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GB2038085B - Random access memory cell with polysilicon bit line - Google Patents

Random access memory cell with polysilicon bit line

Info

Publication number
GB2038085B
GB2038085B GB7849115A GB7849115A GB2038085B GB 2038085 B GB2038085 B GB 2038085B GB 7849115 A GB7849115 A GB 7849115A GB 7849115 A GB7849115 A GB 7849115A GB 2038085 B GB2038085 B GB 2038085B
Authority
GB
United Kingdom
Prior art keywords
memory cell
random access
bit line
access memory
polysilicon bit
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB7849115A
Other versions
GB2038085A (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
STC PLC
Original Assignee
Standard Telephone and Cables PLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Standard Telephone and Cables PLC filed Critical Standard Telephone and Cables PLC
Priority to GB7849115A priority Critical patent/GB2038085B/en
Priority to DE19792949689 priority patent/DE2949689A1/en
Priority to JP16418679A priority patent/JPS5583259A/en
Publication of GB2038085A publication Critical patent/GB2038085A/en
Application granted granted Critical
Publication of GB2038085B publication Critical patent/GB2038085B/en
Expired legal-status Critical Current

Links

Classifications

    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
    • G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
    • G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
    • G11C11/403—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh
    • G11C11/404—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells with charge regeneration common to a multiplicity of memory cells, i.e. external refresh with one charge-transfer gate, e.g. MOS transistor, per cell
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Semiconductor Memories (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
GB7849115A 1978-12-19 1978-12-19 Random access memory cell with polysilicon bit line Expired GB2038085B (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
GB7849115A GB2038085B (en) 1978-12-19 1978-12-19 Random access memory cell with polysilicon bit line
DE19792949689 DE2949689A1 (en) 1978-12-19 1979-12-11 INTRANSISTOR MEMORY CELL FOR A DYNAMIC SEMICONDUCTOR MEMORY WITH OPTIONAL ACCESS
JP16418679A JPS5583259A (en) 1978-12-19 1979-12-19 Random access memory cell with polycrystalline bit wire

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB7849115A GB2038085B (en) 1978-12-19 1978-12-19 Random access memory cell with polysilicon bit line

Publications (2)

Publication Number Publication Date
GB2038085A GB2038085A (en) 1980-07-16
GB2038085B true GB2038085B (en) 1983-05-25

Family

ID=10501815

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7849115A Expired GB2038085B (en) 1978-12-19 1978-12-19 Random access memory cell with polysilicon bit line

Country Status (3)

Country Link
JP (1) JPS5583259A (en)
DE (1) DE2949689A1 (en)
GB (1) GB2038085B (en)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4364075A (en) * 1980-09-02 1982-12-14 Intel Corporation CMOS Dynamic RAM cell and method of fabrication
US5359216A (en) * 1983-02-23 1994-10-25 Texas Instruments Incorporated DRAM process with improved polysilicon-to-polysilicon capacitor and the capacitor
US5244825A (en) * 1983-02-23 1993-09-14 Texas Instruments Incorporated DRAM process with improved poly-to-poly capacitor
US4922312A (en) * 1986-04-30 1990-05-01 Texas Instruments Incorporated DRAM process with improved polysilicon-to-polysilicon capacitor and the capacitor
US5098192A (en) * 1986-04-30 1992-03-24 Texas Instruments Incorporated DRAM with improved poly-to-poly capacitor
JPH02146767A (en) * 1989-07-19 1990-06-05 Mitsubishi Electric Corp Semiconductor memory device

Also Published As

Publication number Publication date
DE2949689A1 (en) 1980-07-03
GB2038085A (en) 1980-07-16
JPS5583259A (en) 1980-06-23

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee