GB1188916A - Mechano-Electrical Transducer - Google Patents
Mechano-Electrical TransducerInfo
- Publication number
- GB1188916A GB1188916A GB51609/68A GB5160968A GB1188916A GB 1188916 A GB1188916 A GB 1188916A GB 51609/68 A GB51609/68 A GB 51609/68A GB 5160968 A GB5160968 A GB 5160968A GB 1188916 A GB1188916 A GB 1188916A
- Authority
- GB
- United Kingdom
- Prior art keywords
- semi
- conductor
- contact
- rectifying
- transducer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired
Links
- 239000004065 semiconductor Substances 0.000 abstract 5
- 239000012535 impurity Substances 0.000 abstract 3
- 229910052751 metal Inorganic materials 0.000 abstract 3
- 239000002184 metal Substances 0.000 abstract 3
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 abstract 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 abstract 2
- 229910052737 gold Inorganic materials 0.000 abstract 2
- 239000010931 gold Substances 0.000 abstract 2
- 239000007787 solid Substances 0.000 abstract 2
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 abstract 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 abstract 1
- 229910005540 GaP Inorganic materials 0.000 abstract 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 abstract 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 abstract 1
- 229910000673 Indium arsenide Inorganic materials 0.000 abstract 1
- PWHULOQIROXLJO-UHFFFAOYSA-N Manganese Chemical compound [Mn] PWHULOQIROXLJO-UHFFFAOYSA-N 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- CJOBVZJTOIVNNF-UHFFFAOYSA-N cadmium sulfide Chemical compound [Cd]=S CJOBVZJTOIVNNF-UHFFFAOYSA-N 0.000 abstract 1
- 229910052980 cadmium sulfide Inorganic materials 0.000 abstract 1
- 229910017052 cobalt Inorganic materials 0.000 abstract 1
- 239000010941 cobalt Substances 0.000 abstract 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 abstract 1
- 229910052802 copper Inorganic materials 0.000 abstract 1
- 239000010949 copper Substances 0.000 abstract 1
- 229910052733 gallium Inorganic materials 0.000 abstract 1
- HZXMRANICFIONG-UHFFFAOYSA-N gallium phosphide Chemical compound [Ga]#P HZXMRANICFIONG-UHFFFAOYSA-N 0.000 abstract 1
- 229910052732 germanium Inorganic materials 0.000 abstract 1
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 abstract 1
- WPYVAWXEWQSOGY-UHFFFAOYSA-N indium antimonide Chemical compound [Sb]#[In] WPYVAWXEWQSOGY-UHFFFAOYSA-N 0.000 abstract 1
- RPQDHPTXJYYUPQ-UHFFFAOYSA-N indium arsenide Chemical compound [In]#[As] RPQDHPTXJYYUPQ-UHFFFAOYSA-N 0.000 abstract 1
- 229910052742 iron Inorganic materials 0.000 abstract 1
- 229910052748 manganese Inorganic materials 0.000 abstract 1
- 239000011572 manganese Substances 0.000 abstract 1
- 229910052759 nickel Inorganic materials 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract 1
- 229910010271 silicon carbide Inorganic materials 0.000 abstract 1
- 229910052709 silver Inorganic materials 0.000 abstract 1
- 239000004332 silver Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D99/00—Subject matter not provided for in other groups of this subclass
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B28—WORKING CEMENT, CLAY, OR STONE
- B28B—SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS; SHAPING SLAG; SHAPING MIXTURES CONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER
- B28B13/00—Feeding the unshaped material to moulds or apparatus for producing shaped articles; Discharging shaped articles from such moulds or apparatus
- B28B13/04—Discharging the shaped articles
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01L—MEASURING FORCE, STRESS, TORQUE, WORK, MECHANICAL POWER, MECHANICAL EFFICIENCY, OR FLUID PRESSURE
- G01L1/00—Measuring force or stress, in general
- G01L1/18—Measuring force or stress, in general using properties of piezo-resistive materials, i.e. materials of which the ohmic resistance varies according to changes in magnitude or direction of force applied to the material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
- H10D48/00—Individual devices not covered by groups H10D1/00 - H10D44/00
- H10D48/50—Devices controlled by mechanical forces, e.g. pressure
Landscapes
- Engineering & Computer Science (AREA)
- Ceramic Engineering (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Semiconductor Integrated Circuits (AREA)
- Measuring Fluid Pressure (AREA)
Abstract
1,188,916. Semi-conductor devices. MATSUSHITA ELECTRIC INDUSTRIAL CO. Ltd. 31 Oct., 1968 [17 Nov., 1967], No. 51609/68. Heading H1K. A mechano-electrical transducer device comprises a semi-conductor transducer element body 1, doped with an impurity giving a deep energy level therein and having a metal rectifying contact and a metal ohmic contact, mounted in a casing 3, 4 containing a further solid state element 2 forming part of the transducer circuit. The electrical resistance between the two contacts of the semi-conductor transducer element body 1 varies according to the stress imparted to the rectifying metal contact, and the further solid state element which may be a transistor, controlled rectifier or integrated circuit acts as an amplifier or a switch. In a further embodiment the semi-conductor transducer element body has two differently doped regions, one adjacent the rectifying contact having a higher concentration of the impurity giving deep energy levels than the other adjacent the ohmic contact. The semi-conductor body may be of silicon, germanium, gallium arsenide, gallium phosphide, indium arsenide, indium antimonide, silicon carbide or cadmium sulphide, and the impurity producing the deep energy level may be gold, copper, nickel, cobalt, iron or manganese. The ohmic contact is of gold or gallium and the rectifying contact is of silver.
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP7486067 | 1967-11-17 |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| GB1188916A true GB1188916A (en) | 1970-04-22 |
Family
ID=13559482
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| GB51609/68A Expired GB1188916A (en) | 1967-11-17 | 1968-10-31 | Mechano-Electrical Transducer |
Country Status (5)
| Country | Link |
|---|---|
| CA (1) | CA919307A (en) |
| DE (1) | DE1807872A1 (en) |
| FR (1) | FR1592268A (en) |
| GB (1) | GB1188916A (en) |
| NL (1) | NL6816275A (en) |
-
1968
- 1968-10-31 GB GB51609/68A patent/GB1188916A/en not_active Expired
- 1968-11-05 CA CA034414A patent/CA919307A/en not_active Expired
- 1968-11-08 DE DE19681807872 patent/DE1807872A1/en active Pending
- 1968-11-15 FR FR1592268D patent/FR1592268A/fr not_active Expired
- 1968-11-15 NL NL6816275A patent/NL6816275A/xx unknown
Also Published As
| Publication number | Publication date |
|---|---|
| NL6816275A (en) | 1969-05-20 |
| CA919307A (en) | 1973-01-16 |
| FR1592268A (en) | 1970-05-11 |
| DE1807872A1 (en) | 1970-01-15 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PS | Patent sealed [section 19, patents act 1949] | ||
| PCNP | Patent ceased through non-payment of renewal fee |