GB1260233A - Improvements in or relating to the epitaxial deposition of crystalline material from the gas phase - Google Patents
Improvements in or relating to the epitaxial deposition of crystalline material from the gas phaseInfo
- Publication number
- GB1260233A GB1260233A GB2816169A GB2816169A GB1260233A GB 1260233 A GB1260233 A GB 1260233A GB 2816169 A GB2816169 A GB 2816169A GB 2816169 A GB2816169 A GB 2816169A GB 1260233 A GB1260233 A GB 1260233A
- Authority
- GB
- United Kingdom
- Prior art keywords
- crystalline material
- gas
- deposition
- epitaxial deposition
- zone
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 230000008021 deposition Effects 0.000 title abstract 5
- 239000002178 crystalline material Substances 0.000 title abstract 3
- 239000007789 gas Substances 0.000 abstract 3
- 239000000758 substrate Substances 0.000 abstract 3
- 239000012495 reaction gas Substances 0.000 abstract 2
- 239000004065 semiconductor Substances 0.000 abstract 2
- 229910018072 Al 2 O 3 Inorganic materials 0.000 abstract 1
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 abstract 1
- 229910004298 SiO 2 Inorganic materials 0.000 abstract 1
- 239000011248 coating agent Substances 0.000 abstract 1
- 238000000576 coating method Methods 0.000 abstract 1
- 238000005530 etching Methods 0.000 abstract 1
- 150000004820 halides Chemical class 0.000 abstract 1
- 238000010438 heat treatment Methods 0.000 abstract 1
- 239000001257 hydrogen Substances 0.000 abstract 1
- 229910052739 hydrogen Inorganic materials 0.000 abstract 1
- 238000000034 method Methods 0.000 abstract 1
- 239000000203 mixture Substances 0.000 abstract 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/54—Apparatus specially adapted for continuous coating
Landscapes
- Chemical & Material Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
1,260,233. Epitaxial deposition. SIEMENS A.G. June 4, 1969 [June 5, 1968], No.28161/69. Heading C7F. In a process for the epitaxial deposition of a crystalline material (e.g. a semi-conductor such as Si or Ge) from a reaction gas (such as a hydrogen/halide mixture) on to a substrate (particularly a semi-conductor such as Si) the substrate body 14 is conveyed on a transport device 10 into a high temperature zone I of a reaction vessel in which deposition of the crystalline material takes place and is then conveyed on said transport device 10 out of said vessel. Reaction gas is fed in at 3, and exists depleted at 4, and etching gas, e.g. HCl may be fed in at 16 to etch the substrates in zone II prior to coating. Gas blankets provided by passage of high-pressure or velocity gas from inlets 5, 5<SP>1</SP> to outlets 6, 6<SP>1</SP>, isolate the deposition zone from the atmosphere. Heating is provided by furnace 2 and the transporter means are trucks 10 moving on tracks, the trucks being made of, or coated with, SiO 2 , SiC, Si 3 N 4 or Al 2 O 3 .
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE19681769520 DE1769520A1 (en) | 1968-06-05 | 1968-06-05 | Process for the epitaxial deposition of crystalline material from the gas phase, in particular for semiconductor purposes |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1260233A true GB1260233A (en) | 1972-01-12 |
Family
ID=5700164
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB2816169A Expired GB1260233A (en) | 1968-06-05 | 1969-06-04 | Improvements in or relating to the epitaxial deposition of crystalline material from the gas phase |
Country Status (8)
| Country | Link |
|---|---|
| JP (1) | JPS5149191B1 (en) |
| AT (1) | AT288811B (en) |
| CH (1) | CH521163A (en) |
| DE (1) | DE1769520A1 (en) |
| FR (1) | FR1597032A (en) |
| GB (1) | GB1260233A (en) |
| NL (1) | NL6906275A (en) |
| SE (1) | SE356905B (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2162367A (en) * | 1984-07-23 | 1986-01-29 | Int Standard Electric Corp | System for producing semiconductor layer structures by way of epitaxial growth |
| GB2164357A (en) * | 1984-09-13 | 1986-03-19 | Toshiba Ceramics Co | Susceptor for supporting a silicon wafer |
| GB2196650A (en) * | 1986-10-27 | 1988-05-05 | Prutec Ltd | Cadmium sulphide solar cells |
| GB2326649A (en) * | 1997-06-27 | 1998-12-30 | Samsung Electronics Co Ltd | Manufacturing silica film in a continuous process |
Families Citing this family (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4096821A (en) * | 1976-12-13 | 1978-06-27 | Westinghouse Electric Corp. | System for fabricating thin-film electronic components |
| DE2722545C2 (en) * | 1977-05-18 | 1984-03-08 | Kurt Dr.-Ing. 7802 Merzhausen Heber | Diffusion furnace for the treatment of semiconductor substrates |
| DE2800574A1 (en) * | 1978-01-07 | 1979-07-12 | Stanley Electric Co Ltd | Ear examination instrument with needle like probe - has battery housed in with socket to receive plug for electrode |
| DE2830589C2 (en) * | 1978-07-12 | 1985-04-18 | Ibm Deutschland Gmbh, 7000 Stuttgart | Continuous furnace for processing semiconductor wafers |
| DE2849240C2 (en) * | 1978-11-13 | 1983-01-13 | Siemens Ag, 1000 Berlin Und 8000 Muenchen | CVD coating device for small parts and their use |
| FR2498813A1 (en) * | 1981-01-27 | 1982-07-30 | Instruments Sa | EQUIPMENT TREATMENT FACILITY FOR SEMICONDUCTOR PRODUCTION |
| DE3907610A1 (en) * | 1989-03-09 | 1990-09-13 | Telefunken Electronic Gmbh | Epitaxial process |
| JP5698059B2 (en) * | 2011-04-08 | 2015-04-08 | 株式会社日立国際電気 | Substrate processing apparatus and solar cell manufacturing method |
-
1968
- 1968-06-05 DE DE19681769520 patent/DE1769520A1/en active Pending
- 1968-12-23 FR FR1597032D patent/FR1597032A/fr not_active Expired
-
1969
- 1969-04-23 NL NL6906275A patent/NL6906275A/xx unknown
- 1969-06-03 AT AT527669A patent/AT288811B/en not_active IP Right Cessation
- 1969-06-03 CH CH839069A patent/CH521163A/en not_active IP Right Cessation
- 1969-06-04 GB GB2816169A patent/GB1260233A/en not_active Expired
- 1969-06-05 SE SE800469A patent/SE356905B/xx unknown
- 1969-06-05 JP JP44043687A patent/JPS5149191B1/ja active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB2162367A (en) * | 1984-07-23 | 1986-01-29 | Int Standard Electric Corp | System for producing semiconductor layer structures by way of epitaxial growth |
| AU582767B2 (en) * | 1984-07-23 | 1989-04-13 | Alcatel N.V. | A vapour deposition process |
| US4934315A (en) * | 1984-07-23 | 1990-06-19 | Alcatel N.V. | System for producing semicondutor layer structures by way of epitaxial growth |
| GB2164357A (en) * | 1984-09-13 | 1986-03-19 | Toshiba Ceramics Co | Susceptor for supporting a silicon wafer |
| GB2196650A (en) * | 1986-10-27 | 1988-05-05 | Prutec Ltd | Cadmium sulphide solar cells |
| GB2326649A (en) * | 1997-06-27 | 1998-12-30 | Samsung Electronics Co Ltd | Manufacturing silica film in a continuous process |
| GB2326649B (en) * | 1997-06-27 | 1999-09-01 | Samsung Electronics Co Ltd | Apparatus for manufacturing silica film and method for manufacturing silica film using the same |
| US6280525B1 (en) | 1997-06-27 | 2001-08-28 | Samsung Electronics Co., Ltd. | Apparatus for manufacturing silica film |
Also Published As
| Publication number | Publication date |
|---|---|
| DE1769520A1 (en) | 1972-03-02 |
| AT288811B (en) | 1971-03-25 |
| FR1597032A (en) | 1970-06-22 |
| JPS5149191B1 (en) | 1976-12-24 |
| NL6906275A (en) | 1969-12-09 |
| CH521163A (en) | 1972-04-15 |
| SE356905B (en) | 1973-06-12 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed | ||
| PLNP | Patent lapsed through nonpayment of renewal fees |