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GB1544314A - Non-volatile semiconductor memory device - Google Patents

Non-volatile semiconductor memory device

Info

Publication number
GB1544314A
GB1544314A GB5053377A GB5053377A GB1544314A GB 1544314 A GB1544314 A GB 1544314A GB 5053377 A GB5053377 A GB 5053377A GB 5053377 A GB5053377 A GB 5053377A GB 1544314 A GB1544314 A GB 1544314A
Authority
GB
United Kingdom
Prior art keywords
memory device
semiconductor memory
volatile semiconductor
volatile
semiconductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB5053377A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Toshiba Corp
Original Assignee
Tokyo Shibaura Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Shibaura Electric Co Ltd filed Critical Tokyo Shibaura Electric Co Ltd
Publication of GB1544314A publication Critical patent/GB1544314A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C14/00—Digital stores characterised by arrangements of cells having volatile and non-volatile storage properties for back-up when the power is down
GB5053377A 1976-12-09 1977-12-05 Non-volatile semiconductor memory device Expired GB1544314A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP14798276A JPS5372429A (en) 1976-12-09 1976-12-09 Non-volatile semiconductor memory unit

Publications (1)

Publication Number Publication Date
GB1544314A true GB1544314A (en) 1979-04-19

Family

ID=15442485

Family Applications (1)

Application Number Title Priority Date Filing Date
GB5053377A Expired GB1544314A (en) 1976-12-09 1977-12-05 Non-volatile semiconductor memory device

Country Status (3)

Country Link
JP (1) JPS5372429A (en)
DE (1) DE2754987C2 (en)
GB (1) GB1544314A (en)

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0041520A1 (en) * 1979-11-13 1981-12-16 Ncr Co Static volatile/non-volatile ram cell.
GB2171571A (en) * 1985-02-27 1986-08-28 Hughes Microelectronics Ltd Non-volatile memory
US5434811A (en) * 1987-11-19 1995-07-18 National Semiconductor Corporation Non-destructive read ferroelectric based memory circuit
US5536672A (en) * 1987-10-08 1996-07-16 National Semiconductor Corporation Fabrication of ferroelectric capacitor and memory cell
EP1164640A1 (en) * 2000-01-24 2001-12-19 Sony Corporation Semiconductor device and manufacture thereof
US7672151B1 (en) 1987-06-02 2010-03-02 Ramtron International Corporation Method for reading non-volatile ferroelectric capacitor memory cell

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS55111174A (en) * 1979-02-21 1980-08-27 Nec Corp Nonvolatile semiconductor memory device
JPS56500109A (en) * 1979-03-13 1981-02-05
US4873664A (en) * 1987-02-12 1989-10-10 Ramtron Corporation Self restoring ferroelectric memory
US4809225A (en) * 1987-07-02 1989-02-28 Ramtron Corporation Memory cell with volatile and non-volatile portions having ferroelectric capacitors
KR930015015A (en) * 1991-12-20 1993-07-23 윌리엄 이. 힐러 Memory Cells with Ferroelectric Capacitors
US7050323B2 (en) 2002-08-29 2006-05-23 Texas Instruments Incorporated Ferroelectric memory

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3662351A (en) * 1970-03-30 1972-05-09 Ibm Alterable-latent image monolithic memory
JPS5213916B2 (en) * 1972-04-13 1977-04-18
JPS5721796B2 (en) * 1974-01-29 1982-05-10
GB1516134A (en) * 1975-05-20 1978-06-28 Plessey Co Ltd Electrical information store

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0041520A1 (en) * 1979-11-13 1981-12-16 Ncr Co Static volatile/non-volatile ram cell.
EP0041520A4 (en) * 1979-11-13 1984-03-26 Ncr Corp Static volatile/non-volatile ram cell.
GB2171571A (en) * 1985-02-27 1986-08-28 Hughes Microelectronics Ltd Non-volatile memory
US4730274A (en) * 1985-02-27 1988-03-08 Hughes Aircraft Company Non-volatile memory with predictable failure modes and method of data storage and retrieval
GB2171571B (en) * 1985-02-27 1989-06-14 Hughes Microelectronics Ltd Non-volatile memory with predictable failure modes and method of data storage and retrieval
US7672151B1 (en) 1987-06-02 2010-03-02 Ramtron International Corporation Method for reading non-volatile ferroelectric capacitor memory cell
US7924599B1 (en) 1987-06-02 2011-04-12 Ramtron International Corporation Non-volatile memory circuit using ferroelectric capacitor storage element
US8018754B1 (en) 1987-06-02 2011-09-13 National Semiconductor Corporation Non-volatile memory circuit using ferroelectric capacitor storage element
US8023308B1 (en) 1987-06-02 2011-09-20 National Semiconductor Corporation Non-volatile memory circuit using ferroelectric capacitor storage element
US5536672A (en) * 1987-10-08 1996-07-16 National Semiconductor Corporation Fabrication of ferroelectric capacitor and memory cell
US5434811A (en) * 1987-11-19 1995-07-18 National Semiconductor Corporation Non-destructive read ferroelectric based memory circuit
EP1164640A1 (en) * 2000-01-24 2001-12-19 Sony Corporation Semiconductor device and manufacture thereof
EP1164640A4 (en) * 2000-01-24 2007-09-26 Sony Corp SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

Also Published As

Publication number Publication date
DE2754987C2 (en) 1984-11-22
JPS5372429A (en) 1978-06-27
JPS5723354B2 (en) 1982-05-18
DE2754987A1 (en) 1978-06-15

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Legal Events

Date Code Title Description
PS Patent sealed
746 Register noted 'licences of right' (sect. 46/1977)
PCNP Patent ceased through non-payment of renewal fee