[go: up one dir, main page]

GB1319559A - Epitaxial composite and method of making - Google Patents

Epitaxial composite and method of making

Info

Publication number
GB1319559A
GB1319559A GB1319559DA GB1319559A GB 1319559 A GB1319559 A GB 1319559A GB 1319559D A GB1319559D A GB 1319559DA GB 1319559 A GB1319559 A GB 1319559A
Authority
GB
United Kingdom
Prior art keywords
film
iii
substrate
epitaxial
alkyls
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired
Application number
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Boeing North American Inc
Original Assignee
North American Rockwell Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by North American Rockwell Corp filed Critical North American Rockwell Corp
Publication of GB1319559A publication Critical patent/GB1319559A/en
Expired legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/0242—Crystalline insulating materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02546—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02609—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

1319559 Epitaxial III-V film NORTH AMERICAN ROCKWELL CORP 4 June 1970 7565/73 Divided out of 1319311 Heading C1A An epitaxial film of a III-V compound on a monocrystalline apirel (MgAl 2 O 4 ) substrate whose surface orientation is (110), may be produced by introducing one or more gaseous Group V hydrides or alkyls and one or more gaseous Group III alkyls into a reactor containing the heated substrate. The orientation of the film is (100). Binary and mixed compounds are exemplified. The reactants may be Me 3 Ga, Et 3 Ga, Me 3 Al, Et 3 Al, Me 3 In, Et 3 In, PH 3 , Me 3 P, AsH 3 , Me 3 As, SbH 3 , Me 3 Sb, and maybe introduced under reduced pressure in a carrier gas, e.g. H 2 , He, Ar, N 2 , with the Group V compound in excess. Small amounts of e.g. AsCl 3 and/or HCl may be present. The substrate may be placed on a SiC-coated C pedestal heated by RF induction to 650-800‹C. The film may be doped during formation by introducing e.g. H 2 Se or H 2 S (n-type), Me 2 Zn, Et 2 Zn or Me 2 Cd (p-type). Multilayers of different Group III-V compounds may be formed.
GB1319559D 1970-06-04 1970-06-04 Epitaxial composite and method of making Expired GB1319559A (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
GB756573 1970-06-04

Publications (1)

Publication Number Publication Date
GB1319559A true GB1319559A (en) 1973-06-06

Family

ID=9835566

Family Applications (1)

Application Number Title Priority Date Filing Date
GB1319559D Expired GB1319559A (en) 1970-06-04 1970-06-04 Epitaxial composite and method of making

Country Status (1)

Country Link
GB (1) GB1319559A (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4214926A (en) * 1976-07-02 1980-07-29 Tdk Electronics Co., Ltd. Method of doping IIb or VIb group elements into a boron phosphide semiconductor
US4220488A (en) * 1978-03-07 1980-09-02 Thomson-Csf Gas-phase process for the production of an epitaxial layer of indum phosphide
US5064684A (en) * 1989-08-02 1991-11-12 Eastman Kodak Company Waveguides, interferometers, and methods of their formation

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4214926A (en) * 1976-07-02 1980-07-29 Tdk Electronics Co., Ltd. Method of doping IIb or VIb group elements into a boron phosphide semiconductor
US4220488A (en) * 1978-03-07 1980-09-02 Thomson-Csf Gas-phase process for the production of an epitaxial layer of indum phosphide
US5064684A (en) * 1989-08-02 1991-11-12 Eastman Kodak Company Waveguides, interferometers, and methods of their formation

Similar Documents

Publication Publication Date Title
GB1319311A (en) Epitaxial composite and method of making
GB1536586A (en) Method of manufacturing single crystals of gallium nitride by growth from the vapour phase
GB1490665A (en) Method of growing epitaxial layers of silicon
GB1319560A (en) Epitaxial composite and method of making
GB1176691A (en) High Resistivity Compounds and Alloys and Methods of Making Same.
GB1478453A (en) Photocathodes
GB1319559A (en) Epitaxial composite and method of making
GB1328170A (en) Epitaxial deposition
JPS559467A (en) Epitaxial wafer
GB1206468A (en) Method of manufacturing silicon nitride powder
GB1259897A (en) Method for growing epitaxial films
GB1342542A (en) Epitaxial deposition
GB1494254A (en) Liquid phase epitaxial growth
GB1449789A (en) Method of growing pyrolytic silicon dioxide layers
GB1425102A (en) Methods of etching gallium arsenide substrates and epitaxially depositing gallium arsenide thereon
GB1002528A (en) Manufacture of semiconductive bodies
GB1427590A (en) Gallium phosphide semiconductor devices
GB1353954A (en) Methods of producing gallium phosphide light emitting diodes
GB1322347A (en) Methods of depositing semiconductor material
GB1149215A (en) Improvements in or relating to the manufacture of epitaxially grown layers of semiconductor compounds
KR790000518B1 (en) Method of producing gallium phosphide redlight emission diode
JPS52116072A (en) Process for doping nitrogen to gallium phosphide
GB1037765A (en) Artificial textile fibres and their production
GB1533400A (en) Electroluminescent diode manufacture
GB1470171A (en) Method of producing silicon nitride

Legal Events

Date Code Title Description
PS Patent sealed
PE20 Patent expired after termination of 20 years