GB1351454A - Light sensitive devices using semiconductor materials - Google Patents
Light sensitive devices using semiconductor materialsInfo
- Publication number
- GB1351454A GB1351454A GB584670A GB1351454DA GB1351454A GB 1351454 A GB1351454 A GB 1351454A GB 584670 A GB584670 A GB 584670A GB 1351454D A GB1351454D A GB 1351454DA GB 1351454 A GB1351454 A GB 1351454A
- Authority
- GB
- United Kingdom
- Prior art keywords
- layer
- regions
- gold
- cells
- sulphide
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 4
- 239000000463 material Substances 0.000 title abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 4
- 229910052737 gold Inorganic materials 0.000 abstract 4
- 239000010931 gold Substances 0.000 abstract 4
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 abstract 2
- 230000004888 barrier function Effects 0.000 abstract 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 2
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 2
- 229910052804 chromium Inorganic materials 0.000 abstract 2
- 239000011651 chromium Substances 0.000 abstract 2
- 229910052751 metal Inorganic materials 0.000 abstract 2
- 239000002184 metal Substances 0.000 abstract 2
- 239000000758 substrate Substances 0.000 abstract 2
- PFNQVRZLDWYSCW-UHFFFAOYSA-N (fluoren-9-ylideneamino) n-naphthalen-1-ylcarbamate Chemical compound C12=CC=CC=C2C2=CC=CC=C2C1=NOC(=O)NC1=CC=CC2=CC=CC=C12 PFNQVRZLDWYSCW-UHFFFAOYSA-N 0.000 abstract 1
- MARUHZGHZWCEQU-UHFFFAOYSA-N 5-phenyl-2h-tetrazole Chemical compound C1=CC=CC=C1C1=NNN=N1 MARUHZGHZWCEQU-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910021591 Copper(I) chloride Inorganic materials 0.000 abstract 1
- 229910018487 Ni—Cr Inorganic materials 0.000 abstract 1
- 239000004642 Polyimide Substances 0.000 abstract 1
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 abstract 1
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- UHYPYGJEEGLRJD-UHFFFAOYSA-N cadmium(2+);selenium(2-) Chemical compound [Se-2].[Cd+2] UHYPYGJEEGLRJD-UHFFFAOYSA-N 0.000 abstract 1
- VNNRSPGTAMTISX-UHFFFAOYSA-N chromium nickel Chemical compound [Cr].[Ni] VNNRSPGTAMTISX-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- BWFPGXWASODCHM-UHFFFAOYSA-N copper monosulfide Chemical compound [Cu]=S BWFPGXWASODCHM-UHFFFAOYSA-N 0.000 abstract 1
- OXBLHERUFWYNTN-UHFFFAOYSA-M copper(I) chloride Chemical compound [Cu]Cl OXBLHERUFWYNTN-UHFFFAOYSA-M 0.000 abstract 1
- 229940045803 cuprous chloride Drugs 0.000 abstract 1
- 150000002500 ions Chemical class 0.000 abstract 1
- 229920001721 polyimide Polymers 0.000 abstract 1
- 239000011701 zinc Substances 0.000 abstract 1
- 229910052725 zinc Inorganic materials 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F10/00—Individual photovoltaic cells, e.g. solar cells
- H10F10/10—Individual photovoltaic cells, e.g. solar cells having potential barriers
- H10F10/16—Photovoltaic cells having only PN heterojunction potential barriers
- H10F10/169—Photovoltaic cells having only PN heterojunction potential barriers comprising Cu2X/CdX heterojunctions, wherein X is a Group VI element, e.g. Cu2O/CdO PN heterojunction photovoltaic cells
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F19/00—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules
- H10F19/30—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells
- H10F19/31—Integrated devices, or assemblies of multiple devices, comprising at least one photovoltaic cell covered by group H10F10/00, e.g. photovoltaic modules comprising thin-film photovoltaic cells having multiple laterally adjacent thin-film photovoltaic cells deposited on the same substrate
- H10F19/35—Structures for the connecting of adjacent photovoltaic cells, e.g. interconnections or insulating spacers
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
- H10F77/00—Constructional details of devices covered by this subclass
- H10F77/10—Semiconductor bodies
- H10F77/16—Material structures, e.g. crystalline structures, film structures or crystal plane orientations
- H10F77/169—Thin semiconductor films on metallic or insulating substrates
- H10F77/1696—Thin semiconductor films on metallic or insulating substrates the films including Group II-VI materials, e.g. CdTe or CdS
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
1351454 Semi-conductor devices INTERNATIONAL RESEARCH & DEVELOPMENT CO Ltd 19 April 1971 [6 Feb 1970] 5846/70 Heading HlK An array of light sensitive cells is formed from a continuous semi-conductor layer of one conductivity type by dividing it into individual cells by regions of the opposite conductivity type, these regions serving to interconnect the cells. Rectangular metal electrodes 2 may be formed on an insulating substrate 1, and a semiconductor layer 3 formed thereon. The layer may be of cadmium sulphide, cadmium telluride, cadmium selenide or zinc selenide. Parts of the surface of the layer 3 are masked, and regions 4 converted to the opposite conductivity type, these regions overlying edge portions 'a' of the electrodes 2. Photovoltaic barrier layers 5 may be formed in the layer 3, and interconnecting metal strips 6 formed on layers 5 and regions 4 to reduce series resistance losses therebetween. In operation region 4 connects the electrode of one cell with the barrier layer of the adjoining cell. The cells may be solar cells, and the electrodes 2 of gold, chromium, gold on chromium, gold on nickel-chromium, aluminium or zinc. The substrate may be of a polyimide material, and strips 6 of gold or copper. Using a cadmium sulphide layer 3, the region 4 may be converted to copper sulphide by immersing in a solution containing cuprous ions. Similarly layers 5 may be formed by reacting the layer 3 with cuprous chloride to form cuprous sulphide.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| GB584670 | 1970-02-06 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1351454A true GB1351454A (en) | 1974-05-01 |
Family
ID=9803729
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB584670A Expired GB1351454A (en) | 1970-02-06 | 1970-02-06 | Light sensitive devices using semiconductor materials |
Country Status (1)
| Country | Link |
|---|---|
| GB (1) | GB1351454A (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4144096A (en) * | 1976-12-27 | 1979-03-13 | Kabushiki Kaisha Suwa Seikosha | Solar battery and method of manufacture |
| FR2410881A1 (en) * | 1977-11-30 | 1979-06-29 | Photon Power Inc | METHODS FOR IMPROVING THE OPEN CIRCUIT VOLTAGE OF A SOLAR BATTERY |
| US4191794A (en) * | 1978-05-11 | 1980-03-04 | Westinghouse Electric Corp. | Integrated solar cell array |
| DE3031907A1 (en) * | 1979-08-23 | 1981-03-12 | Unisearch Ltd., Kensington, Neusüdwales | SOLAR CELL AND SOLAR CELL COMPOSITION AND METHOD FOR THEIR PRODUCTION. |
| FR2487581A1 (en) * | 1980-07-25 | 1982-01-29 | Eastman Kodak Co | ASSEMBLY OF PHOTOVOLTAIC CELLS AND METHOD OF MANUFACTURING SUCH ASSEMBLY |
| US4443651A (en) * | 1981-03-31 | 1984-04-17 | Rca Corporation | Series connected solar cells on a single substrate |
| US5017243A (en) * | 1989-01-06 | 1991-05-21 | Mitsubishi Denki Kabushiki Kaisha | Solar cell and a production method therefor |
-
1970
- 1970-02-06 GB GB584670A patent/GB1351454A/en not_active Expired
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4144096A (en) * | 1976-12-27 | 1979-03-13 | Kabushiki Kaisha Suwa Seikosha | Solar battery and method of manufacture |
| FR2410881A1 (en) * | 1977-11-30 | 1979-06-29 | Photon Power Inc | METHODS FOR IMPROVING THE OPEN CIRCUIT VOLTAGE OF A SOLAR BATTERY |
| US4191794A (en) * | 1978-05-11 | 1980-03-04 | Westinghouse Electric Corp. | Integrated solar cell array |
| DE3031907A1 (en) * | 1979-08-23 | 1981-03-12 | Unisearch Ltd., Kensington, Neusüdwales | SOLAR CELL AND SOLAR CELL COMPOSITION AND METHOD FOR THEIR PRODUCTION. |
| FR2487581A1 (en) * | 1980-07-25 | 1982-01-29 | Eastman Kodak Co | ASSEMBLY OF PHOTOVOLTAIC CELLS AND METHOD OF MANUFACTURING SUCH ASSEMBLY |
| US4315096A (en) * | 1980-07-25 | 1982-02-09 | Eastman Kodak Company | Integrated array of photovoltaic cells having minimized shorting losses |
| US4443651A (en) * | 1981-03-31 | 1984-04-17 | Rca Corporation | Series connected solar cells on a single substrate |
| US5017243A (en) * | 1989-01-06 | 1991-05-21 | Mitsubishi Denki Kabushiki Kaisha | Solar cell and a production method therefor |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| 732 | Registration of transactions, instruments or events in the register (sect. 32/1977) | ||
| PCNP | Patent ceased through non-payment of renewal fee |