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GB2114364B - Field effect transistors - Google Patents

Field effect transistors

Info

Publication number
GB2114364B
GB2114364B GB08202466A GB8202466A GB2114364B GB 2114364 B GB2114364 B GB 2114364B GB 08202466 A GB08202466 A GB 08202466A GB 8202466 A GB8202466 A GB 8202466A GB 2114364 B GB2114364 B GB 2114364B
Authority
GB
United Kingdom
Prior art keywords
field effect
effect transistors
transistors
field
effect
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB08202466A
Other versions
GB2114364A (en
Inventor
George Horace Brooke Thompson
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB08202466A priority Critical patent/GB2114364B/en
Publication of GB2114364A publication Critical patent/GB2114364A/en
Application granted granted Critical
Publication of GB2114364B publication Critical patent/GB2114364B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D30/00—Field-effect transistors [FET]
    • H10D30/80—FETs having rectifying junction gate electrodes
    • H10D30/87—FETs having Schottky gate electrodes, e.g. metal-semiconductor FETs [MESFET]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D62/00—Semiconductor bodies, or regions thereof, of devices having potential barriers
    • H10D62/10—Shapes, relative sizes or dispositions of the regions of the semiconductor bodies; Shapes of the semiconductor bodies
    • H10D62/17—Semiconductor regions connected to electrodes not carrying current to be rectified, amplified or switched, e.g. channel regions
    • H10D62/351—Substrate regions of field-effect devices
    • H10D62/357—Substrate regions of field-effect devices of FETs
GB08202466A 1982-01-28 1982-01-28 Field effect transistors Expired GB2114364B (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
GB08202466A GB2114364B (en) 1982-01-28 1982-01-28 Field effect transistors

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB08202466A GB2114364B (en) 1982-01-28 1982-01-28 Field effect transistors

Publications (2)

Publication Number Publication Date
GB2114364A GB2114364A (en) 1983-08-17
GB2114364B true GB2114364B (en) 1985-06-19

Family

ID=10527941

Family Applications (1)

Application Number Title Priority Date Filing Date
GB08202466A Expired GB2114364B (en) 1982-01-28 1982-01-28 Field effect transistors

Country Status (1)

Country Link
GB (1) GB2114364B (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6386555A (en) * 1986-09-30 1988-04-16 Toshiba Corp Semiconductor device

Also Published As

Publication number Publication date
GB2114364A (en) 1983-08-17

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Legal Events

Date Code Title Description
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee