GB1556244A - Open tube gallium diffusion process for semiconductor devices - Google Patents

Open tube gallium diffusion process for semiconductor devices

Info

Publication number: GB1556244A
Authority: GB; United Kingdom
Prior art keywords: semiconductor devices; diffusion process; open tube; gallium diffusion; tube gallium
Prior art date: 1975-10-07
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.): Expired

Application number

GB41263/76A

Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)

CBS Corp

Original Assignee

Westinghouse Electric Corp

Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)

1975-10-07

Filing date

1976-10-05

Publication date

1979-11-21

1976-10-05 Application filed by Westinghouse Electric Corp filed Critical Westinghouse Electric Corp

1979-11-21 Publication of GB1556244A publication Critical patent/GB1556244A/en

Status Expired legal-status Critical Current

Classifications

- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
- C30B31/165—Diffusion sources
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused

Landscapes

Chemical & Material Sciences (AREA)
Engineering & Computer Science (AREA)
Crystallography & Structural Chemistry (AREA)
Materials Engineering (AREA)
Metallurgy (AREA)
Organic Chemistry (AREA)
Crystals, And After-Treatments Of Crystals (AREA)

GB41263/76A 1975-10-07 1976-10-05 Open tube gallium diffusion process for semiconductor devices Expired GB1556244A (en)

Applications Claiming Priority (1)

Application Number	Priority Date	Filing Date	Title
US62043975A	1975-10-07	1975-10-07

Publications (1)

Publication Number	Publication Date
GB1556244A true GB1556244A (en)	1979-11-21

Family

ID=24485946

Family Applications (1)

Application Number	Title	Priority Date	Filing Date
GB41263/76A Expired GB1556244A (en)	1975-10-07	1976-10-05	Open tube gallium diffusion process for semiconductor devices

Country Status (6)

Country	Link
JP (1)	JPS5246763A (en)
BE (1)	BE847005A (en)
CA (1)	CA1065498A (en)
DE (1)	DE2644879A1 (en)
FR (1)	FR2326974A1 (en)
GB (1)	GB1556244A (en)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number	Priority date	Publication date	Assignee	Title
DE2751163C3 (en) *	1977-11-16	1982-02-25	Brown, Boveri & Cie Ag, 6800 Mannheim	Method for controlling open gallium diffusion and apparatus for carrying out the same
US4235650A (en) *	1978-09-05	1980-11-25	General Electric Company	Open tube aluminum diffusion
DE3147245C1 (en) *	1981-11-28	1983-03-10	Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt	Diffusion process for producing gallium-doped silicon layers having low surface concentration

1976
- 1976-09-27 CA CA262,073A patent/CA1065498A/en not_active Expired
- 1976-10-05 FR FR7629920A patent/FR2326974A1/en active Granted
- 1976-10-05 GB GB41263/76A patent/GB1556244A/en not_active Expired
- 1976-10-05 DE DE19762644879 patent/DE2644879A1/en active Pending
- 1976-10-06 BE BE171292A patent/BE847005A/en unknown
- 1976-10-07 JP JP51119917A patent/JPS5246763A/en active Granted

Also Published As

Publication number	Publication date
CA1065498A (en)	1979-10-30
FR2326974A1 (en)	1977-05-06
BE847005A (en)	1977-04-06
JPS5246763A (en)	1977-04-13
JPS5344794B2 (en)	1978-12-01
FR2326974B3 (en)	1979-06-15
DE2644879A1 (en)	1977-04-21

Publication	Publication Date	Title
JPS5264872A (en)	1977-05-28	Apparatus for holding semiconductor wafers
JPS5245288A (en)	1977-04-09	Semiconductor device
JPS527678A (en)	1977-01-20	Semiconductor device
JPS56162870A (en)	1981-12-15	Semiconductor device
AU1555876A (en)	1978-01-12	Semiconductor device
GB1548756A (en)	1979-07-18	Semicondutor device
ZA766145B (en)	1978-05-30	Semiconductor devices
GB1558349A (en)	1979-12-28	Making semiconductor device
AU497599B2 (en)	1978-12-21	Semiconductor device manufacture
JPS5279661A (en)	1977-07-04	Semiconductor device
JPS5238861A (en)	1977-03-25	Device used for semiconductor filter
GB1552161A (en)	1979-09-12	Semiconductor devices
JPS5230273A (en)	1977-03-07	Apparatus for forming semiconductor crystals having substantially homogeneous diameter
JPS51124381A (en)	1976-10-29	Method of manufacturing semiconductor device using twoolayer mask
JPS51123083A (en)	1976-10-27	Integrated semiconductor device
JPS5238892A (en)	1977-03-25	Semiconductor device
JPS5234676A (en)	1977-03-16	Semiconductor device
GB1554273A (en)	1979-10-17	Semiconductor device manufacture
GB1557961A (en)	1979-12-19	Semiconductor circuits
JPS5246516A (en)	1977-04-13	Semiconductor hose
JPS52119068A (en)	1977-10-06	Semiconductor device
JPS529380A (en)	1977-01-24	Semiconductor device
JPS5250685A (en)	1977-04-22	Apparatus for dividing wafers
JPS526087A (en)	1977-01-18	Insb semiconductor device
JPS5222878A (en)	1977-02-21	Process for silicon semiconductor devices

Legal Events

Date	Code	Title	Description
1980-05-29	PS	Patent sealed
1993-06-02	PCNP	Patent ceased through non-payment of renewal fee	Effective date: 19921005