19843417579 patent/DE3417579A1/en not_active Withdrawn
- 1984-05-11 DE DE19848414476 patent/DE8414476U1/en not_active Expired
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB1153372A (en) * | 1966-06-21 | 1969-05-29 | Associated Semiconductor Mft | Improvements in or relating to Methods of Heat Treating Semiconductor Bodies. |
| GB2091398A (en) * | 1981-01-17 | 1982-07-28 | Kloeckner Ionon | Apparatus for hardening metallic workpieces |
| GB2109519A (en) * | 1981-10-07 | 1983-06-02 | Hitachi Ltd | Thermal treatment apparatus and method |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP0327718A2 (en) * | 1988-02-11 | 1989-08-16 | Heinrich Dr. Söhlbrand | Method and device for the temperature treatment of semiconductor materials |
| EP0327718A3 (en) * | 1988-02-11 | 1989-11-23 | Heinrich Dr. Söhlbrand | Method and device for the temperature treatment of semiconductor materials |
Also Published As
| Publication number | Publication date |
|---|---|
| DE3417579A1 (en) | 1984-11-15 |
| NL8401408A (en) | 1984-12-03 |
| DE8414476U1 (en) | 1984-11-08 |
| GB8410684D0 (en) | 1984-05-31 |
| FR2545985A1 (en) | 1984-11-16 |
| JPS59208824A (en) | 1984-11-27 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WAP | Application withdrawn, taken to be withdrawn or refused ** after publication under section 16(1) |