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GB1509135A - Gas plasma vapour etching device and method - Google Patents

Gas plasma vapour etching device and method

Info

Publication number
GB1509135A
GB1509135A GB1089976A GB1089976A GB1509135A GB 1509135 A GB1509135 A GB 1509135A GB 1089976 A GB1089976 A GB 1089976A GB 1089976 A GB1089976 A GB 1089976A GB 1509135 A GB1509135 A GB 1509135A
Authority
GB
United Kingdom
Prior art keywords
gas
gas plasma
etching device
article
plasma vapour
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1089976A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Unisys Corp
Original Assignee
Burroughs Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Burroughs Corp filed Critical Burroughs Corp
Publication of GB1509135A publication Critical patent/GB1509135A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67069—Apparatus for fluid treatment for etching for drying etching

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)

Abstract

1509135 Etching BURROUGHS CORP 18 March 1976 [18 April 1975] 10899/76 Heading B6J An anode such as a wafer with a surface of silicon, silicon dioxide or silicon nitride is etched by a gas flame containing fluorine in a quartz tube 11 having an inlet 15 and outlet 13 for the gas and electrodes 19 connected to an RF generator 21, or an inductor coil, to ionize the gas, the article 23 resting in a flatbottomed recess in a substance 25 of fused quartz so that its lower surface is protected from the etchant. The substrate 25 may be formed with a plurality of recesses, each to contain an article.
GB1089976A 1975-04-18 1976-03-18 Gas plasma vapour etching device and method Expired GB1509135A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US56957575A 1975-04-18 1975-04-18

Publications (1)

Publication Number Publication Date
GB1509135A true GB1509135A (en) 1978-04-26

Family

ID=24275994

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1089976A Expired GB1509135A (en) 1975-04-18 1976-03-18 Gas plasma vapour etching device and method

Country Status (2)

Country Link
FR (1) FR2308200A1 (en)
GB (1) GB1509135A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0073643A1 (en) * 1981-08-27 1983-03-09 Mitsubishi Materials Corporation Sputtering apparatus
CN102359676A (en) * 2011-09-26 2012-02-22 常州捷佳创精密机械有限公司 Connecting device for tank-bottom drainage pipeline

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4183780A (en) * 1978-08-21 1980-01-15 International Business Machines Corporation Photon enhanced reactive ion etching
JPS6151633B2 (en) * 1979-08-09 1986-11-10 Ei Teii Ando Teii Tekunorojiizu Inc
US4298443A (en) * 1979-08-09 1981-11-03 Bell Telephone Laboratories, Incorporated High capacity etching apparatus and method

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0073643A1 (en) * 1981-08-27 1983-03-09 Mitsubishi Materials Corporation Sputtering apparatus
CN102359676A (en) * 2011-09-26 2012-02-22 常州捷佳创精密机械有限公司 Connecting device for tank-bottom drainage pipeline
CN102359676B (en) * 2011-09-26 2015-12-09 常州捷佳创精密机械有限公司 A kind of connecting device for tank-bottom drainage pipeline

Also Published As

Publication number Publication date
FR2308200A1 (en) 1976-11-12
FR2308200B1 (en) 1980-10-31

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Legal Events

Date Code Title Description
PS Patent sealed
732 Registration of transactions, instruments or events in the register (sect. 32/1977)
PCNP Patent ceased through non-payment of renewal fee