BE847005A - PROCESS FOR MANUFACTURING SEMICONDUCTORS BY DIFFUSION OF GALLIUM IN AN OPEN TUBE, - Google Patents
PROCESS FOR MANUFACTURING SEMICONDUCTORS BY DIFFUSION OF GALLIUM IN AN OPEN TUBE,Info
- Publication number
- BE847005A BE847005A BE171292A BE171292A BE847005A BE 847005 A BE847005 A BE 847005A BE 171292 A BE171292 A BE 171292A BE 171292 A BE171292 A BE 171292A BE 847005 A BE847005 A BE 847005A
- Authority
- BE
- Belgium
- Prior art keywords
- gallium
- diffusion
- open tube
- manufacturing semiconductors
- semiconductors
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/16—Feed and outlet means for the gases; Modifying the flow of the gases
- C30B31/165—Diffusion sources
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
- C30B29/02—Elements
- C30B29/06—Silicon
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B31/00—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor
- C30B31/06—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state
- C30B31/08—Diffusion or doping processes for single crystals or homogeneous polycrystalline material with defined structure; Apparatus therefor by contacting with diffusion material in the gaseous state the diffusion materials being a compound of the elements to be diffused
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US62043975A | 1975-10-07 | 1975-10-07 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| BE847005A true BE847005A (en) | 1977-04-06 |
Family
ID=24485946
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| BE171292A BE847005A (en) | 1975-10-07 | 1976-10-06 | PROCESS FOR MANUFACTURING SEMICONDUCTORS BY DIFFUSION OF GALLIUM IN AN OPEN TUBE, |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS5246763A (en) |
| BE (1) | BE847005A (en) |
| CA (1) | CA1065498A (en) |
| DE (1) | DE2644879A1 (en) |
| FR (1) | FR2326974A1 (en) |
| GB (1) | GB1556244A (en) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DE2751163C3 (en) * | 1977-11-16 | 1982-02-25 | Brown, Boveri & Cie Ag, 6800 Mannheim | Method for controlling open gallium diffusion and apparatus for carrying out the same |
| US4235650A (en) * | 1978-09-05 | 1980-11-25 | General Electric Company | Open tube aluminum diffusion |
| DE3147245C1 (en) * | 1981-11-28 | 1983-03-10 | Licentia Patent-Verwaltungs-Gmbh, 6000 Frankfurt | Diffusion process for producing gallium-doped silicon layers having low surface concentration |
-
1976
- 1976-09-27 CA CA262,073A patent/CA1065498A/en not_active Expired
- 1976-10-05 FR FR7629920A patent/FR2326974A1/en active Granted
- 1976-10-05 GB GB41263/76A patent/GB1556244A/en not_active Expired
- 1976-10-05 DE DE19762644879 patent/DE2644879A1/en active Pending
- 1976-10-06 BE BE171292A patent/BE847005A/en unknown
- 1976-10-07 JP JP51119917A patent/JPS5246763A/en active Granted
Also Published As
| Publication number | Publication date |
|---|---|
| CA1065498A (en) | 1979-10-30 |
| FR2326974A1 (en) | 1977-05-06 |
| GB1556244A (en) | 1979-11-21 |
| JPS5246763A (en) | 1977-04-13 |
| JPS5344794B2 (en) | 1978-12-01 |
| FR2326974B3 (en) | 1979-06-15 |
| DE2644879A1 (en) | 1977-04-21 |
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