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GB2011713A - Integrated Darlington circuit - Google Patents

Integrated Darlington circuit

Info

Publication number
GB2011713A
GB2011713A GB7849491A GB7849491A GB2011713A GB 2011713 A GB2011713 A GB 2011713A GB 7849491 A GB7849491 A GB 7849491A GB 7849491 A GB7849491 A GB 7849491A GB 2011713 A GB2011713 A GB 2011713A
Authority
GB
United Kingdom
Prior art keywords
epitaxial
base
emitter
schottky diode
transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7849491A
Other versions
GB2011713B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Koninklijke Philips NV
Original Assignee
Philips Gloeilampenfabrieken NV
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Philips Gloeilampenfabrieken NV filed Critical Philips Gloeilampenfabrieken NV
Publication of GB2011713A publication Critical patent/GB2011713A/en
Application granted granted Critical
Publication of GB2011713B publication Critical patent/GB2011713B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/642—Combinations of non-inverted vertical BJTs of the same conductivity type having different characteristics, e.g. Darlington transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/611—Combinations of BJTs and one or more of diodes, resistors or capacitors
    • H10D84/613—Combinations of vertical BJTs and one or more of diodes, resistors or capacitors
    • H10D84/617—Combinations of vertical BJTs and only diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D88/00—Three-dimensional [3D] integrated devices

Landscapes

  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

An integrated Darlington circuit comprises a Schottky diode (D; 35.33a) disposed in parallel with the emitter- base junction (33b/32a) of a transistor (T1). The emitter (33b, 41) base (32a, 34a, 34b) and collector (31, 30) each comprise an epitaxial portion (33b, 32a, 31) which are formed by three superimposed epitaxial layers (33, 32, 31) of alternating conductivity types (n-p-n). The Schottky diode (D) comprises a metal electrode (35) situated at the surface of the upper epitaxial layer (33) of which another portion (33b) forms the epitaxial portion of the emitter (33b, 41) of the transistor (T1). This Schottky electrode (35) is connected to the transistor emitter (33b, 41) by a metal layer (40). At the surface of the upper epitaxial layer (33) the base contact (39) contacts both the epitaxial portion (33a) of the Schottky diode (D) and a highly-doped base reach-through zone (34) which extends to the base epitaxial portion (32a). The arrangement permits the switching speed of a Darlington amplifier to be improved without requiring additional doping or etching steps to integrate the Schottky diode (D). <IMAGE>
GB7849491A 1977-12-30 1978-12-21 Integrated darlington circuit Expired GB2011713B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
FR7739796A FR2413785A1 (en) 1977-12-30 1977-12-30 MONOLITHIC SEMICONDUCTOR DEVICE WITH MULTILAYER PLANE STRUCTURE, MESA TYPE, INCLUDING AT LEAST ONE TRANSISTOR ASSOCIATED WITH A SCHOTTKY DIODE

Publications (2)

Publication Number Publication Date
GB2011713A true GB2011713A (en) 1979-07-11
GB2011713B GB2011713B (en) 1982-04-28

Family

ID=9199556

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7849491A Expired GB2011713B (en) 1977-12-30 1978-12-21 Integrated darlington circuit

Country Status (5)

Country Link
JP (1) JPS54100673A (en)
CA (1) CA1123922A (en)
DE (1) DE2854995C2 (en)
FR (1) FR2413785A1 (en)
GB (1) GB2011713B (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63308957A (en) * 1987-06-11 1988-12-16 Sanyo Electric Co Ltd Darlington transistor
JP3549479B2 (en) * 2000-10-16 2004-08-04 寛治 大塚 Semiconductor integrated circuit with varactor device

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS5724659B2 (en) * 1974-10-31 1982-05-25
US3913213A (en) * 1974-08-02 1975-10-21 Trw Inc Integrated circuit transistor switch
FR2335957A1 (en) * 1975-12-17 1977-07-15 Radiotechnique Compelec MONOLITHIC SEMICONDUCTOR DEVICE INCLUDING A STRAIGHTENING BRIDGE

Also Published As

Publication number Publication date
DE2854995C2 (en) 1985-06-20
FR2413785A1 (en) 1979-07-27
CA1123922A (en) 1982-05-18
JPS54100673A (en) 1979-08-08
GB2011713B (en) 1982-04-28
JPS6136714B2 (en) 1986-08-20
FR2413785B1 (en) 1982-11-12
DE2854995A1 (en) 1979-07-05

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Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee