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GB1452805A - Field effect transistor - Google Patents

Field effect transistor

Info

Publication number
GB1452805A
GB1452805A GB1376974A GB1376974A GB1452805A GB 1452805 A GB1452805 A GB 1452805A GB 1376974 A GB1376974 A GB 1376974A GB 1376974 A GB1376974 A GB 1376974A GB 1452805 A GB1452805 A GB 1452805A
Authority
GB
United Kingdom
Prior art keywords
layer
thick
channel
source
semi
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB1376974A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
International Business Machines Corp
Original Assignee
International Business Machines Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by International Business Machines Corp filed Critical International Business Machines Corp
Publication of GB1452805A publication Critical patent/GB1452805A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H10D64/681—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered
    • H10D64/685—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator having a compositional variation, e.g. multilayered being perpendicular to the channel plane
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
    • H10D48/30—Devices controlled by electric currents or voltages
    • H10D48/32—Devices controlled by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H10D48/36—Unipolar devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D64/00—Electrodes of devices having potential barriers
    • H10D64/60—Electrodes characterised by their materials
    • H10D64/66—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes
    • H10D64/68—Electrodes having a conductor capacitively coupled to a semiconductor by an insulator, e.g. MIS electrodes characterised by the insulator, e.g. by the gate insulator
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Electrodes Of Semiconductors (AREA)
  • Junction Field-Effect Transistors (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

1452805 Semi-conductor devices INTERNATIONAL BUSINESS MACHINES CORP 28 March 1974 [3 May 1973] 13769/74 Heading H1K An FET includes a body 4 of a monocrystalline semi-conductor having source, drain 10, 11 and channel regions adjacent a surface of the body 4, a thick layer 6, 8 of insulating material over the source and drain regions 10, 11, a thin layer 16, 18 of insulation over the channel region, the thick layer 6, 8 including means for trapping ionic contaminants, and the thin layer including silicon dioxide 18 adjacent the channel and phosphosilicate glass 16 remote from the channel, and a gate electrode 20 completely covering the thin insulating layer 16, 18 and extending over a portion of the thick insulating layer 6, 8 adjacent the thin layer 16, 18. The layer 18 is 500-750 Š thick and the layer 16 90-130 Š thick and has a phosphorus concentration of about 4À5 mole per cent. The layers 6, 8 are also respectively silicon oxide and phosphosilicate glass. The semi-conductor body 4 is silicon in the (100) crystallographic orientation and the source and drain regions 10, 11 and a contact region 12 are formed by diffusion of phosphorus. The device has a quartz coating and the electrode material may be a Cu-Al alloy, polySi doped with P, or Mo.
GB1376974A 1973-05-03 1974-03-28 Field effect transistor Expired GB1452805A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US35704673A 1973-05-03 1973-05-03

Publications (1)

Publication Number Publication Date
GB1452805A true GB1452805A (en) 1976-10-20

Family

ID=23404079

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1376974A Expired GB1452805A (en) 1973-05-03 1974-03-28 Field effect transistor

Country Status (6)

Country Link
JP (1) JPS522272B2 (en)
CA (1) CA1017462A (en)
DE (1) DE2419704A1 (en)
FR (1) FR2228301B1 (en)
GB (1) GB1452805A (en)
IT (1) IT1006474B (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140345939A1 (en) * 2012-03-05 2014-11-27 Murata Manufacturing Co., Ltd. Joining method, method for producing electronic device and electronic part

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI396686B (en) 2004-05-21 2013-05-21 Takeda Pharmaceutical Cyclic guanamine derivatives, as well as their products and usage

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB1053069A (en) * 1963-06-28
US3528168A (en) * 1967-09-26 1970-09-15 Texas Instruments Inc Method of making a semiconductor device
US3632438A (en) * 1967-09-29 1972-01-04 Texas Instruments Inc Method for increasing the stability of semiconductor devices

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140345939A1 (en) * 2012-03-05 2014-11-27 Murata Manufacturing Co., Ltd. Joining method, method for producing electronic device and electronic part
US9409247B2 (en) * 2012-03-05 2016-08-09 Murata Manufacturing Co., Ltd. Joining method, method for producing electronic device and electronic part

Also Published As

Publication number Publication date
CA1017462A (en) 1977-09-13
IT1006474B (en) 1976-09-30
FR2228301A1 (en) 1974-11-29
DE2419704A1 (en) 1974-11-21
JPS522272B2 (en) 1977-01-20
FR2228301B1 (en) 1977-10-14
JPS5011391A (en) 1975-02-05

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee