GB1287110A - Semiconductor devices - Google Patents
Semiconductor devicesInfo
- Publication number
- GB1287110A GB1287110A GB61515/69A GB6151569A GB1287110A GB 1287110 A GB1287110 A GB 1287110A GB 61515/69 A GB61515/69 A GB 61515/69A GB 6151569 A GB6151569 A GB 6151569A GB 1287110 A GB1287110 A GB 1287110A
- Authority
- GB
- United Kingdom
- Prior art keywords
- plate
- metal layer
- dielectric
- capacitor
- dec
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 title abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 5
- 239000002184 metal Substances 0.000 abstract 5
- 239000003990 capacitor Substances 0.000 abstract 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- 239000004411 aluminium Substances 0.000 abstract 1
- 229910052782 aluminium Inorganic materials 0.000 abstract 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 abstract 1
- 230000003647 oxidation Effects 0.000 abstract 1
- 238000007254 oxidation reaction Methods 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- 229910052715 tantalum Inorganic materials 0.000 abstract 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D1/00—Resistors, capacitors or inductors
- H10D1/60—Capacitors
- H10D1/62—Capacitors having potential barriers
- H10D1/66—Conductor-insulator-semiconductor capacitors, e.g. MOS capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/29—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the material, e.g. carbon
- H01L23/291—Oxides or nitrides or carbides, e.g. ceramics, glass
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
1287110 Semi-conductor devices PHILIPS ELECTRONIC & ASSOCIATED INDUSTRIES Ltd 17 Dec 1969 [20 Dec 1968] 61515/69 Heading H1K An integrated circuit comprises a wafershaped semi-conductor body with circuit elements adjoining one surface thereof, and capacitor on the other surface of the body, one plate of the capacitor being formed either by the surface portion of the body, or a metal layer on the surface, a dielectric layer being provided on the plate, and a metal layer, forming the second plate, on the dielectric layer, the voltage supply to the circuit being connected to the capacitor plates. In the embodiment in which the first plate comprises a metal layer, the dielectric may be formed from the oxide of the metal layer by anodic oxidation. The metal may be of aluminium or tantalum, and the dielectric in the other embodiment be of silicon dioxide.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681816023 DE1816023A1 (en) | 1968-12-20 | 1968-12-20 | Module with electronic circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1287110A true GB1287110A (en) | 1972-08-31 |
Family
ID=5716910
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB61515/69A Expired GB1287110A (en) | 1968-12-20 | 1969-12-17 | Semiconductor devices |
Country Status (6)
| Country | Link |
|---|---|
| JP (1) | JPS49393B1 (en) |
| CA (1) | CA938030A (en) |
| DE (1) | DE1816023A1 (en) |
| FR (1) | FR2026673A1 (en) |
| GB (1) | GB1287110A (en) |
| NL (1) | NL6918811A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2258943A (en) * | 1991-08-19 | 1993-02-24 | Samsung Electronics Co Ltd | Noise suppression in integrated circuit device |
| WO1997012398A1 (en) * | 1995-09-29 | 1997-04-03 | Analog Devices, Inc. | Integrated circuit and supply decoupling capacitor therefor |
| CN101506965B (en) * | 2006-09-21 | 2012-05-09 | 松下电器产业株式会社 | Semiconductor chip, semiconductor mounting module, mobile device communication equipment, manufacturing method of semiconductor chip |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62171286U (en) * | 1986-04-21 | 1987-10-30 | ||
| JPH01146354A (en) * | 1987-12-02 | 1989-06-08 | Mitsubishi Electric Corp | Semiconductor memory device |
| KR102470653B1 (en) | 2020-09-28 | 2022-11-24 | 고려대학교 산학협력단 | Fluorescent protein sensor capable of quantitatively measuring the degree of oxidation of methionine residues of specific proteins and use thereof |
-
1968
- 1968-12-20 DE DE19681816023 patent/DE1816023A1/en active Pending
-
1969
- 1969-12-16 NL NL6918811A patent/NL6918811A/xx unknown
- 1969-12-17 JP JP44101002A patent/JPS49393B1/ja active Pending
- 1969-12-17 GB GB61515/69A patent/GB1287110A/en not_active Expired
- 1969-12-18 FR FR6943883A patent/FR2026673A1/fr not_active Withdrawn
- 1969-12-18 CA CA070244A patent/CA938030A/en not_active Expired
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2258943A (en) * | 1991-08-19 | 1993-02-24 | Samsung Electronics Co Ltd | Noise suppression in integrated circuit device |
| WO1997012398A1 (en) * | 1995-09-29 | 1997-04-03 | Analog Devices, Inc. | Integrated circuit and supply decoupling capacitor therefor |
| US5895966A (en) * | 1995-09-29 | 1999-04-20 | Analog Devices, Inc. | Integrated circuit and supply decoupling capacitor therefor |
| CN101506965B (en) * | 2006-09-21 | 2012-05-09 | 松下电器产业株式会社 | Semiconductor chip, semiconductor mounting module, mobile device communication equipment, manufacturing method of semiconductor chip |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1816023A1 (en) | 1970-06-25 |
| FR2026673A1 (en) | 1970-09-18 |
| CA938030A (en) | 1973-12-04 |
| NL6918811A (en) | 1970-06-23 |
| JPS49393B1 (en) | 1974-01-07 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |