[go: up one dir, main page]

GB2005917A - Semiconductor optical devices - Google Patents

Semiconductor optical devices

Info

Publication number
GB2005917A
GB2005917A GB7839538A GB7839538A GB2005917A GB 2005917 A GB2005917 A GB 2005917A GB 7839538 A GB7839538 A GB 7839538A GB 7839538 A GB7839538 A GB 7839538A GB 2005917 A GB2005917 A GB 2005917A
Authority
GB
United Kingdom
Prior art keywords
semiconductor optical
optical devices
coatings
lead silicate
silicate glass
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
GB7839538A
Other versions
GB2005917B (en
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
AT&T Corp
Original Assignee
Western Electric Co Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Western Electric Co Inc filed Critical Western Electric Co Inc
Publication of GB2005917A publication Critical patent/GB2005917A/en
Application granted granted Critical
Publication of GB2005917B publication Critical patent/GB2005917B/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
    • H01B3/02—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances
    • H01B3/08—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of inorganic substances quartz; glass; glass wool; slag wool; vitreous enamels
    • H01B3/087—Chemical composition of glass
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/30—Coatings
    • H10F77/306—Coatings for devices having potential barriers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/84—Coatings, e.g. passivation layers or antireflective coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04042—Bonding areas specifically adapted for wire connectors, e.g. wirebond pads
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/0555—Shape
    • H01L2224/05552—Shape in top view
    • H01L2224/05553—Shape in top view being rectangular
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/484—Connecting portions
    • H01L2224/48463—Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12042—LASER
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/12—Passive devices, e.g. 2 terminal devices
    • H01L2924/1204—Optical Diode
    • H01L2924/12043—Photo diode

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)
  • Light Receiving Elements (AREA)
  • Glass Compositions (AREA)
  • Led Device Packages (AREA)

Abstract

In a semiconductor optical device, lead silicate glass coatings 4 are provided on reflective surfaces of the device to protect the device and to adjust the surface reflectivity. The coatings can be deposited by controlled sputtering from a preformed glass body having properties compatible with those of the device. The device may be a LED, a laser or a light detector comprising GaAs, GaAlAs, GaP, GaAsP, GaInAsP, or GaAsSb. The molar ratio between PbO and SiO2 in the lead silicate glass is between 20:80 and 70:30. <IMAGE>
GB7839538A 1977-10-11 1978-10-06 Semiconductor optical devices Expired GB2005917B (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US84077877A 1977-10-11 1977-10-11

Publications (2)

Publication Number Publication Date
GB2005917A true GB2005917A (en) 1979-04-25
GB2005917B GB2005917B (en) 1982-01-20

Family

ID=25283207

Family Applications (1)

Application Number Title Priority Date Filing Date
GB7839538A Expired GB2005917B (en) 1977-10-11 1978-10-06 Semiconductor optical devices

Country Status (10)

Country Link
JP (1) JPS5464483A (en)
BE (1) BE871127A (en)
CA (1) CA1115401A (en)
CH (1) CH635466A5 (en)
DE (1) DE2843280A1 (en)
FR (1) FR2406309A1 (en)
GB (1) GB2005917B (en)
IT (1) IT1099271B (en)
NL (1) NL7810206A (en)
SE (1) SE7810313L (en)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0090135A1 (en) * 1982-03-29 1983-10-05 International Business Machines Corporation Semiconductor injection lasers
EP0484887A2 (en) * 1990-11-07 1992-05-13 Fuji Electric Co., Ltd. Laser diode device having a protective layer on its light-emitting end face
US5444726A (en) * 1990-11-07 1995-08-22 Fuji Electric Co., Ltd. Semiconductor laser device
US5488623A (en) * 1990-11-07 1996-01-30 Fuji Electric Co., Ltd. Mold-type semiconductor laser device with reduced light-emitting point displacement during operation
EP1892777A2 (en) * 2006-08-24 2008-02-27 Corning Inc. A light emitting device including anti-reflection layer(s)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS60217685A (en) * 1984-04-13 1985-10-31 Hitachi Ltd light emitting element

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR87810E (en) * 1961-09-29 1966-05-20 Ibm Coated articles and method for producing their protective coatings
GB1250099A (en) * 1969-04-14 1971-10-20
US3676756A (en) * 1969-09-18 1972-07-11 Innotech Corp Insulated gate field effect device having glass gate insulator
GB1352959A (en) * 1972-11-09 1974-05-15 Standard Telephones Cables Ltd Passivation of semiconductor devices

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0090135A1 (en) * 1982-03-29 1983-10-05 International Business Machines Corporation Semiconductor injection lasers
US4751708A (en) * 1982-03-29 1988-06-14 International Business Machines Corporation Semiconductor injection lasers
EP0484887A2 (en) * 1990-11-07 1992-05-13 Fuji Electric Co., Ltd. Laser diode device having a protective layer on its light-emitting end face
EP0484887A3 (en) * 1990-11-07 1992-05-27 Fuji Electric Co., Ltd. Laser diode device having a protective layer on its light-emitting end face
US5444726A (en) * 1990-11-07 1995-08-22 Fuji Electric Co., Ltd. Semiconductor laser device
US5488623A (en) * 1990-11-07 1996-01-30 Fuji Electric Co., Ltd. Mold-type semiconductor laser device with reduced light-emitting point displacement during operation
US5590144A (en) * 1990-11-07 1996-12-31 Fuji Electric Co., Ltd. Semiconductor laser device
EP1892777A2 (en) * 2006-08-24 2008-02-27 Corning Inc. A light emitting device including anti-reflection layer(s)
EP1892777A3 (en) * 2006-08-24 2009-11-04 Corning Incorporated A light emitting device including anti-reflection layer(s)

Also Published As

Publication number Publication date
JPS5464483A (en) 1979-05-24
IT1099271B (en) 1985-09-18
GB2005917B (en) 1982-01-20
DE2843280A1 (en) 1979-04-12
SE7810313L (en) 1979-04-12
CA1115401A (en) 1981-12-29
FR2406309B1 (en) 1982-05-14
NL7810206A (en) 1979-04-17
IT7828555A0 (en) 1978-10-09
CH635466A5 (en) 1983-03-31
BE871127A (en) 1979-02-01
FR2406309A1 (en) 1979-05-11

Similar Documents

Publication Publication Date Title
GB1474969A (en) Electroluminescent devices
DE3071320D1 (en) Device for laterally coupling the light in an optical glass fiber wave guide
CA2139086A1 (en) Light-Receiving Structure for Waveguide Type Optical Devices
FI842039A0 (en) FODRAL FOER OPTICAL ELEMENT.
CA2019074A1 (en) Photo-semiconductor module
CA2013849A1 (en) Optical waveguide and method for its manufacture
GB2005917A (en) Semiconductor optical devices
EP0328202A3 (en) Method of forming a quantum dot structure
EP0313381A3 (en) Image sensor
EP0371795A3 (en) Optical coupling circuit element
CA2051473A1 (en) Hollow waveguide for ultraviolet wavelength region laser beams
IT1270920B (en) SEMICONDUCTOR LASER WITH TRANSVERSAL EMISSION, AND ITS COUPLING TO AN OPTICAL GUIDE
FR2351065A1 (en) GLASS FOR THE PASSIVATION OF SEMICONDUCTOR DEVICES
CA1271830C (en) Opto-electronic device with anti-reflection coating
JPS51139787A (en) Semiconductor light emitting device
JPS5538064A (en) Semiconductor light-emitting device and its preparation
JPS6424488A (en) Semiconductor laser device
IT1193534B (en) SEMICONDUCTOR LASER DEVICE, WITH A SINGLE FILAMENT OF LIGHT EQUIPPED WITH A LARGE SENDING AREA
EP0349741A3 (en) Semiconductor device enhanced for optical interaction
GB8712119D0 (en) Device packaging
GB1277979A (en) Reflecting microscope
JPS5588011A (en) End face structure of optical transmission wire
JPS6489544A (en) Cap for photosemiconductor device case
GR3004976T3 (en)
JPS5590825A (en) Reflection reference plate

Legal Events

Date Code Title Description
PCNP Patent ceased through non-payment of renewal fee