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GB1392381A - Phototransistor circuit arrangements - Google Patents

Phototransistor circuit arrangements

Info

Publication number
GB1392381A
GB1392381A GB2284572A GB2284572A GB1392381A GB 1392381 A GB1392381 A GB 1392381A GB 2284572 A GB2284572 A GB 2284572A GB 2284572 A GB2284572 A GB 2284572A GB 1392381 A GB1392381 A GB 1392381A
Authority
GB
United Kingdom
Prior art keywords
transistor
collector
circuit arrangements
base
region
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB2284572A
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Siemens Corp
Original Assignee
Siemens Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19712129154 external-priority patent/DE2129154C3/en
Application filed by Siemens Corp filed Critical Siemens Corp
Publication of GB1392381A publication Critical patent/GB1392381A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/51—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used
    • H03K17/78—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled
    • H03K17/795—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors
    • H03K17/7955—Electronic switching or gating, i.e. not by contact-making and –breaking characterised by the components used using opto-electronic devices, i.e. light-emitting and photoelectric devices electrically- or optically-coupled controlling bipolar transistors using phototransistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/641—Combinations of only vertical BJTs
    • H10D84/643—Combinations of non-inverted vertical BJTs and inverted vertical BJTs

Landscapes

  • Amplifiers (AREA)
  • Light Receiving Elements (AREA)

Abstract

1392381 Integrated circuits SIEMENS AG 16 May 1972 [11 June 1971] 22845/72 Heading H1K [Also in Division H3] In Fig. 4 a photo-transistor having an emitter 16, a base 15 and a collector 14 is connected in series with a load transistor comprising an emitter 14, a base 15 and a collector 22 by sharing the common region 14. Likewise in Fig. 5 a common region 14 serves as and interconnects the base region of a lateral transistor 30, 24, 31 and the collector region of a transistor 24, 25, 26.
GB2284572A 1971-06-11 1972-05-16 Phototransistor circuit arrangements Expired GB1392381A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
DE19712129154 DE2129154C3 (en) 1971-06-11 Circuit arrangement for operating phototransistors

Publications (1)

Publication Number Publication Date
GB1392381A true GB1392381A (en) 1975-04-30

Family

ID=5810560

Family Applications (1)

Application Number Title Priority Date Filing Date
GB2284572A Expired GB1392381A (en) 1971-06-11 1972-05-16 Phototransistor circuit arrangements

Country Status (4)

Country Link
FR (1) FR2140555B1 (en)
GB (1) GB1392381A (en)
IT (1) IT956376B (en)
NL (1) NL7204262A (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
AU2049588A (en) * 1987-08-07 1989-02-09 Logitech Sa Photosource/photodetector circuit

Also Published As

Publication number Publication date
DE2129154A1 (en) 1973-02-01
NL7204262A (en) 1972-12-13
DE2129154B2 (en) 1973-05-30
FR2140555B1 (en) 1977-12-23
FR2140555A1 (en) 1973-01-19
IT956376B (en) 1973-10-10

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee