GB1474924A - High-ohmic resistances - Google Patents
High-ohmic resistancesInfo
- Publication number
- GB1474924A GB1474924A GB4637774A GB4637774A GB1474924A GB 1474924 A GB1474924 A GB 1474924A GB 4637774 A GB4637774 A GB 4637774A GB 4637774 A GB4637774 A GB 4637774A GB 1474924 A GB1474924 A GB 1474924A
- Authority
- GB
- United Kingdom
- Prior art keywords
- channel
- implantation
- layer
- doped
- resistance
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 238000002513 implantation Methods 0.000 abstract 3
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 2
- 229910052796 boron Inorganic materials 0.000 abstract 2
- 150000002500 ions Chemical class 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 239000003795 chemical substances by application Substances 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 abstract 1
- 238000009413 insulation Methods 0.000 abstract 1
- 238000005468 ion implantation Methods 0.000 abstract 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 abstract 1
- 229910052594 sapphire Inorganic materials 0.000 abstract 1
- 239000010980 sapphire Substances 0.000 abstract 1
- 229910052596 spinel Inorganic materials 0.000 abstract 1
- 239000011029 spinel Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
1474924 Semiconductor devices SIEMENS AG 25 Oct 1974 [6 Dec 1973] 46377/74 Heading H1K A high ohmic resistor comprises a resistance channel 6 in a monocrystalline silicon layer 2 on an insulating substrate 1, and is formed by the introduction of acceptor ions and/or donor ions into the layer 2 by two ion implantation steps. The channel 6 may be adjacent the substrate 1, which may be spinel or sapphire, and may be doped by boron implantation, and the portion 9 of the layer 2 above the channel 6 may be doped by phosphorous implantation. In an alternative embodiment, a resistance channel (61), Fig. 3 (not shown) is formed by boron implantation of zones (71, 91) on either side of the channel (61) formed of an n-type semiconductor. A coating 8 of SiO 2 may be provided to serve as the gate insulation of a MOSFET.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE2360962A DE2360962A1 (en) | 1973-12-06 | 1973-12-06 | HIGH RESISTANCE IN A THIN SINGLE CRYSTALLINE SILICONE LAYER |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1474924A true GB1474924A (en) | 1977-05-25 |
Family
ID=5900134
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB4637774A Expired GB1474924A (en) | 1973-12-06 | 1974-10-25 | High-ohmic resistances |
Country Status (11)
| Country | Link |
|---|---|
| JP (1) | JPS5091291A (en) |
| AT (1) | AT342150B (en) |
| BE (1) | BE823055A (en) |
| CA (1) | CA1048660A (en) |
| CH (1) | CH580328A5 (en) |
| DE (1) | DE2360962A1 (en) |
| FR (1) | FR2254095A1 (en) |
| GB (1) | GB1474924A (en) |
| IT (1) | IT1026738B (en) |
| NL (1) | NL7415420A (en) |
| SE (1) | SE396498B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| DD150415A3 (en) * | 1978-01-03 | 1981-09-02 | Guenter Weise | VOLTAGE-RELATED RESISTANCE |
-
1973
- 1973-12-06 DE DE2360962A patent/DE2360962A1/en active Pending
-
1974
- 1974-10-25 GB GB4637774A patent/GB1474924A/en not_active Expired
- 1974-11-14 AT AT912874A patent/AT342150B/en not_active IP Right Cessation
- 1974-11-26 NL NL7415420A patent/NL7415420A/en not_active Application Discontinuation
- 1974-12-03 IT IT30113/74A patent/IT1026738B/en active
- 1974-12-03 CH CH1599574A patent/CH580328A5/xx not_active IP Right Cessation
- 1974-12-05 CA CA74215309A patent/CA1048660A/en not_active Expired
- 1974-12-05 SE SE7415254A patent/SE396498B/en unknown
- 1974-12-05 FR FR7439812A patent/FR2254095A1/fr not_active Withdrawn
- 1974-12-06 JP JP49141093A patent/JPS5091291A/ja active Pending
- 1974-12-06 BE BE151249A patent/BE823055A/en unknown
Also Published As
| Publication number | Publication date |
|---|---|
| SE7415254L (en) | 1975-06-09 |
| CH580328A5 (en) | 1976-09-30 |
| BE823055A (en) | 1975-04-01 |
| JPS5091291A (en) | 1975-07-21 |
| ATA912874A (en) | 1977-07-15 |
| AT342150B (en) | 1978-03-10 |
| IT1026738B (en) | 1978-10-20 |
| SE396498B (en) | 1977-09-19 |
| NL7415420A (en) | 1975-06-10 |
| DE2360962A1 (en) | 1975-06-12 |
| CA1048660A (en) | 1979-02-13 |
| FR2254095A1 (en) | 1975-07-04 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |