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GB1231806A - - Google Patents

Info

Publication number
GB1231806A
GB1231806A GB4776467A GB1231806DA GB1231806A GB 1231806 A GB1231806 A GB 1231806A GB 4776467 A GB4776467 A GB 4776467A GB 1231806D A GB1231806D A GB 1231806DA GB 1231806 A GB1231806 A GB 1231806A
Authority
GB
United Kingdom
Prior art keywords
emitter
transistor
collector
oct
substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
GB4776467A
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Publication of GB1231806A publication Critical patent/GB1231806A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D84/00—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers
    • H10D84/60—Integrated devices formed in or on semiconductor substrates that comprise only semiconducting layers, e.g. on Si wafers or on GaAs-on-Si wafers characterised by the integration of at least one component covered by groups H10D10/00 or H10D18/00, e.g. integration of BJTs
    • H10D84/63—Combinations of vertical and lateral BJTs
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Bipolar Transistors (AREA)

Abstract

1,231,806. Integrated circuit transistor. JOSEPH LUCAS (INDUSTRIES) Ltd. 3 Oct., 1968 [20 Oct., 1967], No. 47764/67. Heading H1K. The collector resistance of an integrated circuit bipolar transistor constituted by nested zones 12, 13, 14 in a substrate 11 of opposite conductivity type to the 'collector zone 12 is reduced by providing a short-circuiting connection 16 between the emitter 16 and the substrate and making a collector connection via a zone 15 of opposite conductivity type forming the emitter of a parasitic transistor 15, 12, 11 which is effectively in emitter-follower relationship to the main transistor.
GB4776467A 1967-10-20 1967-10-20 Expired GB1231806A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB4776467 1967-10-20

Publications (1)

Publication Number Publication Date
GB1231806A true GB1231806A (en) 1971-05-12

Family

ID=10446171

Family Applications (1)

Application Number Title Priority Date Filing Date
GB4776467A Expired GB1231806A (en) 1967-10-20 1967-10-20

Country Status (1)

Country Link
GB (1) GB1231806A (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2233712A1 (en) * 1973-06-13 1975-01-10 Sony Corp
US4122482A (en) * 1973-02-02 1978-10-24 U.S. Philips Corporation Vertical complementary bipolar transistor device with epitaxial base zones

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4122482A (en) * 1973-02-02 1978-10-24 U.S. Philips Corporation Vertical complementary bipolar transistor device with epitaxial base zones
FR2233712A1 (en) * 1973-06-13 1975-01-10 Sony Corp

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Legal Events

Date Code Title Description
PS Patent sealed [section 19, patents act 1949]
PCNP Patent ceased through non-payment of renewal fee